SIR422DP-T1-GE3

Mfr. #:: SIR422DP-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET N-CH 40V 40A PPAK SO-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIR422DP-T1-GE3 Scheda dati
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: VISHAY

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SIR422DP-GE3

Unità di peso: 0.017870 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: PowerPAKR SO-8

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR SO-8

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 34.7W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 40V

Ingresso-Capacità-Ciss-Vds: 1785pF @ 20V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 40A (Tc)

Rds-On-Max-Id-Vgs: 6.6 mOhm @ 20A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Carica-Qg-Vgs: 48nC @ 10V

Pd-Power-Dissipazione: 34.7 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 40 A

Vds-Drain-Source-Breakdown-Voltage: 40 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 1.2 V to 2.5 V

Rds-On-Drain-Source-Resistenza: 6.6 mOhms

Polarità del transistor: Canale N

Qg-Gate-Carica: 16.1 nC

Transconduttanza diretta-Min: 70 S

Tags: SIR422DP-T, SIR422D, SIR422, SIR42, SIR4, SIR

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIR422DP-T1-GE3 DISTI # 30702864	Vishay Intertechnologies	Trans MOSFET N-CH 40V 20.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	3000	3000:$0.5443
SIR422DP-T1-GE3 DISTI # SIR422DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 40A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	20337In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SIR422DP-T1-GE3 DISTI # SIR422DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 40A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	20337In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SIR422DP-T1-GE3 DISTI # SIR422DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 40A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	18000In Stock	3000:$0.5236
SIR422DP-T1-GE3 DISTI # C1S803601001007	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	3000:$0.6430
SIR422DP-T1-GE3 DISTI # SIR422DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 20.5A 8-Pin PowerPAK SO T/R (Alt: SIR422DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 3000	3000:€0.9999 6000:€0.7169 12000:€0.5809 18000:€0.5139 30000:€0.4919
SIR422DP-T1-GE3 DISTI # SIR422DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 20.5A 8-Pin PowerPAK SO T/R (Alt: SIR422DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIR422DP-T1-GE3 DISTI # SIR422DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 20.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR422DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4479 6000:$0.4339 12000:$0.4169 18000:$0.4049 30000:$0.3939
SIR422DP-T1-GE3 DISTI # 05W6929	Vishay Intertechnologies	Trans MOSFET N-CH 40V 20.5A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 05W6929) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.4300 25:$1.1800 50:$1.0400 100:$0.9020 250:$0.8400 500:$0.7760 1000:$0.6120
SIR422DP-T1-GE3 DISTI # 05W6929	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 40A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:40V,On Resistance Rds(on):5400µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V , RoHS Compliant: Yes	0	1:$1.4300 25:$1.1800 50:$1.0400 100:$0.9020 250:$0.8400 500:$0.7760 1000:$0.6120
