SI4362BDY-T1-GE3

SI4362BDY-T1-GE3
Mfr. #:
SI4362BDY-T1-GE3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET 30V 19.8A 6.6W 4.6mohm @ 10V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4362BDY-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SI4362BDY-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SI4362, SI436, SI43, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 30V 29A 8-SOIC
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descrizione Azione Prezzo
SI4362BDY-T1-GE3
DISTI # SI4362BDY-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 29A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4362BDY-T1-GE3
    DISTI # 781-SI4362BDY-GE3
    Vishay IntertechnologiesMOSFET 30V 19.8A 6.6W 4.6mohm @ 10V
    RoHS: Compliant
    0
    • 2500:$1.1700
    • 5000:$1.1200
    Immagine Parte # Descrizione
    SI4362BDY-T1-E3

    Mfr.#: SI4362BDY-T1-E3

    OMO.#: OMO-SI4362BDY-T1-E3

    MOSFET 30V 19.8A 6.6W
    SI4362BDY-T1-GE3

    Mfr.#: SI4362BDY-T1-GE3

    OMO.#: OMO-SI4362BDY-T1-GE3

    MOSFET 30V 19.8A 6.6W 4.6mohm @ 10V
    SI4362BDY-T1-E3

    Mfr.#: SI4362BDY-T1-E3

    OMO.#: OMO-SI4362BDY-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 30V 19.8A 6.6W
    SI4362BDY-T1-GE3

    Mfr.#: SI4362BDY-T1-GE3

    OMO.#: OMO-SI4362BDY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 30V 19.8A 6.6W 4.6mohm @ 10V
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di SI4362BDY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,68 USD
    1,68 USD
    10
    1,60 USD
    15,96 USD
    100
    1,51 USD
    151,20 USD
    500
    1,43 USD
    714,00 USD
    1000
    1,34 USD
    1 344,00 USD
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