OMO ElectronicOMO Electronic
Expand menu
0 Carrello

IXFX360N15T2

IXFX360N15T2
Mfr. #:
IXFX360N15T2
Produttore:
Littelfuse
Descrizione:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFX360N15T2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXFX360N15T2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
FET - Single
Serie
GigaMOS
Prodotto
Driver del cancello MOSFET
Tipo
GigaMOS Trench T2 HiperFet
Confezione
Tubo
Stile di montaggio
Foro passante
Nome depositato
HiPerFET
Pacchetto-Custodia
PLUS-247
Temperatura di esercizio
-55°C ~ 175°C (TJ)
Tipo di montaggio
Foro passante
Pacchetto-dispositivo-fornitore
PLUS247-3
Numero di uscite
1
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
1670W
Drain-to-Source-Voltage-Vdss
150V
Ingresso-Capacità-Ciss-Vds
47500pF @ 25V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
360A (Tc)
Rds-On-Max-Id-Vgs
4 mOhm @ 60A, 10V
Vgs-th-Max-Id
5V @ 8mA
Gate-Carica-Qg-Vgs
715nC @ 10V
Pd-Power-Dissipazione
1670 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tensione di uscita
150 V
Corrente-Erogazione Operativa
100 A
Corrente di uscita
360 A
Tempo di caduta
265 ns
Ora di alzarsi
170 ns
Numero di conducenti
1 Driver
Tempo di ritardo allo spegnimento massimo
115 ns
Tempo massimo di ritardo all'accensione
50 ns
Tags
IXFX3, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
***i-Key
MOSFET N-CH 150V 360A PLUS247
***ure Electronics
150V 360A 0.004 Ohm N-Ch PLUS247 HiperFET
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Parte # Mfg. Descrizione Azione Prezzo
IXFX360N15T2
DISTI # V99:2348_15878492		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 500:$12.8800
  • 250:$14.6000
  • 100:$16.8000
  • 50:$17.2300
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
IXFX360N15T2
DISTI # IXFX360N15T2-ND		IXYS CorporationMOSFET N-CH 150V 360A PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 120:$18.3707
  • 30:$19.7660
  • 1:$23.2500
IXFX360N15T2
DISTI # 30695442		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
IXFX360N15T2
DISTI # 747-IXFX360N15T2		IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		73
  • 1:$24.3100
  • 5:$23.7600
  • 10:$22.4900
  • 25:$21.1400
  • 50:$19.5600
  • 100:$19.2100
  • 250:$16.3800
  • 500:$14.2700
IXFX360N15T2
DISTI # C1S331700117829		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
Immagine Parte # Descrizione
IXFX360N15T2

Mfr.#: IXFX360N15T2

OMO.#: OMO-IXFX360N15T2

 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFX360N10T

Mfr.#: IXFX360N10T

OMO.#: OMO-IXFX360N10T

 MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
IXFX360N15T2

Mfr.#: IXFX360N15T2

OMO.#: OMO-IXFX360N15T2-IXYS-CORPORATION

 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXFX360N10T

Mfr.#: IXFX360N10T

OMO.#: OMO-IXFX360N10T-IXYS-CORPORATION

 MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di IXFX360N15T2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
19,32 USD
19,32 USD
10
18,35 USD
183,54 USD
100
17,39 USD
1 738,80 USD
500
16,42 USD
8 211,00 USD
1000
15,46 USD
15 456,00 USD
Iniziare con
Prodotti più recenti
More Newest Products
Top