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IRG4BC30KDPBF

IRG4BC30KDPBF
Mfr. #:
IRG4BC30KDPBF
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors 600V UltraFast 8-25kHz
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRG4BC30KDPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC30KDPBF DatasheetIRG4BC30KDPBF Datasheet (P4-P6)IRG4BC30KDPBF Datasheet (P7-P9)IRG4BC30KDPBF Datasheet (P10)
ECAD Model:
Maggiori informazioni:
IRG4BC30KDPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
2.21 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
28 A
Pd - Dissipazione di potenza:
100 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
28 A
Altezza:
8.77 mm
Lunghezza:
10.54 mm
Larghezza:
4.69 mm
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1000
sottocategoria:
IGBT
Parte # Alias:
SP001532644
Unità di peso:
0.211644 oz
Tags
IRG4BC30KDP, IRG4BC30KD, IRG4BC30K, IRG4BC3, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***essParts.Net
INTERNATIONAL RECTIFIER IRG4BC30KDPBF / IGBT W/DIODE 600V 28A TO220AB
***ied Electronics & Automation
IRG4BC30KDPBF, IGBT Transistor, 28 A 600 V, 3-Pin TO-220AB
***ure Electronics
IRG4BC30 Series 600 V 16 A N-Channel Ultra Fast IGBT - TO-220AB
***ernational Rectifier
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.7 V Current release time: 160 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 28A, TO-220; Transistor Type:IGBT; DC Collector Current:28A; Collector Emitter Voltage Vces:2.21V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:28A; Current Temperature:25°C; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:58A; Rise Time:42ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRG4BC30KDPBF
DISTI # V36:1790_13892392		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube1456
  • 2000:$1.6040
  • 1000:$1.6980
  • 500:$1.8870
  • 250:$2.0960
  • 100:$2.3290
  • 10:$2.6320
  • 1:$3.3209
IRG4BC30KDPBF
DISTI # V99:2348_13892392		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube349
  • 1000:$1.7290
  • 500:$1.8870
  • 250:$2.0960
  • 100:$2.3290
  • 10:$2.6320
  • 1:$3.3209
IRG4BC30KDPBF
DISTI # IRG4BC30KDPBF-ND		Infineon Technologies AGIGBT 600V 28A 100W TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
  • 1000:$1.9522
IRG4BC30KDPBF
DISTI # 30701753		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube2667
  • 7:$1.4776
IRG4BC30KDPBF
DISTI # 26194547		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube1456
  • 2000:$1.7243
  • 1000:$1.8254
  • 500:$2.0285
  • 250:$2.2543
  • 100:$2.5048
  • 10:$2.8294
  • 4:$3.2465
IRG4BC30KDPBF
DISTI # 26198378		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB Tube349
  • 1000:$1.8587
  • 500:$2.0285
  • 250:$2.2543
  • 100:$2.5048
  • 10:$2.8294
  • 4:$3.2465
IRG4BC30KDPBF
DISTI # SP001532644		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB (Alt: SP001532644)
RoHS: Compliant
Min Qty: 1		Europe - 1450
  • 1000:€1.2900
  • 500:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 25:€1.5900
  • 10:€1.6900
  • 1:€1.7900
IRG4BC30KDPBF
DISTI # IRG4BC30KDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRG4BC30KDPBF)
RoHS: Compliant
Min Qty: 220
Container: Bulk		Americas - 0
  • 1100:$1.3900
  • 2200:$1.3900
  • 440:$1.4900
  • 660:$1.4900
  • 220:$1.5900
IRG4BC30KDPBF
DISTI # IRG4BC30KDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRG4BC30KDPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
IRG4BC30KDPBF
DISTI # 63J7487		Infineon Technologies AGTrans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7487)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
    IRG4BC30KDPBF
    DISTI # 63J7487    		Infineon Technologies AGSINGLE IGBT, 600V, 28A,DC Collector Current:28A,Collector Emitter Saturation Voltage Vce(on):2.88V,Power Dissipation Pd:100W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes10
    • 1:$0.3910
    • 10:$0.3910
    • 25:$0.3910
    • 50:$0.3910
    • 100:$0.3910
    • 250:$0.3910
    • 500:$0.3910
    IRG4BC30KDPBF
    DISTI # 70017507    		Infineon Technologies AG600V ULTRAFAST 8-25 KHZ COPACK IGBT IN A TO-220AB PACKAGE
    RoHS: Compliant    		92
    • 1:$4.9300
    • 10:$4.3500
    • 100:$3.7900
    • 500:$3.2900
    • 1000:$2.9000
    IRG4BC30KDPBF
    DISTI # 942-IRG4BC30KDPBF    		Infineon Technologies AGIGBT Transistors 600V UltraFast 8-25kHz
    RoHS: Compliant    		439
    • 1:$3.5100
    • 10:$2.9800
    • 100:$2.5900
    • 250:$2.4500
    • 500:$2.2000
    • 1000:$1.8600
    • 2000:$1.7600
    IRG4BC30KDPBFInternational RectifierInsulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		2175
    • 1000:$1.5000
    • 500:$1.5800
    • 100:$1.6400
    • 25:$1.7100
    • 1:$1.8500
    IRG4BC30KDPBF
    DISTI # 5430153P    		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 28A TO220AB, TU651
    • 500:£1.5500
    • 250:£1.7300
    • 100:£1.8100
    • 25:£1.8500
    IRG4BC30KDPBF
    DISTI # 5430153    		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 28A TO220AB, EA209
    • 500:£1.5500
    • 250:£1.7300
    • 100:£1.8100
    • 25:£1.8500
    • 1:£3.1100
    IRG4BC30KDPBF
    DISTI # IRG4BC30KDPBF    		Infineon Technologies AGTransistor: IGBT,600V,28A,100W,TO220AB71
    • 1:$2.6600
    • 3:$2.3600
    • 10:$2.1200
    • 50:$1.9700
    IRG4BC30KDPBF
    DISTI # 8650390    		Infineon Technologies AGIGBT, 600V, 28A, TO-220
    RoHS: Compliant    		684
    • 500:$3.3900
    • 250:$3.7700
    • 100:$3.9800
    • 10:$4.5800
    • 1:$5.4000
    IRG4BC30KDPBF
    DISTI # 8650390    		Infineon Technologies AGIGBT, 600V, 28A, TO-220675
    • 500:£1.7400
    • 250:£1.9500
    • 100:£2.0500
    • 10:£2.3700
    • 1:£3.1300
    IRG4BC30KDPBF
    DISTI # XSKDRABV0021546    		Infineon Technologies AGPower Field-Effect Transistor,120AI(D),75V,0.0041ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-263AB
    RoHS: Compliant    		1000 in Stock0 on Order
    • 1000:$2.6400
    • 300:$2.8320
    IRG4BC30KDPBF
    DISTI # IRG4BC30KDPBF    		Infineon Technologies AG600V 28A 100W TO220AB
    RoHS: Compliant    		250
    • 10:€1.7800
    • 50:€1.4800
    • 100:€1.3800
    • 200:€1.3300
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    Disponibilità
    Azione:
    421
    Su ordine:
    2404
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    Prezzo di riferimento (USD)
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    Prezzo unitario
    est. Prezzo
    1
    3,51 USD
    3,51 USD
    10
    2,98 USD
    29,80 USD
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    2,59 USD
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    2,45 USD
    612,50 USD
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    2,20 USD
    1 100,00 USD
    1000
    1,86 USD
    1 860,00 USD
    2000
    1,76 USD
    3 520,00 USD
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    1,70 USD
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