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FDS6812A

FDS6812A
Mfr. #:
FDS6812A
Produttore:
ON Semiconductor
Descrizione:
MOSFET 2N-CH 20V 6.7A 8SOIC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDS6812A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Fairchild Semiconductor
categoria di prodotto
FET - Array
Serie
PowerTrenchR
Confezione
Nastro e bobina (TR)
Pacchetto-Custodia
8-SOIC (0.154", 3.90mm Width)
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Pacchetto-dispositivo-fornitore
8-SO
Tipo FET
2 N-Channel (Dual)
Potenza-Max
900mW
Drain-to-Source-Voltage-Vdss
20V
Ingresso-Capacità-Ciss-Vds
1082pF @ 10V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
6.7A
Rds-On-Max-Id-Vgs
22 mOhm @ 6.7A, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
Gate-Carica-Qg-Vgs
19nC @ 4.5V
Tags
FDS681, FDS68, FDS6, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2N-CH 20V 6.7A 8SOIC
*** Electronics
MOSFET S4966DY DUAL N-CHAN 20V 5.
***et
20V/12V, 22/35MO, NCH, DUAL, SO8, 240A GOX, PTI
***ser
MOSFETs SO-8
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parte # Mfg. Descrizione Azione Prezzo
FDS6812A
DISTI # FDS6812A-ND		ON SemiconductorMOSFET 2N-CH 20V 6.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDS6812AFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.7A I(D), 20V, 0.22ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		2140
    • 1000:$0.5400
    • 500:$0.5700
    • 100:$0.5900
    • 25:$0.6200
    • 1:$0.6600
    FDS6812A
    DISTI # 512-FDS6812A    		ON SemiconductorMOSFET SO-8
    RoHS: Compliant    		0
      FDS6812AFairchild Semiconductor Corporation6.7 A, 20 V, 0.22 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET1535
      • 434:$0.4125
      • 77:$0.4620
      • 1:$1.3200
      FDS6812AFairchild Semiconductor Corporation 2279
        FDS6812AFairchild Semiconductor Corporation 342
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          Mfr.#: FDS6984S-NL

          OMO.#: OMO-FDS6984S-NL-1190

          		 Nuovo e originale
          FDS6570A-CUT TAPE

          Mfr.#: FDS6570A-CUT TAPE

          OMO.#: OMO-FDS6570A-CUT-TAPE-1190

          		 Nuovo e originale
          Disponibilità
          Azione:
          Available
          Su ordine:
          4000
          Inserisci la quantità:
          Il prezzo attuale di FDS6812A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          0,62 USD
          0,62 USD
          10
          0,59 USD
          5,88 USD
          100
          0,56 USD
          55,69 USD
          500
          0,53 USD
          262,95 USD
          1000
          0,50 USD
          495,00 USD
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