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IHW30N90T

IHW30N90T
Mfr. #:
IHW30N90T
Produttore:
Rochester Electronics, LLC
Descrizione:
IGBT Transistors LOW LOSS DuoPack 900V 30A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IHW30N90T Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
categoria di prodotto
IGBT - Singolo
Serie
IHW30N90
Confezione
Tubo
Alias ​​parziali
IHW30N90TFKSA1 IHW30N90TXK SP000076322
Unità di peso
1.340411 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-247-3
Configurazione
Separare
Pd-Power-Dissipazione
428 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 40 C
Collettore-Emettitore-Tensione-VCEO-Max
900 V
Collettore-Emettitore-Saturazione-Tensione
1.5 V
Continuo-Collettore-Corrente-a-25-C
30 A
Massima-tensione-gate-emettitore
+/- 20 V
Continuo-Collettore-Corrente-Ic-Max
30 A
Tags
IHW30N90T, IHW30N9, IHW30N, IHW3, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans IGBT Chip N-CH 900V 30A 428000mW 3-Pin(3+Tab) TO-247 Tube
***ronik
IGBT 900V 30A 1.5V TO247-3
***ment14 APAC
IGBT+ DIODE,900V,30A,TO247
***i-Key
IGBT, 60A, 900V, N-CHANNEL
***el Electronic
IGBT 900V 60A 428W TO247-3
***nell
IGBT+ DIODE,900V,30A,TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 428W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +175°C; Power Dissipation Max: 428W; Transistor Type: IGBT
Parte # Mfg. Descrizione Azione Prezzo
IHW30N90T
DISTI # 30602191		Infineon Technologies AGTrans IGBT Chip N-CH 900V 30A 3-Pin(3+Tab) TO-247
RoHS: Compliant		9
  • 5:$5.2020
IHW30N90TFKSA1
DISTI # IHW30N90TFKSA1-ND		Infineon Technologies AGIGBT 900V 60A 428W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IHW30N90T
    DISTI # IHW30N90T    		Infineon Technologies AGTrans IGBT Chip N-CH 900V 30A 3-Pin TO-247 Tube - Bulk (Alt: IHW30N90T)
    RoHS: Not Compliant
    Min Qty: 125
    Container: Bulk    		Americas - 0
    • 625:$2.4900
    • 1250:$2.4900
    • 375:$2.5900
    • 250:$2.6900
    • 125:$2.7900
    IHW30N90T
    DISTI # SP000076322    		Infineon Technologies AGTrans IGBT Chip N-CH 900V 30A 3-Pin TO-247 Tube (Alt: SP000076322)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€2.2900
    • 100:€2.3900
    • 500:€2.3900
    • 50:€2.4900
    • 10:€2.5900
    • 25:€2.5900
    • 1:€2.6900
    IHW30N90T
    DISTI # 726-IHW30N90T    		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 900V 30A
    RoHS: Compliant    		1
    • 1:$5.6000
    • 10:$4.5000
    • 25:$4.4200
    • 100:$4.1000
    • 250:$3.7000
    • 500:$3.3000
    IHW30N90TInfineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-247AD
    RoHS: Compliant    		6670
    • 1000:$2.6300
    • 500:$2.7700
    • 100:$2.8800
    • 25:$3.0100
    • 1:$3.2400
    IHW30N90TFKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-247AD
    RoHS: Compliant    		80
    • 1000:$2.6300
    • 500:$2.7700
    • 100:$2.8800
    • 25:$3.0100
    • 1:$3.2400
    IHW30N90T
    DISTI # 1832367    		Infineon Technologies AGIGBT+ DIODE,900V,30A,TO247
    RoHS: Compliant    		152
    • 1:$3.4300
    Immagine Parte # Descrizione
    IHW30N160R2

    Mfr.#: IHW30N160R2

    OMO.#: OMO-IHW30N160R2

    		 IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
    IHW30N120R3FKSA1

    Mfr.#: IHW30N120R3FKSA1

    OMO.#: OMO-IHW30N120R3FKSA1-INFINEON-TECHNOLOGIES

    		 IGBT 1200V 60A 349W TO247-3
    IHW30N1202

    Mfr.#: IHW30N1202

    OMO.#: OMO-IHW30N1202-1190

    		 Nuovo e originale
    IHW30N160R2(H30R1602)

    Mfr.#: IHW30N160R2(H30R1602)

    OMO.#: OMO-IHW30N160R2-H30R1602--1190

    		 Nuovo e originale
    IHW30N60H3

    Mfr.#: IHW30N60H3

    OMO.#: OMO-IHW30N60H3-1190

    		 Nuovo e originale
    IHW30N90T,IKW30N100R,

    Mfr.#: IHW30N90T,IKW30N100R,

    OMO.#: OMO-IHW30N90T-IKW30N100R--1190

    		 Nuovo e originale
    IHW30R1103R3

    Mfr.#: IHW30R1103R3

    OMO.#: OMO-IHW30R1103R3-1190

    		 Nuovo e originale
    IHW30R1202

    Mfr.#: IHW30R1202

    OMO.#: OMO-IHW30R1202-1190

    		 Nuovo e originale
    IHW30N110R3

    Mfr.#: IHW30N110R3

    OMO.#: OMO-IHW30N110R3-126

    		 IGBT Transistors IGBT PRODUCTS
    IHW30N160R2

    Mfr.#: IHW30N160R2

    OMO.#: OMO-IHW30N160R2-126

    		 IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
    Disponibilità
    Azione:
    Available
    Su ordine:
    2000
    Inserisci la quantità:
    Il prezzo attuale di IHW30N90T è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    3,74 USD
    3,74 USD
    10
    3,55 USD
    35,48 USD
    100
    3,36 USD
    336,15 USD
    500
    3,17 USD
    1 587,40 USD
    1000
    2,99 USD
    2 988,00 USD
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