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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI3447BDV-T1-GE3 DISTI # SI3447BDV-T1-GE3-ND | Vishay Siliconix | MOSFET P-CH 12V 4.5A 6-TSOP Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI3447BDV-T1-GE3 DISTI # 26R1868 | Vishay Intertechnologies | P CHANNEL MOSFET, -12V, 4.5A,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:1V,No. of Pins:6PinsRoHS Compliant: Yes RoHS: Compliant | 0 | |
| SI3447BDV-T1-GE3 DISTI # 1871348 | Vishay Intertechnologies | P CHANNEL MOSFET, -12V, 4.5A RoHS: Compliant | 0 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI3447BDV-T1-GE3 OMO.#: OMO-SI3447BDV-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3 |
|
Mfr.#: SI3447BDV-T1-E3 OMO.#: OMO-SI3447BDV-T1-E3-VISHAY |
IGBT Transistors MOSFET 12V 5.2A 2W |
|
Mfr.#: SI3447BDV OMO.#: OMO-SI3447BDV-1190 |
Nuovo e originale |
|
|
Mfr.#: SI3447BDV-T1 OMO.#: OMO-SI3447BDV-T1-1190 |
Nuovo e originale |
|
|
Mfr.#: SI3447BDV-T1-GE3 OMO.#: OMO-SI3447BDV-T1-GE3-VISHAY |
MOSFET P-CH 12V 4.5A 6-TSOP |