IRF7807TRPBF

IRF7807TRPBF
Mfr. #:
IRF7807TRPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 30V 8.3A 8-SOIC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF7807TRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IRF7807TRPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IR
categoria di prodotto
FET - Single
Confezione
Bobina
Unità di peso
0.019048 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SOIC-8
Tecnologia
si
Numero di canali
1 Channel
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
2.5 W
Vgs-Gate-Source-Voltage
12 V
Id-Continuo-Scarico-Corrente
8.3 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
25 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
12 nC
Tags
IRF7807TRP, IRF7807T, IRF7807, IRF780, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, N-Channel MOSFET, 8.3 A, 30 V, 8-Pin SOIC Infineon IRF7807TRPBF
***ark
Mosfet Transistor, N Channel, 8.3 A, 30 V, 25 Mohm, 4.5 V, 1 V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ure Electronics
Single N-Channel 30 V 25 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***et
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
***et Europe
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC
***ponent Sense
MOSFET N-CH 30V 8.3A 8-SOIC
***ied Electronics & Automation
MOSFET; 30V; 8.3A; 25 MOHM; 12 NC QG; SO-8
***ronik
N-CH 30V 8,3A 25mOhm SO-8 RoHSconf
***ukat
N-Ch 30V 8,3A 2,5W 0,025R SO8
***ment14 APAC
Prices include import duty and tax. MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:8.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:66A; Row Pitch:6.3mm; SMD Marking:IRF7807PBF; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***nell
MOSFET, N, LOGIC, SO-8; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:8.3A; Napięcie drenu / źródła Vds:30V; Rezystancja przewodzenia Rds(on):0.025ohm; Napięcie Vgs pomiaru Rds(on):4.5V; Napięcie progowe Vgs:1V; Straty mocy Pd:2.5W; Rodzaj obudowy tranzystora:SOIC; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Długość/wysokość zewnętrzna:1.75mm; Głębokość zewnętrzna:5.2mm; Liczba tranzystorów:1; Maks. prąd Id:8.3A; Napięcie Vds, typ.:30V; Napięcie Vgs pomiaru Rds on:4.5V; Napięcie Vgs, maks.:1V; Oznaczenie SMD:IRF7807PBF; Prąd impulsowy Idm:66A; Rozstaw rzędów:6.3mm; Szerokość zewnętrzna:4.05mm; Temperatura przy pełnej mocy znamionowej:25°C; Temperatura przy pomiarze prądu:25°C; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRF7807TRPBF
DISTI # V72:2272_13890715
Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
RoHS: Compliant
267
  • 250:$0.5389
  • 100:$0.5403
  • 25:$0.6604
  • 10:$0.6630
  • 1:$0.7507
IRF7807TRPBF
DISTI # IRF7807PBFCT-ND
Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3432In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
IRF7807TRPBF
DISTI # IRF7807PBFDKR-ND
Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3432In Stock
  • 1000:$0.4929
  • 500:$0.6243
  • 100:$0.8050
  • 10:$1.0190
  • 1:$1.1500
IRF7807TRPBF
DISTI # IRF7807PBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
On Order
  • 4000:$0.4466
IRF7807TRPBF
DISTI # 27177193
Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
RoHS: Compliant
12000
  • 4000:$0.3706
IRF7807TRPBF
DISTI # 26196317
Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
RoHS: Compliant
267
  • 250:$0.5389
  • 100:$0.5403
  • 25:$0.6604
  • 20:$0.6630
IRF7807TRPBF
DISTI # SP001570502
Infineon Technologies AGMOSFET, 30V, 8.3A, 25 MOHM, 12 NC QG, SO-8 (Alt: SP001570502)
RoHS: Compliant
Min Qty: 4000
Europe - 0
  • 4000:€0.3329
  • 8000:€0.3319
  • 16000:€0.3309
  • 24000:€0.3309
  • 40000:€0.3299
IRF7807TRPBF-EL
DISTI # IRF7807TRPBF-EL
Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R (Alt: IRF7807TRPBF-EL)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
    IRF7807TRPBF-EL
    DISTI # IRF7807TRPBF
    Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7807TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel
    Americas - 0
    • 4000:$0.3339
    • 8000:$0.3219
    • 16000:$0.3099
    • 24000:$0.2999
    • 40000:$0.2939
    IRF7807TRPBF
    DISTI # 13AC9207
    Infineon Technologies AGMOSFET, N-CH, 30V, 8.3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation RoHS Compliant: Yes228
    • 1:$0.9600
    • 10:$0.8120
    • 25:$0.7490
    • 50:$0.6870
    • 100:$0.6240
    • 250:$0.5880
    • 500:$0.5520
    • 1000:$0.4350
    IRF7807TRPBF
    DISTI # 70017540
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 17 Milliohms,ID 8.3A,SO-8,PD 2.5W,VGS +/-12V
    RoHS: Compliant
    0
    • 4000:$1.0370
    IRF7807TRPBF
    DISTI # 942-IRF7807TRPBF
    Infineon Technologies AGMOSFET MOSFT 30V 8.3A 25mOhm 12nC
    RoHS: Compliant
    2577
    • 1:$0.9600
    • 10:$0.8120
    • 100:$0.6240
    • 500:$0.5520
    • 1000:$0.4350
    • 4000:$0.3860
    IRF7807TRPBF
    DISTI # 8273880P
    Infineon Technologies AGHEXFET MOSFET 8.3A 30V FOR DC-DC SOIC8, RL1820
    • 100:£0.4520
    • 500:£0.4000
    • 2000:£0.3150
    • 4000:£0.2800
    IRF7807TRPBF
    DISTI # IRF7807PBF-GURT
    Infineon Technologies AGN-Ch 30V 8,3A 2,5W 0,025R SO8
    RoHS: Compliant
    3250
    • 50:€0.4070
    • 100:€0.3470
    • 500:€0.3170
    • 2000:€0.3050
    IRF7807TRPBFInternational Rectifier 
    RoHS: Compliant
    Europe - 4000
      IRF7807TRPBFInternational RectifierINSTOCK3990
        IRF7807TRPBF48INSTOCK3990
          IRF7807TRPBF
          DISTI # 2725916
          Infineon Technologies AGMOSFET, N-CH, 30V, 8.3A, SOIC
          RoHS: Compliant
          233
          • 5:£0.6350
          • 25:£0.6200
          • 100:£0.4570
          • 250:£0.4310
          • 500:£0.4040
          IRF7807TRPBF
          DISTI # C1S322000486209
          Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
          RoHS: Compliant
          267
          • 250:$0.5389
          • 100:$0.5403
          • 25:$0.6604
          • 10:$0.6630
          IRF7807TRPBF
          DISTI # C1S322000486193
          Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
          RoHS: Compliant
          12000
          • 4000:$0.4280
          IRF7807TRPBF
          DISTI # 2725916
          Infineon Technologies AGMOSFET, N-CH, 30V, 8.3A, SOIC
          RoHS: Compliant
          228
          • 1:$1.5300
          • 10:$1.2900
          • 100:$0.9870
          • 500:$0.8740
          • 1000:$0.6890
          • 4000:$0.6530
          IRF7807TRPBF
          DISTI # XSLY00000000847
          INFINEON/IRSO-8
          RoHS: Compliant
          4000
          • 4000:$0.4900
          Immagine Parte # Descrizione
          IRF7807VD2PBF

