SPP20N60C3XKSA1

SPP20N60C3XKSA1
Mfr. #:
SPP20N60C3XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 600V 20.7A TO-220
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SPP20N60C3XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
SPP20N60
Confezione
Tubo
Alias ​​parziali
SP000681058 SPP20N60C3 SPP20N60C3XK
Unità di peso
0.211644 oz
Stile di montaggio
Foro passante
Nome depositato
CoolMOS
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
208 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
4.5 ns
Ora di alzarsi
5 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
20.7 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3 V
Rds-On-Drain-Source-Resistenza
190 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
67 ns
Tempo di ritardo all'accensione tipico
10 ns
Qg-Gate-Carica
87 nC
Transconduttanza diretta-Min
17.5 S
Tags
SPP20N60C3, SPP20N60C, SPP20N60, SPP20N6, SPP20N, SPP20, SPP2, SPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 190 mOhm 114 nC CoolMOS™ Power Mosfet - TO-220-3
***p One Stop Global
Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Parte # Mfg. Descrizione Azione Prezzo
SPP20N60C3XKSA1
DISTI # SPP20N60C3XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 20.7A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1000:$2.7381
  • 500:$3.2466
  • 100:$4.0094
  • 50:$4.4006
  • 1:$5.4800
SPP20N60C3XK
DISTI # SPP20N60C3XKSA1
Infineon Technologies AGTrans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP20N60C3XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$2.4900
  • 502:$2.3900
  • 1002:$2.2900
  • 2500:$2.2900
  • 5000:$2.1900
SPP20N60C3XKSA1
DISTI # 95W8643
Infineon Technologies AGMOSFET, N-CH, 600V, 20.7A, 208W, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:20.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$4.7100
  • 10:$4.0000
  • 25:$3.8200
  • 50:$3.6500
  • 100:$3.4700
  • 250:$3.2900
  • 500:$2.9600
SPP20N60C3XKSA1
DISTI # 726-SPP20N60C3XKSA1
Infineon Technologies AGMOSFET N-Ch 650V 20.7A TO220-3
RoHS: Compliant
0
  • 1:$4.7100
  • 10:$4.0000
  • 100:$3.4700
  • 250:$3.2900
  • 500:$2.9600
SPP20N60C3XKSA1
DISTI # 2325467
Infineon Technologies AGMOSFET, N-CH, 650V, 20.7A, TO-220
RoHS: Compliant
0
  • 1:$5.3800
  • 5:$5.0300
  • 20:$4.4500
  • 50:$4.2000
  • 100:$3.9900
SPP20N60C3XKSA1
DISTI # 2325467
Infineon Technologies AGMOSFET, N-CH, 650V, 20.7A, TO-220
RoHS: Compliant
0
  • 1:£3.5300
  • 10:£2.3100
  • 100:£2.2800
  • 250:£2.2500
  • 500:£2.2200
Immagine Parte # Descrizione
SPP20N60C3XKSA1

Mfr.#: SPP20N60C3XKSA1

OMO.#: OMO-SPP20N60C3XKSA1

MOSFET N-Ch 650V 20.7A TO220-3
SPP20N60S5HKSA1

Mfr.#: SPP20N60S5HKSA1

OMO.#: OMO-SPP20N60S5HKSA1

MOSFET N-Ch 600V 20A TO220-3
SPP20N60CFDHKSA1

Mfr.#: SPP20N60CFDHKSA1

OMO.#: OMO-SPP20N60CFDHKSA1

MOSFET Order Manufacturer Part Number SPP20N60CFD
SPP20N60S5HKSA1

Mfr.#: SPP20N60S5HKSA1

OMO.#: OMO-SPP20N60S5HKSA1-INFINEON-TECHNOLOGIES

MOSFET N-Ch 600V 20A TO220-3
SPP20N60CFDXKSA1

Mfr.#: SPP20N60CFDXKSA1

OMO.#: OMO-SPP20N60CFDXKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 20.7A TO-220
SPP20N60C3.

Mfr.#: SPP20N60C3.

OMO.#: OMO-SPP20N60C3--1190

Nuovo e originale
SPP20N60CFD   STP23NM60N

Mfr.#: SPP20N60CFD STP23NM60N

OMO.#: OMO-SPP20N60CFD-STP23NM60N-1190

Nuovo e originale
SPP20N60S5XKSA1

Mfr.#: SPP20N60S5XKSA1

OMO.#: OMO-SPP20N60S5XKSA1-INFINEON-TECHNOLOGIES

HIGH POWER_LEGACY
SPP20N60SJ

Mfr.#: SPP20N60SJ

OMO.#: OMO-SPP20N60SJ-1190

Nuovo e originale
SPP20N6C3

Mfr.#: SPP20N6C3

OMO.#: OMO-SPP20N6C3-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di SPP20N60C3XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
3,73 USD
3,73 USD
10
3,55 USD
35,47 USD
100
3,36 USD
336,04 USD
500
3,17 USD
1 586,85 USD
1000
2,99 USD
2 987,00 USD
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