STH270N8F7-2

Mfr. #:: STH270N8F7-2
Produttore:: STMicroelectronics
Descrizione:: MOSFET N-CH 80V 17mOhm 180A STripFET VII
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: STH270N8F7-2 Scheda dati
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Maggiori informazioni:: STH270N8F7-2 maggiori informazioni STH270N8F7-2 Product Details

Attributo del prodotto
Valore attributo

Produttore:: STMicroelectronics

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: H2PAK-2

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 80 V

Id - Corrente di scarico continua:: 180 A

Rds On - Resistenza Drain-Source:: 2.1 mOhms

Vgs th - Tensione di soglia gate-source:: 2 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 193 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 315 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: STRIPFET

Confezione:: Bobina

Serie:: STH270N8F7-2

Tipo di transistor:: 1 N-Channel

Marca:: STMicroelectronics

Tempo di caduta:: 42 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 180 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 98 ns

Tempo di ritardo di accensione tipico:: 56 ns

Unità di peso:: 0.139332 oz

Tags: STH270N8, STH270, STH27, STH2, STH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STH270N8F7-2 Descrizione

***icroelectronics: N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

***ical: Trans MOSFET N-CH 80V 180A 3-Pin(2+Tab) H2PAK T/R

***ment14 APAC: MOSFET, N-CH, 80V, 180A, 175DEG C, 315W

*** Electronic Components: MOSFET N-CH 80V 17mOhm 180A STripFET VII

***r Electronics: Power Field-Effect Transistor, 180A I(D), 80V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics SCT: Power MOSFETs, 80V, 180A, H2PAK-2, Tape and Reel

***nell: MOSFET, N-CH, 80V, 180A, 175DEG C, 315W; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 315W; Transistor Case Style: H2PAK-2; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): IRFS7730PBF N-channel MOSFET Transistor; 246 A; 75 V; 3-Pin D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH Si 75V 246A 3-Pin(2+Tab) D2PAK Tube

***nell: MOSFET, N-CH, 75V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 246A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7

***ineon: Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

***icroelectronics: N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

***ure Electronics: N-Channel 100 V 2.3 mOhm STripFET VII DeepGATE Power Mosfet-H2PAK-2

***ark: MOSFET, N-CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 80V 180A Automotive 3-Pin(2+Tab) H2PAK T/R

***icroelectronics: Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

***icroelectronics: N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package

***ical: Trans MOSFET N-CH 60V 180A 3-Pin(2+Tab) H2PAK T/R

*** Electronic Components: MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI

***r Electronics: Power Field-Effect Transistor, 180A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics SCT: Power MOSFETs, 60V, 180A, H2PAK-2, Tape and Reel

***ark: Mosfet, N Ch, 60V, 180A, H2Pak-2; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0016Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ark: Mosfet Transistor, N Channel, 195 A, 60 V, 0.00165 Ohm, 10 V, 3.7 V

*** Source Electronics: MOSFET N CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R

***trelec: Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - D2PAK

***(Formerly Allied Electronics): MOSFET,60V, 195A, 2.0mOhm, 274 nC, D2PAK

*** Stop Electro: Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***nell: MOSFET, N CH, 60V, 195A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V

STH270N8F7-2 Maggiori informazioni

STripFET Power MOSFETs: STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.

STripFET™ F7 Power MOSFETs: STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

STMicroelectronics STripFET VII Power MOSFETs

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
STH270N8F7-2 DISTI # V36:1790_06560864	STMicroelectronics	Trans MOSFET N-CH 80V 180A 3-Pin(2+Tab) H2PAK T/R RoHS: Compliant	0
STH270N8F7-2 DISTI # 497-13873-2-ND	STMicroelectronics	MOSFET N-CH 80V 180A H2PAK-2 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$4.7888
STH270N8F7-2 DISTI # 497-13873-1-ND	STMicroelectronics	MOSFET N-CH 80V 180A H2PAK-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$5.5803 100:$6.5521 10:$7.8480 1:$8.6600
STH270N8F7-2 DISTI # 497-13873-6-ND	STMicroelectronics	MOSFET N-CH 80V 180A H2PAK-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$5.5803 100:$6.5521 10:$7.8480 1:$8.6600
STH270N8F7-2 DISTI # STH270N8F7-2	STMicroelectronics	Trans MOSFET N-CH 80V 180A 2-Pin H2PAK T/R - Tape and Reel (Alt: STH270N8F7-2) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$4.1900 2000:$3.9900 4000:$3.8900 6000:$3.6900 10000:$3.5900
STH270N8F7-2 DISTI # STH270N8F7-2	STMicroelectronics	Trans MOSFET N-CH 80V 180A 2-Pin H2PAK T/R (Alt: STH270N8F7-2) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	1000:$2.0000 2000:$1.9048 3000:$1.8182 5000:$1.7391 10000:$1.6667 25000:$1.6216 50000:$1.5790
STH270N8F7-2 DISTI # STH270N8F7-2	STMicroelectronics	Trans MOSFET N-CH 80V 180A 2-Pin H2PAK T/R (Alt: STH270N8F7-2) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€2.2900 2000:€2.1900 4000:€2.0900 6000:€1.8900 10000:€1.7900
STH270N8F7-2 DISTI # 06X3625	STMicroelectronics	PTD LOW VOLTAGE	0	1500:$3.4100 1000:$3.5800 500:$3.8100 250:$3.9200 1:$4.0100
STH270N8F7-2 DISTI # 511-STH270N8F7-2	STMicroelectronics	MOSFET N-CH 80V 17mOhm 180A STripFET VII RoHS: Compliant	157	1:$6.8000 10:$6.1400 25:$5.8600 100:$5.0800 250:$4.8600 500:$4.4300 1000:$3.8600 2000:$3.7100
STH270N8F7-2	STMicroelectronics	STH270N8F7 Series 80 V 180 A 0.0021 Ohm N-Ch STripFET F7 Power Mosfet - H2PAK-2 RoHS: Compliant	1000Reel	1000:$3.6800
STH270N8F7-2 DISTI # 7925855P	STMicroelectronics	MOSFET N-CH 80V 180A STRIPFET H2PAK2, RL	5356	500:£3.2800 100:£3.7500 40:£4.3300 20:£4.5400
STH270N8F7-2	STMicroelectronics		1034
STH270N8F7-2 DISTI # XSFP00000147294	STMicroelectronics	RISC Microcontroller, 32-Bit, FLASH,CORTEX-M4FCPU,168MHz, CMOS, PBGA90 RoHS: Compliant	3000 in Stock0 on Order	3000:$6.6900 1000:$7.3600

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Disponibilità

Azione:: 104
Su ordine:: 2087
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Il prezzo attuale di STH270N8F7-2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~6,80 USD~~; ~~6,80 USD~~

10: ~~6,14 USD~~; ~~61,40 USD~~

25: ~~5,86 USD~~; ~~146,50 USD~~

100: ~~5,08 USD~~; ~~508,00 USD~~

250: ~~4,86 USD~~; ~~1 215,00 USD~~

500: ~~4,43 USD~~; ~~2 215,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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STH270N8F7-2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes