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IPS80R600P7AKMA1

IPS80R600P7AKMA1
Mfr. #:
IPS80R600P7AKMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 800V 8A TO251-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPS80R600P7AKMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IPS80R, IPS80, IPS8, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 600 mOhm 20 nC CoolMOS™ Power Mosfet - TO-251
***ical
800V CoolMOS P7 Power Transistor
***i-Key
MOSFET N-CH 800V 8A TO251-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 8A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.51Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.51ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 8A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.51ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
Parte # Mfg. Descrizione Azione Prezzo
IPS80R600P7AKMA1
DISTI # IPS80R600P7AKMA1-ND		Infineon Technologies AGMOSFET N-CH 800V 8A TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube		1480In Stock
  • 6000:$0.6759
  • 3000:$0.7097
  • 1500:$0.7604
  • 100:$1.1660
  • 25:$1.4196
  • 10:$1.4950
  • 1:$1.6700
IPS80R600P7AKMA1
DISTI # IPS80R600P7AKMA1		Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPS80R600P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube		Americas - 0
  • 15000:$0.6129
  • 9000:$0.6239
  • 6000:$0.6459
  • 3000:$0.6699
  • 1500:$0.6949
IPS80R600P7AKMA1
DISTI # 24AC9057		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.51ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes155
  • 1000:$0.7320
  • 500:$0.9270
  • 100:$1.0400
  • 10:$1.3600
  • 1:$1.6000
IPS80R600P7AKMA1
DISTI # 726-IPS80R600P7AKMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		222
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0300
  • 500:$0.9180
  • 1000:$0.7250
IPS80R600P7AKMA1
DISTI # 2771335		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-251
RoHS: Compliant		155
  • 1000:$1.2300
  • 500:$1.5500
  • 100:$1.9900
  • 10:$2.5200
  • 1:$2.8400
IPS80R600P7AKMA1
DISTI # 2771335		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-251175
  • 500:£0.7150
  • 250:£0.7580
  • 100:£0.8010
  • 25:£1.0500
  • 5:£1.1500
IPS80R600P7AKMA1
DISTI # XSKDRABV0021268		Infineon Technologies AG 
RoHS: Compliant		4500 in Stock0 on Order
  • 4500:$1.0112
  • 1500:$1.0835
Immagine Parte # Descrizione
IPS80R600P7AKMA1

Mfr.#: IPS80R600P7AKMA1

OMO.#: OMO-IPS80R600P7AKMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 800V 8A TO251-3
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di IPS80R600P7AKMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,92 USD
0,92 USD
10
0,87 USD
8,73 USD
100
0,83 USD
82,74 USD
500
0,78 USD
390,70 USD
1000
0,74 USD
735,50 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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