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FCP067N65S3

FCP067N65S3
Mfr. #:
FCP067N65S3
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 650V 44A N-Channel SuperFET MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCP067N65S3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FCP067N65S3 DatasheetFCP067N65S3 Datasheet (P4-P6)FCP067N65S3 Datasheet (P7-P9)FCP067N65S3 Datasheet (P10-P11)
ECAD Model:
Maggiori informazioni:
FCP067N65S3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
44 A
Rds On - Resistenza Drain-Source:
67 mOhms
Vgs th - Tensione di soglia gate-source:
2.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
78 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
312 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
SuperFET III
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FCP067N65S3
Tipo di transistor:
1 N-Channel
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Tempo di caduta:
16 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
52 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
89 ns
Tempo di ritardo di accensione tipico:
26 ns
Unità di peso:
0.063493 oz
Tags
FCP06, FCP0, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-220
***Components
In a Tube of 800, N-Channel MOSFET, 44 A, 650 V, 3-Pin TO-220 ON Semiconductor FCP067N65S3
***ical
Trans MOSFET N-CH 650V 44A Tube
***et Europe
N-Channel SuperFET III MOSFET
***i-Key
SUPERFET3 650V 67 MOHM TO220 PKG
***ark
Mosfet, N-Ch, 650V, 44A, To-220-3L; Transistor Polarity:n Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.059Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 44A, TO-220-3L; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:312W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advancedtechnology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dtrate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency
***nell
MOSFET, CAN-N, 650V, 44A, TO-220-3L; Polarità Transistor:Canale N; Corrente Continua di Drain Id:44A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.059ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:312W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
SuperFET® III MOSFETs
ON Semiconductor SuperFET® III MOSFETs are high voltage (700V at TJ = 150ºC) super-junction (SJ) MOSFETs with charge balance technology. This technology provides outstanding low on-resistance (59mΩ or 62mΩ RDS(on) typical) and lower gate charge performance (78nC Qg typical). SuperFET III MOSFETs are designed to minimize conduction loss, offer superior switching performance, and withstand extreme rise rate of the drain-source voltage (dv/dt). Fairchild SuperFET III is ideal for various power systems for miniaturization and higher efficiency.
Parte # Mfg. Descrizione Azione Prezzo
FCP067N65S3
DISTI # V99:2348_16116286		ON SemiconductorSUPERFET3 650V 67 MOHM TO220 P651
  • 1000:$2.4650
  • 500:$2.8980
  • 250:$3.2020
  • 100:$3.4670
  • 10:$4.0000
  • 1:$5.1678
FCP067N65S3
DISTI # V36:1790_16116286		ON SemiconductorSUPERFET3 650V 67 MOHM TO220 P0
  • 800000:$2.0840
  • 400000:$2.0890
  • 80000:$2.7360
  • 8000:$4.0590
  • 800:$4.2900
FCP067N65S3
DISTI # FCP067N65S3-ND		ON SemiconductorMOSFET N-CH 650V 44A TO220
RoHS: Compliant
Min Qty: 1
Container: Bulk		283In Stock
  • 1000:$2.6303
  • 500:$3.1187
  • 100:$3.6636
  • 10:$4.4710
  • 1:$4.9800
FCP067N65S3
DISTI # 32444201		ON SemiconductorSUPERFET3 650V 67 MOHM TO220 P800
  • 800:$2.3871
FCP067N65S3
DISTI # 33695905		ON SemiconductorSUPERFET3 650V 67 MOHM TO220 P651
  • 3:$5.1678
FCP067N65S3
DISTI # FCP067N65S3		ON SemiconductorN-Channel SuperFET III MOSFET (Alt: FCP067N65S3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.9900
  • 500:€2.1900
  • 50:€2.2900
  • 100:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.7900
FCP067N65S3
DISTI # FCP067N65S3		ON SemiconductorN-Channel SuperFET III MOSFET - Rail/Tube (Alt: FCP067N65S3)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 3200:$2.1900
  • 4800:$2.1900
  • 8000:$2.1900
  • 800:$2.2900
  • 1600:$2.2900
FCP067N65S3
DISTI # 84Y5814		ON SemiconductorMOSFET, N-CH, 650V, 44A, TO-220-3L,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes796
  • 500:$4.5700
  • 250:$5.0000
  • 100:$5.2100
  • 50:$5.4300
  • 25:$5.6600
  • 10:$5.8800
  • 1:$6.7600
FCP067N65S3
DISTI # 512-FCP067N65S3		ON SemiconductorMOSFET 650V 44A N-Channel SuperFET MOSFET
RoHS: Compliant		3564
  • 1:$4.7300
  • 10:$4.0200
  • 100:$3.4800
  • 250:$3.3100
  • 500:$2.9700
  • 1000:$2.5600
FCP067N65S3
DISTI # 1723424		ON SemiconductorN-CHANNEL SUPERFET MOSFET 650V 44A TO220, TU2345
  • 1600:£2.3140
  • 800:£2.4690
FCP067N65S3
DISTI # 2565216		ON SemiconductorMOSFET, N-CH, 650V, 44A, TO-220-3L796
  • 500:£2.2600
  • 250:£2.5200
  • 100:£2.6600
  • 10:£3.0700
  • 1:£4.0200
FCP067N65S3
DISTI # 2565216		ON SemiconductorMOSFET, N-CH, 650V, 44A, TO-220-3L
RoHS: Compliant		796
  • 1000:$4.2200
  • 500:$4.9900
  • 100:$6.1700
  • 10:$7.5200
  • 1:$8.4100
FCP067N65S3ON Semiconductor 6300
  • 1:$6.6300
  • 100:$4.2400
  • 500:$3.4900
  • 1000:$3.2100
Immagine Parte # Descrizione
UCC24624DT

Mfr.#: UCC24624DT

OMO.#: OMO-UCC24624DT

 Gate Drivers UCC24624D
IRS2153DPBF

Mfr.#: IRS2153DPBF

OMO.#: OMO-IRS2153DPBF

 Gate Drivers Self-Osc Half Bridge Drvr 1.1us
NTP082N65S3F

Mfr.#: NTP082N65S3F

OMO.#: OMO-NTP082N65S3F

 MOSFET SF3 FRFET 650V 82MOHM
NTHL082N65S3F

Mfr.#: NTHL082N65S3F

OMO.#: OMO-NTHL082N65S3F

 MOSFET SUPERFET3 650V TO247 N-CHANNEL
C3D08065A

Mfr.#: C3D08065A

OMO.#: OMO-C3D08065A

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 650V, 8A
B32933B3105K000

Mfr.#: B32933B3105K000

OMO.#: OMO-B32933B3105K000

 Film Capacitors FILM CAP 0.56uF 10% 1250Vdc LS 27.5mm
IRS2153DPBF

Mfr.#: IRS2153DPBF

OMO.#: OMO-IRS2153DPBF-INFINEON-TECHNOLOGIES

 Gate Drivers Self-Osc Half Bridge Drvr 1.1us
NTHL082N65S3F

Mfr.#: NTHL082N65S3F

OMO.#: OMO-NTHL082N65S3F-ON-SEMICONDUCTOR

 SUPERFET3 650V TO247
NTP082N65S3F

Mfr.#: NTP082N65S3F

OMO.#: OMO-NTP082N65S3F-ON-SEMICONDUCTOR

 MOSFET N-CH 650V 82 MOHM TO220 P
B32932A3473K000

Mfr.#: B32932A3473K000

OMO.#: OMO-B32932A3473K000-EPCOS

 CAP, SUP, X2, PET, 0.047UF, 305V, RAD
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di FCP067N65S3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,73 USD
4,73 USD
10
4,02 USD
40,20 USD
100
3,48 USD
348,00 USD
250
3,31 USD
827,50 USD
500
2,97 USD
1 485,00 USD
1000
2,56 USD
2 560,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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