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FDMC7572S

FDMC7572S
Mfr. #:
FDMC7572S
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 25V 40A 3.2mOhm N-Ch PowerTrench SyncFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDMC7572S Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FDMC7572S maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
Power-33-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
25 V
Id - Corrente di scarico continua:
40 A
Rds On - Resistenza Drain-Source:
3.2 mOhms
Vgs th - Tensione di soglia gate-source:
1.7 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
52 W
Configurazione:
Separare
Nome depositato:
SyncFET
Confezione:
Bobina
Altezza:
0.8 mm
Lunghezza:
3.3 mm
Serie:
FDMC7572S
Tipo di transistor:
1 N-Channel
Larghezza:
3.3 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
122 S
Tempo di caduta:
3 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
3.6 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
26 ns
Tempo di ritardo di accensione tipico:
11 ns
Unità di peso:
0.001133 oz
Tags
FDMC75, FDMC7, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 25 V 0.00315 ohm Surface Mount PowerTrench SyncFET Mosfet Power 33
*** Stop Electro
Power Field-Effect Transistor, 22.5A I(D), 25V, 0.00315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:52W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ
***r Electronics
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 0.0031 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
*** Source Electronics
MOSFET N-CH 30V 50A PPAK SO-8 / Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO EP T/R
***ment14 APAC
MOSFET, N-CH, 30V, 50A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
FDMx75x PowerTrench® MOSFETs & SyncFETs™
ON Semiconductor FDMx757x PowerTrench® MOSFETs and SyncFETs™ combine exceptional performance and high efficiency. The FDMC7570S and FDMC7572S PowerTrench SyncFETs are designed to minimize switching losses in power conversion applications. These SyncFETs offer low ON-resistance, maintain excellent switching performance, and add the benefit of an efficient monolithic Schottky body diode. The FDMS7578 and FDMS75780 MOSFETs improve the overall efficiency and minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs are optimized for low gate charge, low on-resistance, fast switching speed, and body diode reverse recovery performance.
Parte # Mfg. Descrizione Azione Prezzo
FDMC7572S
DISTI # 26637111		ON SemiconductorPT7 25V/20V NCH POWERTRENCH SY18000
  • 3000:$0.9052
FDMC7572S
DISTI # 27073661		ON SemiconductorPT7 25V/20V NCH POWERTRENCH SY3000
  • 3000:$1.0296
FDMC7572S
DISTI # 19272842		ON SemiconductorPT7 25V/20V NCH POWERTRENCH SY1818
  • 123:$0.5112
FDMC7572S
DISTI # FDMC7572SCT-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMC7572S
    DISTI # FDMC7572SDKR-ND    		ON SemiconductorMOSFET N-CH 25V 40A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMC7572S
      DISTI # FDMC7572STR-ND      		ON SemiconductorMOSFET N-CH 25V 40A POWER33
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$1.2028
      FDMC7572S
      DISTI # C1S541901390905      		ON SemiconductorTrans MOSFET N-CH Si 25V 22.5A 8-Pin Power 33 T/R
      RoHS: Compliant      		3000
      • 3000:$1.2200
      FDMC7572S
      DISTI # FDMC7572S      		ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC7572S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$1.0119
      • 6000:$1.0089
      • 12000:$1.0059
      • 18000:$1.0029
      • 30000:$0.9999
      FDMC7572S
      DISTI # FDMC7572S      		ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R (Alt: FDMC7572S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Asia - 0
        FDMC7572S
        DISTI # FDMC7572S        		ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R (Alt: FDMC7572S)
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape and Reel        		Europe - 0
        • 3000:€1.4079
        • 6000:€1.1729
        • 12000:€1.0829
        • 18000:€1.0059
        • 30000:€0.9389
        FDMC7572S
        DISTI # 85W3144        		ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R - Product that comes on tape, but is not reeled (Alt: 85W3144)
        RoHS: Compliant
        Min Qty: 1
        Container: Ammo Pack        		Americas - 0
        • 1:$1.1800
        FDMC7572S
        DISTI # 92R5534        		ON SemiconductorMOSFET Transistor, N Channel, 40 A, 25 V, 0.0025 ohm, 10 V, 1.7 V RoHS Compliant: Yes0
        • 1:$1.0800
        • 9000:$1.0400
        FDMC7572S
        DISTI # 85W3144        		ON SemiconductorMOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:52WRoHS Compliant: Yes1818
        • 1:$0.4090
        • 25:$0.4090
        • 50:$0.4090
        • 100:$0.4090
        • 250:$0.4090
        • 500:$0.4090
        • 1000:$0.4090
        FDMC7572SON SemiconductorN-Channel 25 V 0.00315 ohm Surface Mount PowerTrench SyncFET Mosfet Power 33
        RoHS: Compliant        		3000Reel
        • 3000:$1.1600
        FDMC7572SFairchild Semiconductor CorporationPower Field-Effect Transistor, 22.5A I(D), 25V, 0.00315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
        RoHS: Compliant        		49729
        • 1000:$1.1800
        • 500:$1.2500
        • 100:$1.3000
        • 25:$1.3500
        • 1:$1.4600
        FDMC7572S
        DISTI # 2459641        		ON SemiconductorMOSFET, N CHANNEL, 25V, 0.0025OHM, 40A,
        RoHS: Compliant        		1818
        • 1:£2.1100
        • 25:£1.7900
        • 50:£1.6300
        • 100:£1.4400
        • 250:£1.3500
        FDMC7572S
        DISTI # XSFP00000096384        		Fairchild Semiconductor Corporation 
        RoHS: Compliant        		4038
        • 3000:$1.5500
        • 4038:$1.4500
        FDMC7572S
        DISTI # 2459641        		ON SemiconductorMOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8
        RoHS: Compliant        		1818
        • 3000:$3.2900
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        OMO.#: OMO-FDMC8321L

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        Mfr.#: FDMC86340

        OMO.#: OMO-FDMC86340

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        Mfr.#: FDMC86116LZ

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        Mfr.#: FDMC86106LZ

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        		 MOSFET N-CH 60V 56A POWER33
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        FDMC8015L-CUT TAPE

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        		 Nuovo e originale
        Disponibilità
        Azione:
        Available
        Su ordine:
        1984
        Inserisci la quantità:
        Il prezzo attuale di FDMC7572S è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        2,38 USD
        2,38 USD
        10
        2,02 USD
        20,20 USD
        100
        1,62 USD
        162,00 USD
        500
        1,41 USD
        705,00 USD
        1000
        1,17 USD
        1 170,00 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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