IRF1018ESPBF

IRF1018ESPBF
Mfr. #:
IRF1018ESPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF1018ESPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF1018ESPBF DatasheetIRF1018ESPBF Datasheet (P4-P6)IRF1018ESPBF Datasheet (P7-P9)IRF1018ESPBF Datasheet (P10-P11)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
79 A
Rds On - Resistenza Drain-Source:
7.1 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
46 nC
Pd - Dissipazione di potenza:
110 W
Configurazione:
Separare
Confezione:
Tubo
Altezza:
4.4 mm
Lunghezza:
10 mm
Tipo di transistor:
1 N-Channel
Larghezza:
9.25 mm
Marca:
Tecnologie Infineon
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Parte # Alias:
SP001561450
Unità di peso:
0.139332 oz
Tags
IRF1018ES, IRF1018, IRF101, IRF10, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;D2Pak;PD 110W;VGS +/-20
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:79A; On Resistance, Rds(on):8.4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
IRF1018ESPBF
DISTI # IRF1018ESPBF-ND
Infineon Technologies AGMOSFET N-CH 60V 79A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    IRF1018ESPBF
    DISTI # SP001561450
    Infineon Technologies AGTrans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK (Alt: SP001561450)
    RoHS: Compliant
    Min Qty: 1
    Europe - 50
    • 1:€1.3129
    • 10:€1.1219
    • 25:€1.1189
    • 50:€1.1169
    • 100:€0.8639
    • 500:€0.7579
    • 1000:€0.5969
    IRF1018ESPBF
    DISTI # 70017887
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 79A,D2Pak,PD 110W,VGS +/-20
    RoHS: Compliant
    0
    • 5:$2.0400
    IRF1018ESPBF
    DISTI # 942-IRF1018ESPBF
    Infineon Technologies AGMOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
    RoHS: Compliant
    91
    • 1:$1.5300
    • 10:$1.3100
    • 100:$1.0100
    • 500:$0.8860
    • 1000:$0.6990
    IRF1018ESPBFInternational Rectifier 
    RoHS: Not Compliant
    400
    • 1000:$0.4200
    • 500:$0.4400
    • 100:$0.4600
    • 25:$0.4800
    • 1:$0.5200
    IRF1018ESPBF
    DISTI # 6886803
    Infineon Technologies AGMOSFET N-CHANNEL 60V 79A HEXFET D2PAK, PK625
    • 5:£1.1860
    • 25:£0.9420
    • 50:£0.8360
    • 100:£0.7320
    IRF1018ESPBF
    DISTI # IRF1018ESPBF
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,79A,110W,D2PAK1
    • 1:$0.8100
    • 3:$0.7300
    • 10:$0.6000
    • 100:$0.5400
    IRF1018ESPBF
    DISTI # IRF1018ESPBF
    Infineon Technologies AGN-Ch 60V 79A 110W 0,0084R DPak
    RoHS: Compliant
    0
    • 10:€0.6710
    • 50:€0.4310
    • 200:€0.3710
    • 500:€0.3570
    IRF1018ESTRLPBF
    DISTI # IRF1018ESPBF-GURT
    Infineon Technologies AGN-Ch 60V 79A 110W 0,0084R DPak
    RoHS: Compliant
    860
    • 10:€0.6630
    • 50:€0.4230
    • 200:€0.3630
    • 500:€0.3495
    IRF1018ESPBF
    DISTI # 1602225
    Infineon Technologies AGMOSFET, N, D2-PAK
    RoHS: Compliant
    0
    • 1:$2.4300
    • 10:$2.0700
    • 100:$1.6000
    • 500:$1.4100
    • 1000:$1.1100
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    RC0603JR-07100RL

    Mfr.#: RC0603JR-07100RL

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    Mfr.#: RC1206JR-0710RL

    OMO.#: OMO-RC1206JR-0710RL

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    MAX98357AETE+T

    Mfr.#: MAX98357AETE+T

    OMO.#: OMO-MAX98357AETE-T-MAXIM-INTEGRATED

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    HCPL-3150-500E

    Mfr.#: HCPL-3150-500E

    OMO.#: OMO-HCPL-3150-500E-BROADCOM

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    IC COMPARATOR DIFF DUAL 8SOIC
    Disponibilità
    Azione:
    Available
    Su ordine:
    1985
    Inserisci la quantità:
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