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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| FMV16N50E DISTI # FE0000000001081 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N50ES-S25PPSC-P DISTI # FE0000000004759 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N50E-P DISTI # FE0000000004756 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N50E-S25PP-P DISTI # FE0000000004757 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N50ES DISTI # FE0000000001082 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N50ESSC-P DISTI # FE0000000004760 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV16N50EHF-S25PP-P DISTI # FE0000000004758 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: FMV11N60EHF OMO.#: OMO-FMV11N60EHF-1190 |
Nuovo e originale |
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Mfr.#: FMV11N60EHF-S25PP OMO.#: OMO-FMV11N60EHF-S25PP-1190 |
Nuovo e originale |
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Mfr.#: FMV11N60ES-S25PP OMO.#: OMO-FMV11N60ES-S25PP-1190 |
Nuovo e originale |
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Mfr.#: FMV11N90E OMO.#: OMO-FMV11N90E-1190 |
IC, MOSFET, N-Channel, FAP-E3 Planar, 900V, 11A, 120W, TO-220F(SLS) |
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Mfr.#: FMV12N50E,12N50E OMO.#: OMO-FMV12N50E-12N50E-1190 |
Nuovo e originale |
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Mfr.#: FMV13N60E,13N60E OMO.#: OMO-FMV13N60E-13N60E-1190 |
Nuovo e originale |
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Mfr.#: FMV13N60ES OMO.#: OMO-FMV13N60ES-1190 |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMV14N25G OMO.#: OMO-FMV14N25G-1190 |
Nuovo e originale |
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Mfr.#: FMV16N50ES TK15A50D OMO.#: OMO-FMV16N50ES-TK15A50D-1190 |
Nuovo e originale |
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Mfr.#: FMV16N60E OMO.#: OMO-FMV16N60E-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |