AS4C32M16MD1A-5BCNTR

AS4C32M16MD1A-5BCNTR
Mfr. #:
AS4C32M16MD1A-5BCNTR
Produttore:
Alliance Memory
Descrizione:
DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AS4C32M16MD1A-5BCNTR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
AS4C32M16MD1A-5BCNTR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Memoria dell'Alleanza
Categoria di prodotto:
DRAM
RoHS:
Y
Tipo:
SDRAM Mobile - LPDDR1
Serie:
AS4C32M16MD1A
Confezione:
Bobina
Marca:
Memoria dell'Alleanza
Sensibile all'umidità:
Tipologia di prodotto:
DRAM
Quantità confezione di fabbrica:
2000
sottocategoria:
Memoria e archiviazione dati
Tags
AS4C32M16MD1A, AS4C32M16MD, AS4C32M16M, AS4C32M1, AS4C3, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    P***l
    P***l
    RU

    The order never came. Perhaps the delivery service is guilty. The seller did not resent returned the money in full volume.

    2019-04-03
    V***r
    V***r
    IN

    qty is ok . to be checked its performence

    2019-05-17
***metry Electronics
DDR 512MB 200MHz 400Mbps/pin 1.8V 32M x 16 60-ball FPBGA
***et
DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
***i-Key
IC DRAM 512M PARALLEL 60FBGA
Mobile DDR
Alliance Memory Mobile DDR is fabricated with high-performance CMOS technology. Mobile DDR uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O balls. The range of operating frequencies, programmable burst lengths, and programmable latencies allow the same device to be useful for a variety of high-bandwidth and high-performance memory system applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
AS4C32M16MD1A-5BCNTR
DISTI # AS4C32M16MD1A-5BCNTR-ND
Alliance Memory IncIC DRAM 512M PARALLEL 60FBGA
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$3.0492
AS4C32M16MD1A-5BCNTR
DISTI # AS4C32M16MD1A-5BCNTR
Alliance Memory IncDRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16 (Alt: AS4C32M16MD1A-5BCNTR)
RoHS: Compliant
Min Qty: 2000
Europe - 0
  • 20000:€2.3900
  • 12000:€2.5900
  • 8000:€2.7900
  • 4000:€2.8900
  • 2000:€2.9900
AS4C32M16MD1A-5BCNTR
DISTI # AS4C32M16MD1A-5BCNTR
Alliance Memory IncDRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16 - Tape and Reel (Alt: AS4C32M16MD1A-5BCNTR)
Min Qty: 2000
Container: Reel
Americas - 0
  • 20000:$2.1900
  • 12000:$2.2900
  • 8000:$2.3900
  • 4000:$2.4900
  • 2000:$2.5900
AS4C32M16MD1A-5BCN
DISTI # 913-4C32M16MD1A-5BCN
Alliance Memory IncDRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
RoHS: Compliant
67
  • 1:$4.3700
  • 10:$3.9600
  • 25:$3.8700
  • 50:$3.8500
  • 100:$3.4500
  • 250:$3.4400
  • 500:$3.3100
  • 1000:$3.0100
  • 2000:$2.8700
AS4C32M16MD1A-5BCNTR
DISTI # 913-32M16MD1A-5BCNTR
Alliance Memory IncDRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
RoHS: Compliant
0
  • 2000:$2.9400
AS4C32M16MD1A-5BCNTRAlliance Memory Inc512M32 X 16LPDDR11.8V60ball VFBGA 200mhz Tape and Reel4000
    Immagine Parte # Descrizione
    AS4C32M16MD1-5BINTR

    Mfr.#: AS4C32M16MD1-5BINTR

    OMO.#: OMO-AS4C32M16MD1-5BINTR

    DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
    AS4C32M16MD1A-5BCN

    Mfr.#: AS4C32M16MD1A-5BCN

    OMO.#: OMO-AS4C32M16MD1A-5BCN

    DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
    AS4C32M16MS-6BIN

    Mfr.#: AS4C32M16MS-6BIN

    OMO.#: OMO-AS4C32M16MS-6BIN

    DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
    AS4C32M16MD1A-5BIN

    Mfr.#: AS4C32M16MD1A-5BIN

    OMO.#: OMO-AS4C32M16MD1A-5BIN

    DRAM Mobile DDR, 512M 1.8V,200MHz,32M x 16
    AS4C32M16MD1-5BINTR

    Mfr.#: AS4C32M16MD1-5BINTR

    OMO.#: OMO-AS4C32M16MD1-5BINTR-ALLIANCE-MEMORY

    IC DRAM 512M PARALLEL 60FBGA
    AS4C32M16MD1A-5BCN

    Mfr.#: AS4C32M16MD1A-5BCN

    OMO.#: OMO-AS4C32M16MD1A-5BCN-ALLIANCE-MEMORY

    IC DRAM 512M PARALLEL 60FBGA
    AS4C32M16MD1A-5BCNTR

    Mfr.#: AS4C32M16MD1A-5BCNTR

    OMO.#: OMO-AS4C32M16MD1A-5BCNTR-ALLIANCE-MEMORY

    IC DRAM 512M PARALLEL 60FBGA
    AS4C32M16MSA-6BIN

    Mfr.#: AS4C32M16MSA-6BIN

    OMO.#: OMO-AS4C32M16MSA-6BIN-ALLIANCE-MEMORY

    IC DRAM 512M PARALLEL 54FBGA
    AS4C32M16MSA-6BINTR

    Mfr.#: AS4C32M16MSA-6BINTR

    OMO.#: OMO-AS4C32M16MSA-6BINTR-ALLIANCE-MEMORY

    IC DRAM 512M PARALLEL 54FBGA
    AS4C32M16MS-7BCN

    Mfr.#: AS4C32M16MS-7BCN

    OMO.#: OMO-AS4C32M16MS-7BCN-ALLIANCE-MEMORY

    IC DRAM 512M PARALLEL 54BGA
    Disponibilità
    Azione:
    Available
    Su ordine:
    4000
    Inserisci la quantità:
    Il prezzo attuale di AS4C32M16MD1A-5BCNTR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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