SIR422DP-T1-GE3 DISTI # 23T8476	Vishay Intertechnologies	MOSFET Transistor, N Channel, 40 A, 40 V, 5400 ohm, 10 V, 1.2 V , RoHS Compliant: Yes	2345	1:$1.1900 25:$0.9800 50:$0.8660 100:$0.7520 250:$0.7000 500:$0.6470 1000:$0.5100
SIR422DP-T1-GE3. DISTI # 26AC3305	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) MOSFET , ROHS COMPLIANT: YES	0	1:$0.4760 3000:$0.4650 6000:$0.4530 12000:$0.4360 18000:$0.4290 30000:$0.4220
SIR422DP-T1-GE3 DISTI # 70026400	Vishay Siliconix	MOSFET,Power,N-Ch,VDSS 40V,RDS(ON) 0.0054Ohm,ID 20A,PowerPak SO-8,-55de RoHS: Compliant	1976	1:$0.6300 25:$0.5900 100:$0.5600 250:$0.5400 500:$0.5200
SIR422DP-T1-GE3 DISTI # 781-SIR422DP-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	19551	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.6120 3000:$0.5670
SIR422DP-T1-GE3	Vishay Intertechnologies	SIR422 Series 40 V 0.0066 Ohm 48 nC Single N-Channel Power Mosfet POWERPAK-SO-8 RoHS: Compliant	27000Reel	3000:$0.6600
SIR422DP-T1-GE3	Vishay Intertechnologies	SIR422 Series 40 V 0.0066 Ohm 48 nC Single N-Channel Power Mosfet POWERPAK-SO-8 RoHS: Compliant	2750Cut Tape/Mini-Reel	1:$0.9200 250:$0.7850 500:$0.7700 750:$0.7650 1500:$0.7350
SIR422DP-T1-GE3	Vishay Intertechnologies	20.5 A, 40 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET	1318	297:$0.5400 75:$0.6750 1:$1.3500
SIR422DP-T1-GE3 DISTI # SIR422DP-GE3	Vishay Intertechnologies	N-Ch 40V 40A 5,0W 0,0066R PowerPakSO8 RoHS: Compliant	0	25:€0.6120 100:€0.5120 300:€0.4620 1000:€0.4450
SIR422DP-T1-GE3 DISTI # TMOSP10404	Vishay Intertechnologies	N-CH 40V 40A 6.6mOhm PPAK SO-8 RoHS: Compliant	Stock DE - 0Stock US - 0	6000:$0.5790
SIR422DP-T1-GE3.	Vishay Intertechnologies	MOSFET 40V 40A N-CH MOSFET	Americas - 2550	10:$0.8330 100:$0.6390 250:$0.5880 500:$0.5500 1000:$0.4710
SIR422DP-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs PowerPAK SO-8	Americas - 138000	3000:$0.4270 6000:$0.4040 12000:$0.3910 24000:$0.3850
SIR422DP-T1-GE3 DISTI # 2458563	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 40A, POWERPAK SO RoHS: Compliant	2999	1:$1.8800 10:$1.5600 100:$1.1900 500:$1.0300 1000:$0.8080 3000:$0.7530 6000:$0.7180 9000:$0.6900
SIR422DP-T1-GE3 DISTI # 1858994	Vishay Intertechnologies	MOSFET,N CH,DIODE,40V,40A,PPAKSO8 RoHS: Compliant	5344	1:$1.8800 10:$1.5600 100:$1.1900 500:$1.0300 1000:$0.8080 3000:$0.7530 6000:$0.7180 9000:$0.6900
SIR422DP-T1-GE3 DISTI # XSFP00000063575	Vishay Siliconix	RoHS: Compliant	24060	3000:$2.0000 24060:$1.8200
SIR422DP-T1-GE3 DISTI # 1858994	Vishay Intertechnologies	MOSFET,N CH,DIODE,40V,40A,PPAKSO8 RoHS: Compliant	24484	5:£0.8420 25:£0.7560 100:£0.5800 250:£0.5400 500:£0.5000

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SIR422DP-T1-GE3 OMO.#: OMO-SIR422DP-T1-GE3	MOSFET 40V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SIR422DP-T1-GE3-CUT TAPE OMO.#: OMO-SIR422DP-T1-GE3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SIR422DP OMO.#: OMO-SIR422DP-1190	Nuovo e originale
	Mfr.#: SIR422DP-T1-E3 OMO.#: OMO-SIR422DP-T1-E3-1190	Nuovo e originale
	Mfr.#: SIR422DP-T1-GE3 OMO.#: OMO-SIR422DP-T1-GE3-VISHAY	MOSFET N-CH 40V 40A PPAK SO-8

Disponibilità

Azione:: Available
Su ordine:: 5000
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Il prezzo attuale di SIR422DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,56 USD~~; ~~0,56 USD~~

10: ~~0,54 USD~~; ~~5,36 USD~~

100: ~~0,51 USD~~; ~~50,76 USD~~

500: ~~0,48 USD~~; ~~239,70 USD~~

1000: ~~0,45 USD~~; ~~451,20 USD~~

Iniziare con

SIR422DP-T 3
SIR422D 4
SIR422 6
SIR42 19
SIR4 130
SIR 693

SIR422DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes