SI7272DP-T1-GE3

SI7272DP-T1-GE3
Mfr. #:
SI7272DP-T1-GE3
Produttore:
Vishay
Descrizione:
IGBT Transistors MOSFET 30V 25A 22W 9.3mohm @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI7272DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
SI7272DP-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Vishay Siliconix
categoria di prodotto
FET - Array
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SI7272DP-GE3
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PowerPAKR SO-8 Dual
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
PowerPAKR SO-8 Dual
Configurazione
Doppio doppio scarico
Tipo FET
2 N-Channel (Dual)
Potenza-Max
22W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
1100pF @ 15V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
25A
Rds-On-Max-Id-Vgs
9.3 mOhm @ 15A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Carica-Qg-Vgs
26nC @ 10V
Pd-Power-Dissipazione
3.6 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
10 ns
Ora di alzarsi
15 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
15 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.5 V
Rds-On-Drain-Source-Resistenza
9.3 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
22 ns
Tempo di ritardo all'accensione tipico
20 ns
Qg-Gate-Carica
17 nC
Modalità canale
Aumento
Tags
Si72, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Parte # Mfg. Descrizione Azione Prezzo
SI7272DP-T1-GE3
DISTI # V72:2272_09215638
Vishay IntertechnologiesTrans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R
RoHS: Compliant
134
  • 100:$0.8328
  • 25:$1.0344
  • 10:$1.0461
  • 1:$1.2245
SI7272DP-T1-GE3
DISTI # SI7272DP-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 30V 25A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3235In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SI7272DP-T1-GE3
DISTI # SI7272DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 30V 25A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3235In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SI7272DP-T1-GE3
DISTI # SI7272DP-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 30V 25A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.6622
SI7272DP-T1-GE3
DISTI # 28955593
Vishay IntertechnologiesTrans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R
RoHS: Compliant
134
  • 100:$0.8324
  • 25:$1.0339
  • 11:$1.0457
SI7272DP-T1-GE3
DISTI # SI7272DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R (Alt: SI7272DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI7272DP-T1-GE3
    DISTI # SI7272DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7272DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.6249
    • 6000:$0.6069
    • 12000:$0.5819
    • 18000:$0.5659
    • 30000:$0.5509
    SI7272DP-T1-GE3Vishay IntertechnologiesTrans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R - Tape and Reel
    RoHS: Compliant
    Container: Reel
    Americas - 0
      SI7272DP-T1-GE3
      DISTI # 01AC5004
      Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0076ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,RoHS Compliant: Yes3799
      • 1:$1.5100
      • 10:$1.2400
      • 25:$1.1400
      • 50:$1.0500
      • 100:$0.9510
      • 250:$0.8850
      • 500:$0.8180
      SI7272DP-T1-GE3
      DISTI # 15R5187
      Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 25A, POWERPAK SO-8, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0076ohm,Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes0
      • 1:$0.6020
      • 3000:$0.5870
      • 6000:$0.5720
      • 12000:$0.5510
      SI7272DP-T1-GE3.
      DISTI # 28AC2162
      Vishay IntertechnologiesDUAL N-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: YES0
      • 1:$0.6020
      • 3000:$0.5870
      • 6000:$0.5720
      • 12000:$0.5510
      SI7272DP-T1-GE3
      DISTI # 781-SI7272DP-GE3
      Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant
      233
      • 1:$1.5100
      • 10:$1.2400
      • 100:$0.9510
      • 500:$0.8180
      • 1000:$0.6450
      • 3000:$0.6020
      • 6000:$0.5720
      • 9000:$0.5510
      SI7272DP-T1-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 15A I(D), 30V, 0.0093OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET132
      • 61:$0.5880
      • 13:$0.8400
      • 1:$1.6800
      SI7272DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant
      Americas - 18000
        SI7272DP-T1-GE3
        DISTI # 2646391
        Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO
        RoHS: Compliant
        64
        • 5:£1.0300
        • 50:£0.9350
        • 100:£0.7190
        • 500:£0.6160
        • 1500:£0.5130
        SI7272DP-T1-GE3
        DISTI # 2646391
        Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO
        RoHS: Compliant
        3799
        • 1:$2.4000
        • 10:$1.9700
        • 100:$1.5100
        • 500:$1.3000
        • 1000:$1.0300
        • 3000:$0.9600
        SI7272DP-T1-GE3
        DISTI # 2679701
        Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO
        RoHS: Compliant
        0
        • 3000:$1.0600
        Immagine Parte # Descrizione
        SI7272DP-T1-GE3

        Mfr.#: SI7272DP-T1-GE3

        OMO.#: OMO-SI7272DP-T1-GE3

        MOSFET 30V Vds 20V Vgs PowerPAK SO-8
        SI7272DP-T1-GE3

        Mfr.#: SI7272DP-T1-GE3

        OMO.#: OMO-SI7272DP-T1-GE3-VISHAY

        IGBT Transistors MOSFET 30V 25A 22W 9.3mohm @ 10V
        Disponibilità
        Azione:
        Available
        Su ordine:
        2500
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        Prezzo di riferimento (USD)
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        Prezzo unitario
        est. Prezzo
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        0,83 USD
        0,83 USD
        10
        0,78 USD
        7,85 USD
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        74,37 USD
        500
        0,70 USD
        351,20 USD
        1000
        0,66 USD
        661,10 USD
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