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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSC016N03LSGATMA1 DISTI # V36:1790_06383408 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 0 |
|
| BSC016N03LSGATMA1 DISTI # V72:2272_06383408 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 0 |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON8 Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON8 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON8 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC016N03LSGATMA1 DISTI # 34480780 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC016N03LSGATMA1 DISTI # 26195180 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 990 |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC016N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R - Bulk (Alt: BSC016N03LSGATMA1) RoHS: Compliant Min Qty: 511 Container: Bulk | Americas - 0 |
|
| BSC016N03LSGATMA1 DISTI # SP000237663 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R (Alt: SP000237663) Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSC016N03LSGATMA1. DISTI # 31AC8215 | Infineon Technologies AG | TRANSITIONAL MOSFETS ROHS COMPLIANT: YES RoHS: Compliant | 0 | |
| BSC016N03LSGATMA1 | Infineon Technologies AG | Single N-Channel 30 V 1.6 mOhm 98 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant Min Qty: 5000 | 5000Reel |
|
| BSC016N03LSGATMA1 DISTI # 726-BSC016N03LSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 4602 |
|
| BSC016N03LS G DISTI # 726-BSC016N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 556 |
|
| BSC016N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, N-Channel, MOSFET RoHS: Compliant | 11334 |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,100A,125W,PG-TDSON-8 | 3490 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSC016N03LS G OMO.#: OMO-BSC016N03LS-G |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC016N03MSGATMA1 OMO.#: OMO-BSC016N03MSGATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC016N03KSG OMO.#: OMO-BSC016N03KSG-1190 |
Nuovo e originale |
|
|
Mfr.#: BSC016N03LS OMO.#: OMO-BSC016N03LS-1190 |
Nuovo e originale |
|
|
Mfr.#: BSC016N03LSG OMO.#: OMO-BSC016N03LSG-1190 |
Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC016N03LSG , TDA18275A |
Nuovo e originale |
|
|
Mfr.#: BSC016N03LSGATMA1 , TDA1 |
Nuovo e originale |
|
|
Mfr.#: BSC016N03MS OMO.#: OMO-BSC016N03MS-1190 |
Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8 |
|
|
Mfr.#: BSC016N03MS G OMO.#: OMO-BSC016N03MS-G-1190 |
Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC016N03MS G) |
|
|
Mfr.#: BSC016N03LS G OMO.#: OMO-BSC016N03LS-G-128 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |