IXYT30N65C3H1HV

IXYT30N65C3H1HV
Mfr. #:
IXYT30N65C3H1HV
Produttore:
Littelfuse
Descrizione:
IGBT Transistors 650V/60A XPT Copacked TO-268HV
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXYT30N65C3H1HV Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXYT30N65C3H1HV maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
IGBT - Singolo
Serie
GenX3, XPT
Confezione
Tubo
Stile di montaggio
Foro passante
Nome depositato
XPT
Pacchetto-Custodia
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Tipo di ingresso
Standard
Tipo di montaggio
Montaggio superficiale
Pacchetto-dispositivo-fornitore
TO-268
Configurazione
Separare
Potenza-Max
270W
Reverse-Tempo di ripristino-trr
120ns
Corrente-Collettore-Ic-Max
60A
Tensione-Collettore-Emettitore-Ripartizione-Max
650V
Tipo IGBT
PT
Corrente-Collettore-Impulsato-Icm
118A
Vce-su-Max-Vge-Ic
2.7V @ 15V, 30A
Energia di commutazione
1mJ (on), 270μJ (off)
Gate-Charge
44nC
Td-on-off-25°C
21ns/75ns
Condizione di test
400V, 30A, 10 Ohm, 15V
Pd-Power-Dissipazione
270 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Collettore-Emettitore-Tensione-VCEO-Max
650 V
Collettore-Emettitore-Saturazione-Tensione
2.35 V
Continuo-Collettore-Corrente-a-25-C
60 A
Gate-Emettitore-Corrente di dispersione
100 nA
Massima-tensione-gate-emettitore
30 V
Continuo-Collettore-Corrente-Ic-Max
60 A
Tags
IXYT, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 650V 60A 270W TO268HV
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IXYT30N65C3H1HV
DISTI # IXYT30N65C3H1HV-ND
IXYS CorporationIGBT 650V 60A 270W TO268HV
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$6.0917
IXYT30N65C3H1HV
DISTI # 747-IXYT30N65C3H1HV
IXYS CorporationIGBT Transistors 650V/60A XPT Copacked TO-268HV
RoHS: Compliant
9
  • 1:$7.4300
  • 10:$6.6900
  • 25:$6.0900
  • 50:$5.5700
  • 100:$5.5000
  • 250:$5.0100
  • 500:$4.6100
  • 1000:$4.0100
Immagine Parte # Descrizione
IXYT30N65C3H1HV

Mfr.#: IXYT30N65C3H1HV

OMO.#: OMO-IXYT30N65C3H1HV

IGBT Transistors 650V/60A XPT Copacked TO-268HV
IXYT30N450HV

Mfr.#: IXYT30N450HV

OMO.#: OMO-IXYT30N450HV

IGBT Transistors DISC IGBT XPT-HI VOLTAGE
IXYT30N450HV

Mfr.#: IXYT30N450HV

OMO.#: OMO-IXYT30N450HV-IXYS-CORPORATION

High Voltage XPTTMIGBT
IXYT30N65C3H1HV

Mfr.#: IXYT30N65C3H1HV

OMO.#: OMO-IXYT30N65C3H1HV-IXYS-CORPORATION

IGBT Transistors 650V/60A XPT Copacked TO-268HV
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di IXYT30N65C3H1HV è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
6,02 USD
6,02 USD
10
5,71 USD
57,14 USD
100
5,41 USD
541,35 USD
500
5,11 USD
2 556,40 USD
1000
4,81 USD
4 812,00 USD
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