OMO ElectronicOMO Electronic
Expand menu
0 Carrello

2SC3647T-TD-E

2SC3647T-TD-E
Mfr. #:
2SC3647T-TD-E
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - BJT BIP NPN 2A 100V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
2SC3647T-TD-E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PCP-3
Polarità del transistor:
NPN
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
100 V
Collettore-tensione di base VCBO:
120 V
Emettitore-tensione di base VEBO:
6 V
Tensione di saturazione collettore-emettitore:
0.13 V
Corrente massima del collettore CC:
3 A
Guadagno larghezza di banda prodotto fT:
120 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
2SC3647
Confezione:
Bobina
Marca:
ON Semiconductor
Pd - Dissipazione di potenza:
1.5 W
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
1000
sottocategoria:
transistor
Unità di peso:
0.001817 oz
Tags
2SC3647, 2SC364, 2SC36, 2SC3, 2SC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
***(Formerly Allied Electronics)
ON Semi 2SC3647T-TD-E NPN Bipolar Transistor; 2 A; 100 V; 3-Pin PCP
***ical
Trans GP BJT NPN 100V 2A 500mW 4-Pin(3+Tab) SOT-89 T/R
***Yang
Bipolar Transistors - BJT BIP NPN 2A 100V
***ment14 APAC
Transistor, NPN, 100V, 2A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:120MHz; Power
***ark
TRANSISTOR, NPN, 100V, 2A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
***nell
TRANSISTOR, NPN, 100V, 2A, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***hard Electronics
DIODES INC. DXTN07100BP5-13 Bipolar (BJT) Single Transistor, POWERDI5, NPN, 100 V, 175 MHz, 3.2 W, 2 A, 200 hFE
***ical
Trans GP BJT NPN 100V 2A 3200mW 3-Pin(3+Tab) PowerDI 5 T/R
***nell
TRANS, NPN, 100V, 2A, POWERDI5; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 3.2W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transistor Case Style: PowerDI5; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 175MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***ca Corp
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
***ure Electronics
FZT603 Series 80 V 2 A NPN SMT Darlington Medium Power Transistor - SOT-223
***ical
Trans Darlington NPN 80V 2A 2000mW 4-Pin(3+Tab) SOT-223 T/R
***ark
Darlington Transistor, Sot-223; Transistor Polarity:Npn; Collector Emitter Voltage Max:140V; Continuous Collector Current:2A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:150Mhz Rohs Compliant: Yes |Diodes Inc. FZT603TA
***nell
DARLINGTON TRANSISTOR, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 140V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 15000hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Av Current Ic: 2A; Collector Emitter Saturation Voltage Vce(on): 250mV; Continuous Collector Current Ic Max: 2A; Current Ic @ Vce Sat: 3A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 5000; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Ptot Max: 2W; Pulsed Current Icm: 6A; SMD Marking: FZT600; Termination Type: Surface Mount Device; Transistor Type: Darlington; Voltage Vcbo: 160V
***et
NPN Silicon Darlington Transistor
***i-Key
TRANS NPN DARL 100V 2A DPAK
***ure Electronics
NZT Series NPN 1000 mW 110 V 1.5 A Surface Mount Darlington Transistor - SOT-223
*** Stop Electro
Small Signal Bipolar Transistor, 1.5A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Darlington NPN 110V 1.5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***nell
TRANSISTOR, NPN, 110V, 1.5A, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 110V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 1W; DC Collector Current: 1.5A; DC Current Gain hFE: 200hFE; Tr
***emi
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
*** Stop Electro
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
***ure Electronics
MJD112 Series 100 V 2 A SMT NPN Silicon Darlington Transistor - TO-252-3
*** Source Electronics
TRANS NPN DARL 100V 2A DPAK / Trans Darlington NPN 100V 2A 1750mW 3-Pin(2+Tab) DPAK T/R
*** Electronic Components
Darlington Transistors NPN Si Transistor Darlington
***nell
TRANSISTOR, BIPOL, NPN, 100V, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 20W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
ZXTN25100 Series 100 V 2.5 A 1.25 W NPN Medium Power Transistor - SOT23
***(Formerly Allied Electronics)
Trans,NPN,Transistor,GP,100V 2.5A SOT23 | Diodes Inc ZXTN25100DFHTA
*** Electronics
Trans GP BJT NPN 100V 2.5A 1810mW Automotive 3-Pin SOT-23 T/R
***ment14 APAC
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:175MHz; Power Dissipation Pd:1.25W; DC Collector Current:2.5A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:95mV; Continuous Collector Current Ic Max:2.5A; Current Gain Hfe Max:900; Current Ic Continuous a Max:2.5A; Current Ic hFE:10mA; Current Ic hfe -Do Not Use See ID 1182:10mA; DC Current Gain Hfe Max:900; DC Current Gain Hfe Min:300; Gain Bandwidth ft Typ:175MHz; Hfe Min:300; Hfe Typ:450; Hfe Typ:450; Package / Case:SOT-23; Power Dissipation Pd:1.25W; Power Dissipation Ptot Max:1.25W; Termination Type:SMD; Voltage Vcbo:180V
Parte # Mfg. Descrizione Azione Prezzo
2SC3647T-TD-E
DISTI # 2SC3647T-TD-EOSCT-ND		ON SemiconductorTRANS NPN 100V 2A SOT89-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3819In Stock
  • 500:$0.2874
  • 100:$0.3658
  • 10:$0.4900
  • 1:$0.5700
2SC3647T-TD-E
DISTI # 2SC3647T-TD-EOSDKR-ND		ON SemiconductorTRANS NPN 100V 2A SOT89-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3819In Stock
  • 500:$0.2874
  • 100:$0.3658
  • 10:$0.4900
  • 1:$0.5700
2SC3647T-TD-E
DISTI # 2SC3647T-TD-EOSTR-ND		ON SemiconductorTRANS NPN 100V 2A SOT89-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		3000In Stock
  • 25000:$0.1691
  • 10000:$0.1712
  • 5000:$0.1839
  • 2000:$0.1966
  • 1000:$0.2156
2SC3647T-TD-E
DISTI # 2SC3647T-TD-E		ON SemiconductorTrans GP BJT NPN 100V 2A 4-Pin(3+Tab) PCP T/R (Alt: 2SC3647T-TD-E)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€0.2409
  • 2000:€0.1819
  • 4000:€0.1659
  • 6000:€0.1479
  • 10000:€0.1399
2SC3647T-TD-E
DISTI # 2SC3647T-TD-E		ON SemiconductorTrans GP BJT NPN 100V 2A 4-Pin(3+Tab) PCP T/R - Tape and Reel (Alt: 2SC3647T-TD-E)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1439
  • 5000:$0.1429
  • 8000:$0.1409
  • 15000:$0.1389
  • 30000:$0.1359
2SC3647T-TD-E
DISTI # 70341648		ON SemiconductorON Semi 2SC3647T-TD-E NPN Bipolar Transistor,2 A,100 V,3-Pin PCP
RoHS: Compliant		0
  • 100:$0.1910
  • 250:$0.1870
  • 500:$0.1830
  • 1000:$0.1800
2SC3647T-TD-ESANYO Semiconductor Co Ltd 
RoHS: Not Compliant		983
  • 1000:$0.2100
  • 500:$0.2200
  • 100:$0.2300
  • 25:$0.2400
  • 1:$0.2500
2SC3647S-TD-E
DISTI # 863-2SC3647S-TD-E		ON SemiconductorBipolar Transistors - BJT BIP NPN 2A 100V
RoHS: Compliant		2532
  • 1:$0.5100
  • 10:$0.4160
  • 100:$0.2540
  • 1000:$0.1960
  • 2000:$0.1680
  • 10000:$0.1560
  • 25000:$0.1480
  • 50000:$0.1440
2SC3647T-TD-E
DISTI # 863-2SC3647T-TD-E		ON SemiconductorBipolar Transistors - BJT BIP NPN 2A 100V
RoHS: Compliant		3216
  • 1:$0.5300
  • 10:$0.4370
  • 100:$0.2660
  • 1000:$0.2060
  • 2000:$0.1760
  • 10000:$0.1640
  • 25000:$0.1550
  • 50000:$0.1510
2SC3647T-TD-E
DISTI # 7740702		ON SemiconductorTRANSISTOR NPN 100V 2A HFE200-400 SOT89, PK140
  • 10:£0.3220
2SC3647T-TD-E
DISTI # 7740702P		ON SemiconductorTRANSISTOR NPN 100V 2A HFE200-400 SOT89, RL20
  • 10:£0.3220
2SC3647T-TD-E
DISTI # 2724341		ON SemiconductorTRANSISTOR, NPN, 100V, 2A, SOT-89
RoHS: Compliant		788
  • 5:£0.3810
  • 25:£0.3590
  • 100:£0.2050
  • 250:£0.1820
  • 500:£0.1600
2SC3647T-TD-E
DISTI # 2724341		ON SemiconductorTRANSISTOR, NPN, 100V, 2A, SOT-89
RoHS: Compliant		788
  • 1:$0.9030
  • 10:$0.7750
  • 100:$0.5790
  • 500:$0.4550
Immagine Parte # Descrizione
AT27C4096-90PU

Mfr.#: AT27C4096-90PU

OMO.#: OMO-AT27C4096-90PU

 EPROM 4Mb (256Kx16) OTP 5V 90ns
S29GL256P90TFCR10

Mfr.#: S29GL256P90TFCR10

OMO.#: OMO-S29GL256P90TFCR10

 NOR Flash 256M 3.0V 90ns Parallel NOR Flash
FMMT624TA

Mfr.#: FMMT624TA

OMO.#: OMO-FMMT624TA

 Bipolar Transistors - BJT NPN SuperSOT
1SS226,LF

Mfr.#: 1SS226,LF

OMO.#: OMO-1SS226-LF

 Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR
ACPL-M50L-560E

Mfr.#: ACPL-M50L-560E

OMO.#: OMO-ACPL-M50L-560E

 High Speed Optocouplers Low Drive Opto
1376135-1

Mfr.#: 1376135-1

OMO.#: OMO-1376135-1

 Headers & Wire Housings D-2100 HDR R/A 3P KEY X
DSC6011JI1A-024.0000

Mfr.#: DSC6011JI1A-024.0000

OMO.#: OMO-DSC6011JI1A-024-0000-MICROCHIP-TECHNOLOGY

 MEMS OSCILLATOR, ULTRA LOW POW
AT27C4096-90PU

Mfr.#: AT27C4096-90PU

OMO.#: OMO-AT27C4096-90PU-MICROCHIP-TECHNOLOGY

 EPROM 4Mb (256Kx16) OTP 5V 90ns
ACPL-M50L-560E

Mfr.#: ACPL-M50L-560E

OMO.#: OMO-ACPL-M50L-560E-BROADCOM

 High Speed Optocouplers Low Drive Opto
S29GL256P90TFCR10

Mfr.#: S29GL256P90TFCR10

OMO.#: OMO-S29GL256P90TFCR10-CYPRESS-SEMICONDUCTOR

 IC FLASH 256M PARALLEL 56TSOP
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di 2SC3647T-TD-E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,47 USD
0,47 USD
10
0,39 USD
3,93 USD
100
0,24 USD
23,90 USD
Iniziare con
Top