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STP10N60M2

STP10N60M2
Mfr. #:
STP10N60M2
Produttore:
STMicroelectronics
Descrizione:
MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STP10N60M2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STP10N60M2 maggiori informazioni STP10N60M2 Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
7.5 A
Rds On - Resistenza Drain-Source:
560 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
25 V
Qg - Carica cancello:
13.5 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
85 W
Configurazione:
Separare
Nome depositato:
MDmesh
Confezione:
Tubo
Serie:
STP10N60M2
Tipo di transistor:
1 N-Channel
Marca:
STMicroelectronics
Tempo di caduta:
13.2 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
8 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
32.5 ns
Tempo di ritardo di accensione tipico:
8.8 ns
Unità di peso:
0.011640 oz
Tags
STP10N60, STP10N6, STP10N, STP10, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 600 V 85 W 0.6 Ohm Flange Mount Power MosFet - TO-220-3
***(Formerly Allied Electronics)
MOSFET N-Ch 600V 7.5A MDmesh II TO-220
***ark
MOSFET, N-CH, 600V, 7.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 600V, 7.5A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 600 V 600 mOhm Flange Mount MDmesh II Plus Power Mosfet -TO-220FP
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 7.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***ineon SCT
Single N-Channel 600 V 460 mOhm 28 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
***ical
Trans MOSFET N-CH 600V 13.1A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 13.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.1A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***icroelectronics
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
***ure Electronics
N-Channel 600 V 600 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 600V, 7.5A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***icroelectronics
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 650 V 0.78 Ohm Flange Mount Mdmesh II Plus Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) TO-220FP Tube
***et
CoolMOS E6 Power Transistor N-Channel 600V 9.2A 3-Pin TO-220FP
***el Electronic
Trans MOSFET N-CH 650V 9.2A 3-Pin(3+Tab) TO-220 Full-Pack
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ineon SCT
Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS
***ow.cn
Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Parte # Mfg. Descrizione Azione Prezzo
STP10N60M2
DISTI # C1S730200794505		STMicroelectronicsTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		20
  • 1:$0.6960
STP10N60M2
DISTI # 497-13970-5-ND		STMicroelectronicsMOSFET N-CH 600V TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1999In Stock
  • 5000:$0.6773
  • 2500:$0.7129
  • 500:$0.9676
  • 100:$1.1713
  • 50:$1.4260
  • 10:$1.5020
  • 1:$1.6800
STP10N60M2
DISTI # V36:1790_06564793		STMicroelectronicsTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 2000000:$0.5650
  • 1000000:$0.5655
  • 200000:$0.6411
  • 20000:$0.7990
  • 2000:$0.8268
STP10N60M2
DISTI # STP10N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 7.5A 3-Pin TO-220 Tube (Alt: STP10N60M2)
RoHS: Compliant
Min Qty: 50
Container: Tube		Europe - 535
  • 500:€0.6309
  • 300:€0.6789
  • 200:€0.7359
  • 100:€0.8029
  • 50:€0.9819
STP10N60M2
DISTI # STP10N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 7.5A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP10N60M2)
RoHS: Compliant
Min Qty: 2000
Container: Tube		Americas - 0
  • 20000:$0.6189
  • 10000:$0.6319
  • 6000:$0.6609
  • 4000:$0.6919
  • 2000:$0.7269
STP10N60M2
DISTI # 45AC7683		STMicroelectronicsMOSFET, N-CH, 600V, 7.5A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:7.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.55ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes250
  • 10000:$0.6270
  • 2500:$0.6520
  • 1000:$0.7350
  • 500:$0.9310
  • 100:$1.0500
  • 10:$1.3600
  • 1:$1.6100
STP10N60M2
DISTI # 511-STP10N60M2		STMicroelectronicsMOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
RoHS: Compliant		1995
  • 1:$1.5900
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9220
  • 1000:$0.7280
  • 2000:$0.6460
  • 10000:$0.6210
STP10N60M2
DISTI # 7863763P		STMicroelectronicsMOSFET N-CH 600V 7.5A MDMESH II TO-220, TU1110
  • 1000:£0.6560
  • 500:£0.8300
  • 250:£0.9440
  • 50:£1.2160
STP10N60M2
DISTI # 2807275		STMicroelectronicsMOSFET, N-CH, 600V, 7.5A, TO-220AB
RoHS: Compliant		750
  • 5000:$1.0300
  • 2500:$1.0800
  • 500:$1.4600
  • 100:$1.7700
  • 50:$2.1500
  • 5:$2.2700
STP10N60M2
DISTI # 2807275		STMicroelectronicsMOSFET, N-CH, 600V, 7.5A, TO-220AB749
  • 500:£0.6680
  • 250:£0.7110
  • 100:£0.7530
  • 10:£1.0300
  • 1:£1.3100
STP10N60M2
DISTI # STP10N60M2		STMicroelectronicsN-Ch+Z-Dio 600V 7,5A 85W 0,6R TO220
RoHS: Compliant		180
  • 10:€1.0800
  • 50:€0.7800
  • 200:€0.6300
  • 500:€0.6100
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Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di STP10N60M2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,59 USD
1,59 USD
10
1,35 USD
13,50 USD
100
1,04 USD
104,00 USD
500
0,92 USD
461,00 USD
1000
0,73 USD
728,00 USD
2000
0,65 USD
1 292,00 USD
10000
0,62 USD
6 210,00 USD
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