NVJD4152PT1G

NVJD4152PT1G
Mfr. #:
NVJD4152PT1G
Produttore:
ON Semiconductor
Descrizione:
Trench Small Signal Dual P-Channel MOSFET 20V Drain Source Voltage 1A Continuous Drain Current 0.35W Power Dissipation ESD Protected 6-Pin SOT-363 T/R (Alt: NVJD4152PT1G)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NVJD4152PT1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
NVJD41, NVJD4, NVJD, NVJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Dual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ
***enic
20V 880mA 272mW 260m¦¸@4.5V880mA 1.2V@250¦ÌA 2 P-Channel SC-88 MOSFETs ROHS
***ical
Trans MOSFET P-CH 20V 1A Automotive 6-Pin SOT-363 T/R
***et Europe
Trench Small Signal Dual P-Channel MOSFET 20V Drain Source Voltage 1A Continuous Drain Current 0.35W Power Dissipation ESD Protected 6-Pin SOT-363 T/R
Parte # Mfg. Descrizione Azione Prezzo
NVJD4152PT1G
DISTI # NVJD4152PT1G
ON SemiconductorTrench Small Signal Dual P-Channel MOSFET 20V Drain Source Voltage 1A Continuous Drain Current 0.35W Power Dissipation ESD Protected 6-Pin SOT-363 T/R (Alt: NVJD4152PT1G)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 3000
  • 3000:€0.0633
  • 6000:€0.0478
  • 12000:€0.0435
  • 18000:€0.0390
  • 30000:€0.0368
NVJD4152PT1G
DISTI # NVJD4152PT1G
ON SemiconductorTrench Small Signal Dual P-Channel MOSFET 20V Drain Source Voltage 1A Continuous Drain Current 0.35W Power Dissipation ESD Protected 6-Pin SOT-363 T/R (Alt: NVJD4152PT1G)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel
Asia - 0
    Immagine Parte # Descrizione
    NVJD4152P

    Mfr.#: NVJD4152P

    OMO.#: OMO-NVJD4152P-1190

    Nuovo e originale
    NVJD4152PT1G

    Mfr.#: NVJD4152PT1G

    OMO.#: OMO-NVJD4152PT1G-1190

    Trench Small Signal Dual P-Channel MOSFET 20V Drain Source Voltage 1A Continuous Drain Current 0.35W Power Dissipation ESD Protected 6-Pin SOT-363 T/R (Alt: NVJD4152PT1G)
    NVJD4158CT1G

    Mfr.#: NVJD4158CT1G

    OMO.#: OMO-NVJD4158CT1G-1190

    Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A 6-Pin SC-88 T/R (Alt: NVJD4158CT1G)
    Disponibilità
    Azione:
    Available
    Su ordine:
    4500
    Inserisci la quantità:
    Il prezzo attuale di NVJD4152PT1G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,06 USD
    0,06 USD
    10
    0,06 USD
    0,60 USD
    100
    0,06 USD
    5,64 USD
    500
    0,05 USD
    26,65 USD
    1000
    0,05 USD
    50,10 USD
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