STW21NM50N

STW21NM50N
Mfr. #:
STW21NM50N
Produttore:
STMicroelectronics
Descrizione:
MOSFET N-CH 500V 18A TO-247
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STW21NM50N Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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HTML Datasheet:
STW21NM50N DatasheetSTW21NM50N Datasheet (P4-P6)STW21NM50N Datasheet (P7-P9)STW21NM50N Datasheet (P10-P12)STW21NM50N Datasheet (P13-P15)STW21NM50N Datasheet (P16-P18)
ECAD Model:
Maggiori informazioni:
STW21NM50N maggiori informazioni STW21NM50N Product Details
Attributo del prodotto
Valore attributo
Produttore
ST
categoria di prodotto
FET - Single
Tags
STW21NM, STW21, STW2, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Power MOSFET Transistors N-Ch 500 V 0.15 Ohm 18 A 2nd Gen MDmesh
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 18A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ment14 APAC
MOSFET, N, 500V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:550V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:18A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:66.6nC; No. of Transistors:1; On State resistance @ Vgs = 10V:190mohm; Package / Case:TO-247; Power Dissipation Pd:140W; Pulse Current Idm:72A; Rate of Voltage Change dv / dt:15V/ns; Termination Type:Through Hole; Transistor Type:; Voltage Vds:500V; Voltage Vds Typ:500V; Voltage Vgs Max:25V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:2V
Parte # Mfg. Descrizione Azione Prezzo
STW21NM50N
DISTI # 497-4806-5-ND
STMicroelectronicsMOSFET N-CH 500V 18A TO-247
RoHS: Compliant
Min Qty: 600
Container: Tube
Limited Supply - Call
    STW21NM50N
    DISTI # 511-STW21NM50N
    STMicroelectronicsMOSFET N-Ch 500 V 0.15 Ohm 18 A 2nd Gen MDmesh
    RoHS: Compliant
    0
      STW21NM50NSTMicroelectronics 68
      • 10:$2.1480
      • 3:$2.8640
      • 1:$4.2960
      STW21NM50NST Microwave CorporationPower Field-Effect Transistor, 18A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant
      Europe - 271
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        Nuovo e originale
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        Nuovo e originale
        Disponibilità
        Azione:
        Available
        Su ordine:
        3000
        Inserisci la quantità:
        Il prezzo attuale di STW21NM50N è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        3,22 USD
        3,22 USD
        10
        3,06 USD
        30,61 USD
        100
        2,90 USD
        289,98 USD
        500
        2,74 USD
        1 369,35 USD
        1000
        2,58 USD
        2 577,60 USD
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