IXTH14N100

IXTH14N100
Mfr. #:
IXTH14N100
Produttore:
IXYS
Descrizione:
MOSFET 14 Amps 1000V 0.82 Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTH14N100 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH14N100 Datasheet
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
FET - Single
Serie
IXTH14N100
Confezione
Tubo
Unità di peso
0.229281 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
360 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
36 ns
Ora di alzarsi
21 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
14 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Rds-On-Drain-Source-Resistenza
820 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
80 ns
Tempo di ritardo all'accensione tipico
24 ns
Modalità canale
Aumento
Tags
IXTH14, IXTH1, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 1000V 14A TO-247
***omponent
IXYS power module
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):700mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:360W; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:820mohm; Package / Case:TO-247; Power Dissipation Pd:360W; Power Dissipation Pd:360W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V
Parte # Mfg. Descrizione Azione Prezzo
IXTH14N100
DISTI # IXTH14N100-ND
IXYS CorporationMOSFET N-CH 1000V 14A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$15.0183
IXTH14N100
DISTI # 747-IXTH14N100
IXYS CorporationMOSFET 14 Amps 1000V 0.82 Rds
RoHS: Compliant
0
    IXTH14N100IXYS Corporation 284
    • 114:$16.6021
    • 55:$17.6397
    • 1:$20.7526
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    Disponibilità
    Azione:
    Available
    Su ordine:
    4000
    Inserisci la quantità:
    Il prezzo attuale di IXTH14N100 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    22,53 USD
    22,53 USD
    10
    21,40 USD
    214,01 USD
    100
    20,27 USD
    2 027,47 USD
    500
    19,15 USD
    9 574,20 USD
    1000
    18,02 USD
    18 022,00 USD
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