SI2366DS-T1-GE3

SI2366DS-T1-GE3
Mfr. #:
SI2366DS-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 30V 5.8A SOT-23
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI2366DS-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SI2366DS-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
VISHAY
categoria di prodotto
FET - Single
Confezione
Bobina
Alias ​​parziali
SI2366DS-GE3
Unità di peso
0.050717 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SOT-23-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
2.1 W
Tempo di caduta
8 ns
Ora di alzarsi
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
5.8 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
30 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
14 ns
Tempo di ritardo all'accensione tipico
5 ns
Qg-Gate-Carica
6.4 nC
Transconduttanza diretta-Min
13 S
Tags
SI236, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descrizione Azione Prezzo
SI2366DS-T1-GE3
DISTI # V72:2272_09216818
Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
RoHS: Compliant
1932
  • 1000:$0.1655
  • 500:$0.2081
  • 250:$0.2557
  • 100:$0.2661
  • 25:$0.3533
  • 10:$0.3927
  • 1:$0.5087
SI2366DS-T1-GE3
DISTI # V36:1790_09216818
Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 300000:$0.1460
  • 3000:$0.1628
SI2366DS-T1-GE3
DISTI # SI2366DS-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 5.8A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
883In Stock
  • 1000:$0.1839
  • 500:$0.2379
  • 100:$0.3028
  • 10:$0.4060
  • 1:$0.4700
SI2366DS-T1-GE3
DISTI # SI2366DS-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 5.8A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
883In Stock
  • 1000:$0.1839
  • 500:$0.2379
  • 100:$0.3028
  • 10:$0.4060
  • 1:$0.4700
SI2366DS-T1-GE3
DISTI # SI2366DS-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 5.8A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 75000:$0.1330
  • 30000:$0.1344
  • 15000:$0.1417
  • 6000:$0.1522
  • 3000:$0.1628
SI2366DS-T1-GE3
DISTI # 32899058
Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
RoHS: Compliant
1932
  • 1000:$0.1779
  • 500:$0.2237
  • 250:$0.2749
  • 100:$0.2861
  • 46:$0.3798
SI2366DS-T1-GE3
DISTI # SI2366DS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R (Alt: SI2366DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1379
  • 18000:€0.1489
  • 12000:€0.1609
  • 6000:€0.1869
  • 3000:€0.2749
SI2366DS-T1-GE3
DISTI # SI2366DS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2366DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1279
  • 18000:$0.1309
  • 12000:$0.1349
  • 6000:$0.1409
  • 3000:$0.1449
SI2366DS-T1-GE3
DISTI # 99W9604
Vishay IntertechnologiesMOSFET Transistor, N Channel, 5.8 A, 30 V, 0.03 ohm, 10 V, 1.2 V0
  • 50000:$0.1290
  • 30000:$0.1350
  • 20000:$0.1450
  • 10000:$0.1550
  • 5000:$0.1680
  • 1:$0.1720
SI2366DS-T1-GE3
DISTI # 70459517
Vishay SiliconixSI2366DS-T1-GE3 N-channel MOSFET Transistor,5.8 A,30 V,3-Pin SOT-23
RoHS: Compliant
0
  • 3000:$0.3760
  • 6000:$0.3220
SI2366DS-T1-GE3
DISTI # 78-SI2366DS-T1-GE3
Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SOT-23
RoHS: Compliant
30176
  • 1:$0.4700
  • 10:$0.3610
  • 100:$0.2680
  • 500:$0.2200
  • 1000:$0.1700
  • 3000:$0.1540
  • 6000:$0.1440
  • 9000:$0.1350
SI2366DS-T1-GE3
DISTI # 8123132
Vishay IntertechnologiesTRANS MOSFET N-CH 30V 4.5A 3-PIN, PK1100
  • 3000:£0.1500
  • 1500:£0.1530
  • 600:£0.1660
  • 300:£0.2020
  • 20:£0.2810
SI2366DS-T1-GE3
DISTI # 8123132P
Vishay IntertechnologiesTRANS MOSFET N-CH 30V 4.5A 3-PIN, RL8880
  • 3000:£0.1500
  • 1500:£0.1530
  • 600:£0.1660
  • 300:£0.2020
SI2366DS-T1-GE3
DISTI # 2056680RL
Vishay IntertechnologiesMOSFET, N CH, W/D, 30V, 5.8A, SOT23
RoHS: Compliant
0
  • 1000:$0.2950
  • 500:$0.3830
  • 100:$0.5220
  • 10:$0.6970
  • 1:$0.8310
SI2366DS-T1-GE3
DISTI # 2056680
Vishay IntertechnologiesMOSFET, N CH, W/D, 30V, 5.8A, SOT23
RoHS: Compliant
0
  • 1000:$0.2950
  • 500:$0.3830
  • 100:$0.5220
  • 10:$0.6970
  • 1:$0.8310
Immagine Parte # Descrizione
SI2366DS-T1-GE3

Mfr.#: SI2366DS-T1-GE3

OMO.#: OMO-SI2366DS-T1-GE3

MOSFET 30V Vds 20V Vgs SOT-23
SI2366DS-T1-GE3

Mfr.#: SI2366DS-T1-GE3

OMO.#: OMO-SI2366DS-T1-GE3-VISHAY

MOSFET N-CH 30V 5.8A SOT-23
Disponibilità
Azione:
Available
Su ordine:
5500
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Il prezzo attuale di SI2366DS-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,19 USD
0,19 USD
10
0,18 USD
1,82 USD
100
0,17 USD
17,27 USD
500
0,16 USD
81,55 USD
1000
0,15 USD
153,50 USD
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