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NSVBC848CLT1G

NSVBC848CLT1G
Mfr. #:
NSVBC848CLT1G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NSVBC848CLT1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSVBC848CLT1G DatasheetNSVBC848CLT1G Datasheet (P4-P6)NSVBC848CLT1G Datasheet (P7-P9)NSVBC848CLT1G Datasheet (P10-P12)NSVBC848CLT1G Datasheet (P13)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-23-3
Polarità del transistor:
NPN
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
30 V
Collettore-tensione di base VCBO:
30 V
Emettitore-tensione di base VEBO:
5 V
Tensione di saturazione collettore-emettitore:
250 mV
Corrente massima del collettore CC:
100 mA
Guadagno larghezza di banda prodotto fT:
100 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
BC848CL
Guadagno di corrente CC hFE Max:
800 at 2 mA, 5 V
Confezione:
Bobina
Marca:
ON Semiconductor
Guadagno base/collettore DC hfe min:
420 at 2 mA, 5 V
Tipologia di prodotto:
BJT - Transistor bipolari
Qualificazione:
AEC-Q101
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Unità di peso:
0.000282 oz
Tags
NSVBC848, NSVBC84, NSVBC8, NSVBC, NSVB, NSV
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ca Corp
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
***ical
Trans GP BJT NPN 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
***ure Electronics
Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V
***emi
100 mA, 30 V, NPN Bipolar Junction Transistor
***enic
30V 300mW 100mA 520@2mA5V 100MHz 600mV@100mA5mA NPN -55¡Í~+150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
***itex
Transistor: NPN; bipolar; 30V; 0.1A; 225mW; -55+150 deg.C; SMD; SOT23
***p One Stop
Trans GP BJT NPN 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
***(Formerly Allied Electronics)
ON Semi BC848CLT1G NPN Bipolar Transistor, 0.1 A, 30 V, 3-Pin SOT-23 | ON Semiconductor BC848CLT1G
***roFlash
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
***ure Electronics
BC848CLT1G Series NPN 30 V 100 mA SMT General Purpose Transistor - SOT-23
***emi
100 mA, 30 V, NPN Bipolar Junction Transistor
***ment14 APAC
Transistor, NPN, 30V, 100MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power
***nell
TRANSISTOR, NPN, 30V, 100MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 100mA; DC Current Gain hFE: 420hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
***Yang
Trans GP BJT NPN 30V 0.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
***(Formerly Allied Electronics)
ON Semi BC848ALT1G NPN Bipolar Transistor, 0.1 A, 30 V, 3-Pin SOT-23 | ON Semiconductor BC848ALT1G
***roFlash
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
***ure Electronics
BC Series 30 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-23
***p One Stop
Trans GP BJT NPN 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
***nell
TRANS, BIPOL, NPN, 30V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: BCxxx Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
***trelec
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 150 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 600 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
***(Formerly Allied Electronics)
ON Semi BC848BLT1G NPN Bipolar Transistor; 0.1 A; 30 V; 3-Pin SOT-23
***enic
30V 300mW 100mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***SIT Distribution GmbH
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
***ure Electronics
BC848BLT1G Series NPN 30 V 100 mA SMT General Purpose Transistor - SOT-23
***p One Stop Global
Trans GP BJT NPN 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
***ment14 APAC
Transistor, NPN, 30V, 100MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power
***nell
TRANSISTOR, NPN, 30V, 100MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Operating Temperature Min: -55°C
***trelec
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 290 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 600 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
Parte # Mfg. Descrizione Azione Prezzo
NSVBC848CLT1G
DISTI # NSVBC848CLT1GOSCT-ND		ON SemiconductorTRANS NPN 30V 0.1A SOT23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		25809In Stock
  • 1000:$0.0383
  • 500:$0.0561
  • 100:$0.0912
  • 10:$0.1680
  • 1:$0.1800
NSVBC848CLT1G
DISTI # NSVBC848CLT1GOSDKR-ND		ON SemiconductorTRANS NPN 30V 0.1A SOT23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		25809In Stock
  • 1000:$0.0383
  • 500:$0.0561
  • 100:$0.0912
  • 10:$0.1680
  • 1:$0.1800
NSVBC848CLT1G
DISTI # NSVBC848CLT1GOSTR-ND		ON SemiconductorTRANS NPN 30V 0.1A SOT23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 150000:$0.0165
  • 75000:$0.0198
  • 30000:$0.0223
  • 15000:$0.0248
  • 6000:$0.0285
  • 3000:$0.0316
NSVBC848CLT1G
DISTI # NSVBC848CLT1G		ON SemiconductorTrans GP BJT NPN 30V 0.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: NSVBC848CLT1G)
RoHS: Compliant
Min Qty: 27000
Container: Reel		Americas - 0
  • 27000:$0.0154
  • 33000:$0.0153
  • 60000:$0.0151
  • 135000:$0.0149
  • 270000:$0.0146
NSVBC848CLT1G
DISTI # 92T2167		ON SemiconductorSS SOT23 GP XSTR NPN 30V / REEL0
  • 1:$0.1500
  • 50:$0.0850
  • 100:$0.0380
  • 250:$0.0370
  • 500:$0.0360
  • 1000:$0.0210
  • 12000:$0.0210
  • 24000:$0.0200
NSVBC848CLT1G
DISTI # 863-NSVBC848CLT1G		ON SemiconductorBipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V
RoHS: Compliant		31604
  • 1:$0.1700
  • 10:$0.1520
  • 100:$0.0540
  • 1000:$0.0360
  • 3000:$0.0280
  • 9000:$0.0240
  • 24000:$0.0220
  • 45000:$0.0190
NSVBC848CLT1GON Semiconductor 
RoHS: Not Compliant		471000
  • 100:$0.0100
  • 500:$0.0100
  • 1000:$0.0100
  • 1:$0.0200
  • 25:$0.0200
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Disponibilità
Azione:
Available
Su ordine:
1993
Inserisci la quantità:
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Prezzo di riferimento (USD)
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est. Prezzo
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0,17 USD
0,17 USD
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0,15 USD
1,52 USD
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0,05 USD
5,40 USD
1000
0,04 USD
36,00 USD
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