ZXMN6A09DN8TA

ZXMN6A09DN8TA
Mfr. #:
ZXMN6A09DN8TA
Produttore:
Diodes Incorporated
Descrizione:
IGBT Transistors MOSFET Dl 60V N-Chnl UMOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
ZXMN6A09DN8TA Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
ZXMN6A09DN8TA maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Diodi incorporati
categoria di prodotto
FET - Array
Serie
ZXMN6A
Confezione
Confezione alternativa con nastro tagliato (CT)
Unità di peso
74 mg
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SOIC-8
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
8-SO
Configurazione
Doppio doppio scarico
Tipo FET
2 N-Channel (Dual)
Potenza-Max
1.25W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
60V
Ingresso-Capacità-Ciss-Vds
1407pF @ 40V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
4.3A
Rds-On-Max-Id-Vgs
40 mOhm @ 8.2A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Carica-Qg-Vgs
24.2nC @ 5V
Pd-Power-Dissipazione
2.1 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
4.6 ns
Ora di alzarsi
5 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
5.1 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistenza
40 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
25.3 ns
Tempo di ritardo all'accensione tipico
4.9 ns
Modalità canale
Aumento
Tags
ZXMN6A09DN8T, ZXMN6A09D, ZXMN6A09, ZXMN6A0, ZXMN6A, ZXMN6, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
ZXMN6A09 Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
***ical
Trans MOSFET N-CH 60V 5.6A Automotive 8-Pin SOIC T/R
***ied Electronics & Automation
MOSFET Dual N-Channel 60V 5.6A SOIC8
***ark
Mosfet Bvdss: 41V~60V So-8 T&r 0.5K Rohs Compliant: Yes
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Parte # Mfg. Descrizione Azione Prezzo
ZXMN6A09DN8TA
DISTI # V72:2272_06708106
Zetex / Diodes IncTrans MOSFET N-CH 60V 5.6A Automotive 8-Pin SOIC T/R
RoHS: Compliant
2
  • 1:$0.7811
ZXMN6A09DN8TA
DISTI # ZXMN6A09DN8TR-ND
Diodes IncorporatedMOSFET 2N-CH 60V 4.3A 8-SOIC
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
On Order
  • 500:$1.2750
ZXMN6A09DN8TA
DISTI # ZXMN6A09DN8CT-ND
Diodes IncorporatedMOSFET 2N-CH 60V 4.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 100:$1.5296
  • 10:$1.9030
  • 1:$2.1100
ZXMN6A09DN8TA
DISTI # ZXMN6A09DN8DKR-ND
Diodes IncorporatedMOSFET 2N-CH 60V 4.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 100:$1.5296
  • 10:$1.9030
  • 1:$2.1100
ZXMN6A09DN8TA
DISTI # ZXMN6A09DN8TA
Diodes IncorporatedTrans MOSFET N-CH 60V 5.6A 8-Pin SOIC T/R (Alt: ZXMN6A09DN8TA)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel
Europe - 0
  • 500:€0.4119
  • 1000:€0.3919
  • 2000:€0.3859
  • 3000:€0.3799
  • 5000:€0.3629
ZXMN6A09DN8TA
DISTI # ZXMN6A09DN8TA
Diodes IncorporatedTrans MOSFET N-CH 60V 5.6A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMN6A09DN8TA)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$0.5029
  • 1000:$0.4789
  • 2000:$0.4559
  • 3000:$0.4359
  • 5000:$0.4259
ZXMN6A09DN8TA
DISTI # 70438838
Diodes IncorporatedMOSFET Dual N-Channel 60V 5.6A SOIC8
RoHS: Compliant
0
  • 10:$1.8200
  • 40:$1.5900
  • 100:$1.4200
  • 200:$1.2700
ZXMN6A09DN8TA
DISTI # 522-ZXMN6A09DN8TA
Diodes IncorporatedMOSFET Dl 60V N-Chnl UMOS
RoHS: Compliant
0
  • 500:$1.0600
ZXMN6A09DN8TAZetex / Diodes Inc3900 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET573
  • 268:$0.6500
  • 49:$0.7500
  • 1:$2.5000
ZXMN6A09DN8TAZetex / Diodes Inc 695
  • 3:$1.8750
  • 12:$1.2188
  • 43:$0.7031
  • 144:$0.6000
  • 310:$0.5250
ZXMN6A09DN8TAZetex / Diodes Inc 249
  • 3:$1.8750
  • 12:$1.2188
  • 43:$0.7031
  • 144:$0.6000
ZXMN6A09DN8TAZetex / Diodes Inc 12595
    Immagine Parte # Descrizione
    ZXMN6A07F

    Mfr.#: ZXMN6A07F

    OMO.#: OMO-ZXMN6A07F-1190

    Nuovo e originale
    ZXMN6A07ZTA

    Mfr.#: ZXMN6A07ZTA

    OMO.#: OMO-ZXMN6A07ZTA-DIODES

    MOSFET N-CH 60V 1.9A SOT-89
    ZXMN6A08E6QTA

    Mfr.#: ZXMN6A08E6QTA

    OMO.#: OMO-ZXMN6A08E6QTA-DIODES

    MOSFET 60V N-CH ENH FET 20VGS 80MOHM MOSFET N-CH 60V 2.8A SOT23-6
    ZXMN6A25KTC

    Mfr.#: ZXMN6A25KTC

    OMO.#: OMO-ZXMN6A25KTC-DIODES

    Trans MOSFET N-CH 60V 10.7A Automotive 3-Pin(2+Tab) DPAK T/R
    ZXMN6A07FTA-CUT TAPE

    Mfr.#: ZXMN6A07FTA-CUT TAPE

    OMO.#: OMO-ZXMN6A07FTA-CUT-TAPE-1190

    Nuovo e originale
    ZXMN6A09DN8TA-CUT TAPE

    Mfr.#: ZXMN6A09DN8TA-CUT TAPE

    OMO.#: OMO-ZXMN6A09DN8TA-CUT-TAPE-1190

    Nuovo e originale
    ZXMN6A09GTA-CUT TAPE

    Mfr.#: ZXMN6A09GTA-CUT TAPE

    OMO.#: OMO-ZXMN6A09GTA-CUT-TAPE-1190

    Nuovo e originale
    ZXMN6A25DN8TA-CUT TAPE

    Mfr.#: ZXMN6A25DN8TA-CUT TAPE

    OMO.#: OMO-ZXMN6A25DN8TA-CUT-TAPE-1190

    Nuovo e originale
    ZXMN6A11GTA

    Mfr.#: ZXMN6A11GTA

    OMO.#: OMO-ZXMN6A11GTA-DIODES

    Darlington Transistors MOSFET 60V N-Chnl UMOS
    ZXMN6A11Z

    Mfr.#: ZXMN6A11Z

    OMO.#: OMO-ZXMN6A11Z-1190

    Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di ZXMN6A09DN8TA è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,64 USD
    0,64 USD
    10
    0,61 USD
    6,07 USD
    100
    0,58 USD
    57,50 USD
    500
    0,54 USD
    271,50 USD
    1000
    0,51 USD
    511,10 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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