FDP050AN06A0

Mfr. #:: FDP050AN06A0
Produttore:: ON Semiconductor / Fairchild
Descrizione:: MOSFET N-Channel PowerTrench
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FDP050AN06A0 Scheda dati
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Maggiori informazioni:: FDP050AN06A0 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: Foro passante

Pacchetto/custodia:: TO-220-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 60 V

Id - Corrente di scarico continua:: 80 A

Rds On - Resistenza Drain-Source:: 5 mOhms

Vgs - Tensione Gate-Source:: 20 V

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 245 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: PowerTrench

Confezione:: Tubo

Altezza:: 16.3 mm

Lunghezza:: 10.67 mm

Serie:: FDP050AN06A0

Tipo di transistor:: 1 N-Channel

Tipo:: MOSFET

Larghezza:: 4.7 mm

Marca:: ON Semiconductor / Fairchild

Tempo di caduta:: 29 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 160 ns

Quantità confezione di fabbrica:: 800

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 28 ns

Tempo di ritardo di accensione tipico:: 16 ns

Parte # Alias:: FDP050AN06A0_NL

Unità di peso:: 0.063493 oz

Tags: FDP050, FDP05, FDP0, FDP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
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FDP050AN06A0 Valutazioni e recensioni

E**r

It is not a real 2SK117.Drain current should not exceed 14mA (usually about 10mA), but the real measured values are more than a 20mA. So they are much more worse than a genuine.Refund received.

2019-06-23

Y***a

2019-06-05

FDP050AN06A0 Descrizione

***el Electronic: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220; PowerTrench®

***emi: N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ

***Yang: Trans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***ure Electronics: FDP050AN06A0 Series 60 V 80 A 5 mOhm N-Channel PowerTrench Mosfet - TO-220-3

***nell: MOSFET, N CH, 60V, 18A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P

***r Electronics: Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S

***ure Electronics: Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200

***ment14 APAC: MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 55 V 4.9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

***ment14 APAC: MOSFET, N, 55V, 150A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:4.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:600A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 150 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 4.9 / Gate-Source Voltage V = 20 / Fall Time ns = 82 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S

***ure Electronics: Single N-Channel 75 V 13 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 80V 82A 3-Pin(3+Tab) TO-220AB Tube

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:82A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 82 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 230

***ment14 APAC: MOSFET, N, 75V, 82A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:82A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:13mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: Power MOSFET, N-Channel, QFET®, 60 V, 85 A, 10 mΩ, TO-220

***ure Electronics: N-Channel 60 V 10 mO 160 W Flange Mount Mosfet - TO-220

***et Europe: Trans MOSFET N-CH 60V 85A 3-Pin(3+Tab) TO-220AB Rail

***r Electronics: Power Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:85A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Alternate Case Style:SOT-78B; Current, Idm Pulse:300A; Device Marking:FQP85N06; No. of Pins:3; Power Dissipation:160W; Power, Pd:160W; Resistance, Rds on Max:0.01ohm; Voltage, Vds Max:60V; Voltage, Vgs th Max:4V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***emi: N-Channel PowerTrench® MOSFET 75V, 80A, 6mΩ

***ure Electronics: N-Channel 75 V 6 mOhm Power Trench Mosfet - TO-220

***Yang: Trans MOSFET N-CH 75V 16A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***inecomponents.com: TO220AB, SINGLE, NCH, 75V, 0.0063 OHM POWERTRENCH MOSFET

***enic: 75V 16A 255W 6m´Î@10V80A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 80A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***eco: Transistor RFP70N06 N-Channel MOSFET 60 Volt 70 Amp TO-220AB

