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IRF5NJ6215

IRF5NJ6215
Mfr. #:
IRF5NJ6215
Produttore:
Infineon Technologies AG
Descrizione:
Trans MOSFET P-CH 150V 11A 3-Pin SMD-0.5 - Bulk (Alt: IRF5NJ6215)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF5NJ6215 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IRF5NJ, IRF5N, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***ernational Rectifier
-150V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
***et
Trans MOSFET P-CH 150V 11A 3-Pin SMD-0.5
***(Formerly Allied Electronics)
HEXFET, Hi-Rel, Gen 5 -150V, 13A, 0.290 ohm
***eco
Transistor MOSFET P Channel 100 Volt 13 Amp 3 Pin 2+ Tab Dpak
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -100V, 13A, 205 mOhm, 38.7 nC Qg, D-Pak
***ure Electronics
Single P-Channel 100V 0.205 Ohm 58 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; On Resistance Rds(On):0.205Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***et
Trans MOSFET P-CH -150V, -13A, 295mOHM, 3-Pin(2+Tab) DPAK, Tube
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -150V, 13A, 580 mOhm, 44 nC Qg, D-Pak
***fin
Transistor PNP Mos IRFR6215 INTERNATIONAL RECTIFIER Ampere=13 V=150 TO252/DPAK
***ure Electronics
Single P-Channel 150V 0.295 Ohm 66 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
MOSFET, P-CH, -150V, -13A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Source Voltage Vds:-150V; On Resistance
***roFlash
Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***nell
MOSFET, P-CH, -150V, -13A, TO-252AA; Transistor Polarity: P Channel; Continuous Drain Current Id: -13A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.295ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
IRF8714PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC
***roFlash
Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET® Power Mosfet - SOIC-8
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P
***(Formerly Allied Electronics)
IRF644SPBF N-channel MOSFET Transistor; 14 A; 250 V; 3-Pin D2PAK
***ical
Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) D2PAK
***ure Electronics
IRF644S Series N-Channel 250 V 280 mOhm Surface Mount Power Mosfet - TO-263
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.28Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 14 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 20 / Fall Time ns = 49 / Rise Time ns = 24 / Turn-OFF Delay Time ns = 53 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = DDPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 125
***ure Electronics
Single N-Channel 30 V 0.0079 Ohms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R
*** Stop Electro
Small Signal Field-Effect Transistor, 19.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:19.3A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
***nell
MOSFET,N CH,30V,19.3A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 19.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015); Current Id Max: 13.6A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
*** Source Electronics
MOSFET P-CH 30V 19.7A 8-SOIC / Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R
***ure Electronics
SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8
***ment14 APAC
MOSFET, P-CH, 30V, 19.7A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19.7A; Power Dissipation Pd:5.7W; Voltage Vgs Max:20V
Parte # Mfg. Descrizione Azione Prezzo
IRF5NJ6215
DISTI # IRF5NJ6215		Infineon Technologies AGTrans MOSFET P-CH 150V 11A 3-Pin SMD-0.5 - Bulk (Alt: IRF5NJ6215)
RoHS: Not Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$105.3900
  • 10:$103.8900
  • 25:$102.3900
  • 50:$100.0900
  • 100:$91.1900
  • 500:$81.7900
  • 1000:$80.3900
IRF5NJ6215SCV
DISTI # IRF5NJ6215SCV		Infineon Technologies AGTrans MOSFET P-CH 150V 11A 3-Pin SMD-0.5 TXV Level Screening - Bulk (Alt: IRF5NJ6215SCV)
RoHS: Not Compliant
Min Qty: 50
Container: Bulk		Americas - 0
  • 50:$152.1900
  • 52:$146.6900
  • 102:$133.8900
  • 250:$123.2900
  • 500:$121.0900
IRF5NJ6215SCX
DISTI # IRF5NJ6215SCX		Infineon Technologies AGTrans MOSFET P-CH 150V 11A 3-Pin SMD-0.5 TX Level Screening - Bulk (Alt: IRF5NJ6215SCX)
RoHS: Not Compliant
Min Qty: 50
Container: Bulk		Americas - 0
  • 50:$134.6900
  • 52:$129.7900
  • 102:$118.3900
  • 250:$108.6900
  • 500:$106.7900
Immagine Parte # Descrizione
IRF5N3205SCV

Mfr.#: IRF5N3205SCV

OMO.#: OMO-IRF5N3205SCV-1190

 Trans MOSFET N-CH 55V 55A 3-Pin SMD-1 TXV Level Screening - Bulk (Alt: IRF5N3205SCV)
IRF5N3315

Mfr.#: IRF5N3315

OMO.#: OMO-IRF5N3315-1190

 Nuovo e originale
IRF5N3415

Mfr.#: IRF5N3415

OMO.#: OMO-IRF5N3415-1190

 Trans MOSFET N-CH 150V 37.5A 3-Pin SMD-1 - Bulk (Alt: IRF5N3415)
IRF5N3710

Mfr.#: IRF5N3710

OMO.#: OMO-IRF5N3710-1190

 Nuovo e originale
IRF5N5210

Mfr.#: IRF5N5210

OMO.#: OMO-IRF5N5210-1190

 Trans MOSFET P-CH Si 100V 31A 3-Pin SMD-1
IRF5NJ3315

Mfr.#: IRF5NJ3315

OMO.#: OMO-IRF5NJ3315-1190

 Trans MOSFET N-CH 150V 20A 3-Pin SMD-0.5 - Bulk (Alt: IRF5NJ3315)
IRF5NJ5305

Mfr.#: IRF5NJ5305

OMO.#: OMO-IRF5NJ5305-1190

 Trans MOSFET P-CH 55V 22A 3-Pin SMD-0.5 - Bulk (Alt: IRF5NJ5305)
IRF5NJ5305SCX

Mfr.#: IRF5NJ5305SCX

OMO.#: OMO-IRF5NJ5305SCX-1190

 Trans MOSFET P-CH Si 55V 22A 3-Pin SMD-0.5
IRF5NJ540

Mfr.#: IRF5NJ540

OMO.#: OMO-IRF5NJ540-1190

 Trans MOSFET N-CH 100V 22A 3-Pin SMD-0.5 - Bulk (Alt: IRF5NJ540)
IRF5NJ540SCV

Mfr.#: IRF5NJ540SCV

OMO.#: OMO-IRF5NJ540SCV-1190

 Trans MOSFET N-CH Si 100V 22A 3-Pin SMD-0.5
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di IRF5NJ6215 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
120,58 USD
120,58 USD
10
114,56 USD
1 145,56 USD
100
108,53 USD
10 852,65 USD
500
102,50 USD
51 248,65 USD
1000
96,47 USD
96 468,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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