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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI6475DQ-T1-E3 DISTI # 65K1943 | Vishay Intertechnologies | MOSFET, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:-7.8A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-450mV,No. of Pins:8PinsRoHS Compliant: Yes | 0 | |
| SI6475DQ-T1 DISTI # 781-SI6475DQ | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3 RoHS: Not compliant | 0 |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: SI6475DQ-T1-GE3 OMO.#: OMO-SI6475DQ-T1-GE3 |
MOSFET 12V 10A 1.75W 11mohm @ 4.5V |
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Mfr.#: SI6475DQ-T1-GE3 OMO.#: OMO-SI6475DQ-T1-GE3-317 |
RF Bipolar Transistors MOSFET 12V 10A 1.75W 11mohm @ 4.5V |
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Mfr.#: SI6475DQ OMO.#: OMO-SI6475DQ-1190 |
Nuovo e originale |
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Mfr.#: SI6475DQ-T1-E3 OMO.#: OMO-SI6475DQ-T1-E3-1190 |
MOSFET, FULL REEL, Transistor Polarity:N and P Channel, Continuous Drain Current Id:-7.8A, Drain Source Voltage Vds:-12V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshol |