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IPB039N10N3GATMA1

IPB039N10N3GATMA1
Mfr. #:
IPB039N10N3GATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 100V 160A TO263-7
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB039N10N3GATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
XPB039N10
Confezione
Bobina
Alias ​​parziali
G IPB039N10N3 IPB039N10N3GXT SP000482428
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-263-7
Tecnologia
si
Numero di canali
1 Channel
Tipo a transistor
1 N-Channel
Polarità del transistor
Canale N
Tags
IPB039N10N3GA, IPB039N1, IPB039, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Dra
***p One Stop Japan
Trans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 100 V 3.9 mOhm 88 nC OptiMOS™ Power Mosfet - D2PAK-7
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-7, RoHS
***nell
MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:214W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Parte # Mfg. Descrizione Azione Prezzo
IPB039N10N3GATMA1
DISTI # IPB039N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$1.4355
IPB039N10N3GATMA1
DISTI # IPB039N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$1.7845
  • 100:$2.2943
  • 10:$2.8550
  • 1:$3.1600
IPB039N10N3GATMA1
DISTI # IPB039N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$1.7845
  • 100:$2.2943
  • 10:$2.8550
  • 1:$3.1600
IPB039N10N3GXT
DISTI # IPB039N10N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.0369
  • 2000:$0.9999
  • 4000:$0.9629
  • 6000:$0.9309
  • 10000:$0.9139
IPB039N10N3GATMA1
DISTI # 47W3465		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 160A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes0
  • 1:$2.6500
  • 10:$2.2500
  • 100:$1.8000
  • 500:$1.5800
IPB039N10N3 G
DISTI # 726-IPB039N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
RoHS: Compliant		37
  • 1:$2.6500
  • 10:$2.2500
  • 100:$1.8000
  • 500:$1.5800
  • 1000:$1.3100
IPB039N10N3GATMA1
DISTI # 726-IPB039N10N3GATMA		Infineon Technologies AGMOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
RoHS: Compliant		31
  • 1:$2.6500
  • 10:$2.2500
  • 100:$1.8000
  • 500:$1.5800
  • 1000:$1.3100
IPB039N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA
RoHS: Compliant		21
  • 1000:$1.2700
  • 500:$1.3300
  • 100:$1.3900
  • 25:$1.4500
  • 1:$1.5600
IPB039N10N3GATMA1
DISTI # 2212838		Infineon Technologies AGMOSFET, N-CH, 100V, 160A, TO263-7
RoHS: Compliant		0
  • 1:$4.1900
  • 10:$3.5600
  • 100:$2.8500
  • 500:$2.5000
  • 1000:$2.0700
IPB039N10N3GATMA1
DISTI # 2212838		Infineon Technologies AGMOSFET, N-CH, 100V, 160A, TO263-7
RoHS: Compliant		10
  • 1:£2.0700
  • 10:£1.6600
  • 100:£1.3100
  • 250:£1.2600
  • 500:£1.2000
Immagine Parte # Descrizione
IPB039N10N3 G

Mfr.#: IPB039N10N3 G

OMO.#: OMO-IPB039N10N3-G

 MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
IPB039N10N3GE8187ATMA1

Mfr.#: IPB039N10N3GE8187ATMA1

OMO.#: OMO-IPB039N10N3GE8187ATMA1

 MOSFET MV POWER MOS
IPB039N10N3GE8187ATMA1

Mfr.#: IPB039N10N3GE8187ATMA1

OMO.#: OMO-IPB039N10N3GE8187ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 160A TO263-7
IPB039N10N3GATMA1

Mfr.#: IPB039N10N3GATMA1

OMO.#: OMO-IPB039N10N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 160A TO263-7
IPB039N10N3GXT

Mfr.#: IPB039N10N3GXT

OMO.#: OMO-IPB039N10N3GXT-1190

 Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1)
IPB039N10N3G

Mfr.#: IPB039N10N3G

OMO.#: OMO-IPB039N10N3G-1190

 Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA
IPB039N10N3GATMA

Mfr.#: IPB039N10N3GATMA

OMO.#: OMO-IPB039N10N3GATMA-1190

 Nuovo e originale
IPB039N10N3GE8197ATMA1

Mfr.#: IPB039N10N3GE8197ATMA1

OMO.#: OMO-IPB039N10N3GE8197ATMA1-1190

 Nuovo e originale
IPB039N10N3 G

Mfr.#: IPB039N10N3 G

OMO.#: OMO-IPB039N10N3-G-126

 IGBT Transistors MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
IPB039N10N3GE818XT

Mfr.#: IPB039N10N3GE818XT

OMO.#: OMO-IPB039N10N3GE818XT-317

 RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di IPB039N10N3GATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,73 USD
1,73 USD
10
1,64 USD
16,42 USD
100
1,56 USD
155,51 USD
500
1,47 USD
734,35 USD
1000
1,38 USD
1 382,30 USD
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