IRFR812PBF

IRFR812PBF
Mfr. #:
IRFR812PBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 500V 3.6A DPAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFR812PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFR812PBF DatasheetIRFR812PBF Datasheet (P4-P6)IRFR812PBF Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IR
categoria di prodotto
FET - Single
Confezione
Tubo
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
78 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Id-Continuo-Scarico-Corrente
3.6 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Resistenza
1.85 Ohms
Polarità del transistor
Canale N
Qg-Gate-Carica
20 nC
Tags
IRFR81, IRFR8, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
*** Source Electronics
Trans MOSFET N-CH 500V 3.6A 3-Pin(2+Tab) DPAK Tube / MOSFET N-CH 500V 3.6A DPAK
***ineon SCT
500V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***nell
MOSFET, N-CH, 500V, 3.5A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.85ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Parte # Mfg. Descrizione Azione Prezzo
IRFR812PBF
DISTI # IRFR812PBF-ND
Infineon Technologies AGMOSFET N-CH 500V 3.6A DPAK
RoHS: Compliant
Min Qty: 375
Container: Tube
Limited Supply - Call
    IRFR812PBF
    DISTI # 942-IRFR812PBF
    Infineon Technologies AGMOSFET 500V 3.6A 1.85 Ohm 75ns HEXFET ZeroSMPS
    RoHS: Compliant
    0
      IRFR812PBFInternational Rectifier 75
        IRFR812PBF
        DISTI # 2114666
        Infineon Technologies AGMOSFET, N-CH, 500V, 3.5A, D-PAK
        RoHS: Compliant
        0
        • 1:$2.0900
        • 10:$1.7900
        • 100:$1.3800
        • 500:$1.2100
        • 1000:$0.9570
        • 2500:$0.8740
        Immagine Parte # Descrizione
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        IRFR812TRPBF

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        IRFR825PBF

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        IRFR812TRPBF

        Mfr.#: IRFR812TRPBF

        OMO.#: OMO-IRFR812TRPBF-INFINEON-TECHNOLOGIES

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        IRFR825TRPBF

        Mfr.#: IRFR825TRPBF

        OMO.#: OMO-IRFR825TRPBF-INFINEON-TECHNOLOGIES

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        IRFR812

        Mfr.#: IRFR812

        OMO.#: OMO-IRFR812-1190

        MOSFET, N-CH, 500V, 3.5A, D-PAK
        IRFR812PBF

        Mfr.#: IRFR812PBF

        OMO.#: OMO-IRFR812PBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 500V 3.6A DPAK
        IRFR825PBF

        Mfr.#: IRFR825PBF

        OMO.#: OMO-IRFR825PBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 500V 6A DPAK
        IRFR8314TRPBF

        Mfr.#: IRFR8314TRPBF

        OMO.#: OMO-IRFR8314TRPBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 30V 179A D2PAK
        Disponibilità
        Azione:
        Available
        Su ordine:
        3500
        Inserisci la quantità:
        Il prezzo attuale di IRFR812PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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