          Mfr.#: IRF7807VD2PBF

          OMO.#: OMO-IRF7807VD2PBF

          MOSFET 30V FETKY 30 VBRD 25mOhms 9.5nC
          IRF7807D1

          Mfr.#: IRF7807D1

          OMO.#: OMO-IRF7807D1-INFINEON-TECHNOLOGIES

          MOSFET N-CH 30V 8.3A 8-SOIC
          IRF7809PBF

          Mfr.#: IRF7809PBF

          OMO.#: OMO-IRF7809PBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 28V 14.5A 8-SOIC
          IRF7805TRPBF.

          Mfr.#: IRF7805TRPBF.

          OMO.#: OMO-IRF7805TRPBF--1190

          Nuovo e originale
          IRF7807D1TR

          Mfr.#: IRF7807D1TR

          OMO.#: OMO-IRF7807D1TR-INFINEON-TECHNOLOGIES

          MOSFET N-CH 30V 8.3A 8-SOIC
          IRF7807D1TRPBF

          Mfr.#: IRF7807D1TRPBF

          OMO.#: OMO-IRF7807D1TRPBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 30V 8.3A 8-SOIC
          IRF7807VTRPBF

          Mfr.#: IRF7807VTRPBF

          OMO.#: OMO-IRF7807VTRPBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 30V 8.3A 8-SOIC
          IRF7809

          Mfr.#: IRF7809

          OMO.#: OMO-IRF7809-INFINEON-TECHNOLOGIES

          MOSFET N-CH 30V 17.6A 8-SOIC
          IRF7809AVPBF

          Mfr.#: IRF7809AVPBF

          OMO.#: OMO-IRF7809AVPBF-1190

          MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC
          IRF7807VD2TRPBF

          Mfr.#: IRF7807VD2TRPBF

          OMO.#: OMO-IRF7807VD2TRPBF-INFINEON-TECHNOLOGIES

          IGBT Transistors MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 9.5nC
          Disponibilità
          Azione:
          Available
          Su ordine:
          2500
          Inserisci la quantità:
          Il prezzo attuale di IRF7807TRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          0,52 USD
          0,52 USD
          10
          0,49 USD
          4,94 USD
          100
          0,47 USD
          46,79 USD
          500
          0,44 USD
          220,95 USD
          1000
          0,42 USD
          415,90 USD
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