***ure Electronics: N-Channel 60 V 0.014 Ohm Flange Mount Power Mosfet - TO-220AB

***Yang: Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***emi: N-Channel Power MOSFET 60V, 70A, 14mΩ

***r Electronics: Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

FDP050AN06A0 Maggiori informazioni

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FDP050AN06A0 DISTI # 26637324	ON Semiconductor	FET 60V 5.0 MOHM TO220	1600	800:$1.3840
FDP050AN06A0 DISTI # 24246661	ON Semiconductor	FET 60V 5.0 MOHM TO220	1167	11:$0.9719
FDP050AN06A0 DISTI # FDP050AN06A0-ND	ON Semiconductor	MOSFET N-CH 60V 80A TO-220AB RoHS: Compliant Min Qty: 1 Container: Bulk	1724In Stock	1000:$1.2754 500:$1.5393 100:$1.8735 10:$2.3310 1:$2.5900
FDP050AN06A0 DISTI # V36:1790_06359183	ON Semiconductor	FET 60V 5.0 MOHM TO220	0	800000:$1.0280 400000:$1.0300 80000:$1.1540 8000:$1.3520 800:$1.3840
FDP050AN06A0 DISTI # FDP050AN06A0	ON Semiconductor	Trans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP050AN06A0) RoHS: Compliant Min Qty: 50 Container: Tube	Americas - 2625	500:$0.9649 250:$0.9899 150:$1.0029 100:$1.0159 50:$1.0219
FDP050AN06A0 DISTI # FDP050AN06A0	ON Semiconductor	Trans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP050AN06A0) RoHS: Compliant Min Qty: 1	Europe - 640	1000:€0.9039 500:€0.9379 100:€0.9739 50:€1.0129 25:€1.0549 10:€1.1509 1:€1.2659
FDP050AN06A0 DISTI # FDP050AN06A0	ON Semiconductor	Trans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP050AN06A0) RoHS: Compliant Min Qty: 256 Container: Bulk	Americas - 0	256:$1.1900 512:$1.1900 768:$1.1900 1280:$1.1900 2560:$1.1900
FDP050AN06A0 DISTI # 31Y1384	ON Semiconductor	MOSFET, N CH, 60V, 18A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	673	1000:$1.1200 500:$1.2800 100:$1.4600 10:$1.8400 1:$2.1600
FDP050AN06A0 DISTI # 512-FDP050AN06A0	ON Semiconductor	MOSFET N-Channel PowerTrench RoHS: Compliant	1343	1:$2.1400 10:$1.8200 100:$1.4500 500:$1.2700 1000:$1.0600
FDP050AN06A0_Q DISTI # 512-FDP050AN06A0_Q	ON Semiconductor	MOSFET N-Channel PowerTrench RoHS: Not compliant	0
FDP050AN06A0	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	26791	1000:$1.2900 500:$1.3600 100:$1.4100 25:$1.4700 1:$1.5900
FDP050AN06A0	Fairchild Semiconductor Corporation		30
FDP050AN06A0 DISTI # FDP050AN06A0	ON Semiconductor	Transistor: N-MOSFET,unipolar,60V,18A,245W,TO220AB	26	100:$2.1200 25:$2.3500 5:$2.9300 1:$3.4000
FDP050AN06A0	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	800
FDP050AN06A0 DISTI # 2454156	ON Semiconductor	MOSFET, N CH, 60V, 18A, TO-220AB-3 RoHS: Compliant	673	500:$1.9500 100:$2.2400 10:$2.8000 1:$3.2900
FDP050AN06A0 DISTI # 2454156	ON Semiconductor	MOSFET, N CH, 60V, 18A, TO-220AB-3	873	500:£0.9800 250:£1.0500 100:£1.1200 10:£1.4200 1:£1.8700

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Disponibilità

Azione:: Available
Su ordine:: 1984
Inserisci la quantità:

Il prezzo attuale di FDP050AN06A0 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,46 USD~~; ~~2,46 USD~~

10: ~~2,09 USD~~; ~~20,90 USD~~

100: ~~1,67 USD~~; ~~167,00 USD~~

500: ~~1,46 USD~~; ~~730,00 USD~~

1000: ~~1,21 USD~~; ~~1 210,00 USD~~

2500: ~~1,20 USD~~; ~~3 000,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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FDP050AN06A0

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

E**r

Y***a

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes