IXTY8N65X2

IXTY8N65X2
Mfr. #:
IXTY8N65X2
Produttore:
Littelfuse
Descrizione:
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTY8N65X2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXTY8N65X2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
8 A
Rds On - Resistenza Drain-Source:
500 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
12 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
150 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
HiPerFET
Confezione:
Tubo
Serie:
X2-Class
Marca:
IXYS
Transconduttanza diretta - Min:
4.8 S
Tempo di caduta:
24 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
28 ns
Quantità confezione di fabbrica:
70
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
53 ns
Tempo di ritardo di accensione tipico:
24 ns
Unità di peso:
0.081130 oz
Tags
IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET, N-CH, 650V, 8A, TO-252
***ark
Mosfet, N-Ch, 650V, 8A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.5Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Parte # Mfg. Descrizione Azione Prezzo
IXTY8N65X2
DISTI # V36:1790_15875934
IXYS CorporationTrans MOSFET N-CH 650V 8A 3-Pin(2+Tab) DPAK0
    IXTY8N65X2
    DISTI # IXTY8N65X2-ND
    IXYS CorporationMOSFET N-CH 650V 8A X2 TO-252
    RoHS: Compliant
    Min Qty: 70
    Container: Tube
    Temporarily Out of Stock
    • 70:$1.8000
    IXTY8N65X2
    DISTI # 747-IXTY8N65X2
    IXYS CorporationMOSFET
    RoHS: Compliant
    130
    • 1:$2.5600
    • 10:$2.3200
    • 25:$2.0200
    • 50:$1.8900
    • 100:$1.8600
    • 250:$1.5100
    • 500:$1.4500
    • 1000:$1.2000
    • 2500:$1.0100
    IXTY8N65X2
    DISTI # 9171498P
    IXYS CorporationN-CH X2 SERIES MOSFET 650V 8A TO-252, TU145
    • 500:£0.9260
    • 250:£1.0040
    • 100:£1.0840
    • 50:£1.3600
    IXTY8N65X2
    DISTI # IXTY8N65X2
    IXYS CorporationTransistor: N-MOSFET,X2-Class,unipolar,650V,8A,150W,TO252138
    • 70:$1.0600
    • 20:$1.1800
    • 5:$1.3300
    • 1:$1.4800
    IXTY8N65X2
    DISTI # 2674797
    IXYS CorporationMOSFET, N-CH, 650V, 8A, TO-252
    RoHS: Compliant
    17
    • 10:$2.0900
    • 1:$2.2300
    IXTY8N65X2
    DISTI # 2674797
    IXYS CorporationMOSFET, N-CH, 650V, 8A, TO-252
    RoHS: Compliant
    17
    • 500:£1.1300
    • 250:£1.1700
    • 100:£1.3800
    • 10:£1.4000
    • 1:£2.2500
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    OMO.#: OMO-53L0-SATEL-I1

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    IS61WV102416BLL-10TLI

    Mfr.#: IS61WV102416BLL-10TLI

    OMO.#: OMO-IS61WV102416BLL-10TLI-INTEGRATED-SILICON-SOLUTION

    SRAM 16M (1Mx16) 10ns Async SRAM 3.3v
    53L0-SATEL-I1

    Mfr.#: 53L0-SATEL-I1

    OMO.#: OMO-53L0-SATEL-I1-STMICROELECTRONICS

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    OMO.#: OMO-PTN78000AAH-TEXAS-INSTRUMENTS

    Non-Isolated DC/DC Converters 1.5A Wide Inp/ Neg Out Adj Module
    Disponibilità
    Azione:
    130
    Su ordine:
    2113
    Inserisci la quantità:
    Il prezzo attuale di IXTY8N65X2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,56 USD
    2,56 USD
    10
    2,32 USD
    23,20 USD
    25
    2,02 USD
    50,50 USD
    50
    1,89 USD
    94,50 USD
    100
    1,86 USD
    186,00 USD
    250
    1,51 USD
    377,50 USD
    500
    1,45 USD
    725,00 USD
    1000
    1,20 USD
    1 200,00 USD
    2500
    1,01 USD
    2 525,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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