Attributo del prodotto
Valore attributo

Produttore:: Toshiba

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: UDFN6B-6

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 60 V

Id - Corrente di scarico continua:: 6 A

Rds On - Resistenza Drain-Source:: 28 mOhms

Vgs th - Tensione di soglia gate-source:: 1.5 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 9.3 nC

Temperatura di esercizio minima:: -

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 1.25 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Tipo di transistor:: 1 N-Channel

Marca:: Toshiba

Tempo di caduta:: 6 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 48 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 18 ns

Tempo di ritardo di accensione tipico:: 63 ns

Unità di peso:: 0.000300 oz

Tags: SSM6K3, SSM6K, SSM6, SSM

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Step1:
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Step2:
Anti-Static Bag

Step3:
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SSM6K341NU,LF Descrizione

***ical: Trans MOSFET N-CH Si 60V 6A 6-Pin UDFN-B EP T/R

***et: N-Channel MOSFET 60V Drain to Source Voltage 6A Drain Current 1.28W Power Dissipation Surface Mount 6-Pin UDFN T/R

***i-Key: MOSFET N-CH 60V 6A 6-UDFNB

SSM6K341NU,LF Maggiori informazioni

SSM6K Silicon N-Channel MOSFETs: Toshiba SSM6K Silicon N-Channel Small Signal MOSFETs are designed with advanced technologies, achieving low RON characteristics. The SSM6K is very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

MOSFETs for Industrial and Lighting Applications: Toshiba 60V and 100V Power MOSFETs for Industrial and Lighting Applications include the 60V SSM3K341 and the 100V SSM3K361 families. These new MOSFETs feature industry-leading low on-resistance and are suited to load switching in television and industrial lighting. They are also good candidates for industrial automation systems require low to medium amounts of power.

SSM6 Low On-resistance MOSFET: Toshiba SSM6 Low On-resistance MOSFETs with high-speed switching operate as both power management switches and analog switches. These MOSFETs provide very low on-resistance as low as 1.1mΩ to a 115Ω maximum for different sets of gate to source voltage range. The SSM6 MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance and operate as DC to DC converters. The SSM6 MOSFETs drive a 1.2V minimum to 4.5V maximum gate voltage. These MOSFETs deliver less drain power dissipation up to 150mW producing less heat. The SM66 MOSFETs operate at 12V to 100V input voltage range.

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