SCT50N120

Mfr. #:: SCT50N120
Produttore:: STMicroelectronics
Descrizione:: MOSFET N-CH 1.2KV TO247-3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SCT50N120 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: SCT50N120 maggiori informazioni SCT50N120 Product Details

Attributo del prodotto
Valore attributo

Tags: SCT50, SCT5, SCT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCT50N120 Descrizione

***ure Electronics: N-Channel 1200 V 59 mO 122 nC Silicon Carbide Power Mosfet - HiP247

***ical: Trans MOSFET N-CH 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube

***et: Trans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube

***i-Key: MOSFET N-CH 1.2KV TO247-3

***ronik: SiC-N 1200V 69mOhm 65A HiP247

***ark: Mosfet, N-Ch, 1.2Kv, 65A, Hip247; Transistor Polarity:n Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.052Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 1.2KV, 65A, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Power Dissipation Pd:318W; Transistor Case Style:HiP247; No. of Pins:3Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CA-N, 1.2KV, 65A, HIP247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:65A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.052ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:318W; Modello Case Transistor:HiP247; No. di Pin:3Pin; Temperatura di Esercizio Max:200°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SCT50N120 DISTI # V36:1790_16518944	STMicroelectronics	Trans MOSFET N-CH 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube RoHS: Compliant	565	250:$25.0500 100:$25.9700 25:$29.1400 10:$31.3800 5:$34.6100 1:$34.9799
SCT50N120 DISTI # 497-16598-5-ND	STMicroelectronics	MOSFET N-CH 1.2KV TO247-3 Min Qty: 1 Container: Tube	575In Stock	100:$29.0472 25:$32.4872 10:$34.0160 1:$36.8800
SCT50N120 DISTI # 33368908	STMicroelectronics	Trans MOSFET N-CH 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube RoHS: Compliant	840	30:$31.0800
SCT50N120 DISTI # 34417802	STMicroelectronics	Trans MOSFET N-CH 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube RoHS: Compliant	600	3600:$23.5354 2400:$24.5421 1200:$25.7301 600:$26.9181
SCT50N120 DISTI # 33634615	STMicroelectronics	Trans MOSFET N-CH 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube RoHS: Compliant	565	250:$25.0500 100:$25.9700 25:$29.1400 10:$31.3800 5:$34.6100 1:$34.9799
SCT50N120 DISTI # SCT50N120	STMicroelectronics	Trans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCT50N120) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 600	6000:$23.1900 3600:$23.6900 2400:$24.7900 1200:$25.9900 600:$27.1900
SCT50N120 DISTI # SCT50N120	STMicroelectronics	Trans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube (Alt: SCT50N120) RoHS: Compliant Min Qty: 600 Container: Tube	Asia - 0
SCT50N120 DISTI # 97Y9495	STMicroelectronics	PTD WBG & POWER RF RoHS: Not Compliant	0	1:$22.7500
SCT50N120	STMicroelectronics	N-Channel 1200 V 59 mO 122 nC Silicon Carbide Power Mosfet - HiP247 RoHS: Compliant Min Qty: 1	1188Tube	120:$24.9200 90:$25.4000 60:$26.1000 1:$34.2800
SCT50N120 DISTI # 511-SCT50N120	STMicroelectronics	MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package RoHS: Compliant	916	1:$35.1300 5:$34.7600 10:$32.4000 25:$30.9500 100:$27.6700 250:$26.3900
SCT50N120 DISTI # SCT50N120	STMicroelectronics	Transistor: N-MOSFET,SiC,unipolar,1.2kV,50A,318W,HIP247™	90	30:$34.8600 10:$38.8500 3:$43.9400 1:$48.8100
SCT50N120 DISTI # 2849642	STMicroelectronics	MOSFET, N-CH, 1.2KV, 65A, HIP247 RoHS: Compliant	528	250:$39.7700 100:$41.7000 25:$46.6400 10:$48.8300 5:$52.3800 1:$52.9400
SCT50N120 DISTI # 2849642	STMicroelectronics	MOSFET, N-CH, 1.2KV, 65A, HIP247 RoHS: Compliant	528	100:£19.7000 50:£21.4100 10:£23.1100 5:£25.9600 1:£26.2300
SCT50N120 DISTI # XSKDRABV0050996	STMicroelectronics	TO247-3/N-Channel 1200V (1.2kV) 65A (Tc) 318W (Tc) Through Hole RoHS: Compliant	870 in Stock0 on Order	870:$34.3500 30:$36.8000
SCT50N120 DISTI # XSFP00000176485	STMicroelectronics	RoHS: Compliant	642 in Stock0 on Order	642:$29.6000 5:$31.7100
SCT50N120 DISTI # XSKDRABS0036466	STMicroelectronics	TO247-3/N-Channel 1200V (1.2kV) 65A (Tc) 318W (Tc) Through Hole RoHS: Compliant	1320 in Stock0 on Order	1320:$33.3100 30:$35.6900
SCT50N120 DISTI # TMOS1378	STMicroelectronics	SiC-N 1200V 69mOhm 65A HiP247 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	600:$27.4700
SCT50N120-7 DISTI # TMOS2203	STMicroelectronics	SiC-N 1200V 69mOhm 65A H2PAK-7 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$21.2500

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Disponibilità

Azione:: Available
Su ordine:: 2500
Inserisci la quantità:

Il prezzo attuale di SCT50N120 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~34,12 USD~~; ~~34,12 USD~~

10: ~~32,42 USD~~; ~~324,19 USD~~

100: ~~30,71 USD~~; ~~3 071,25 USD~~

500: ~~29,01 USD~~; ~~14 503,15 USD~~

1000: ~~27,30 USD~~; ~~27 300,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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SCT50N120

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes