IRF640NSTRLPBF

Mfr. #:: IRF640NSTRLPBF
Produttore:: Infineon Technologies
Descrizione:: MOSFET MOSFT 200V 18A 150mOhm 44.7nC
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IRF640NSTRLPBF Scheda dati
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HTML Datasheet:: IRF640NSTRLPBF Datasheet IRF640NSTRLPBF Datasheet (P4-P6)IRF640NSTRLPBF Datasheet (P7-P9)IRF640NSTRLPBF Datasheet (P10-P11)
ECAD Model:
Maggiori informazioni:: IRF640NSTRLPBF maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263AB-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 200 V

Id - Corrente di scarico continua:: 18 A

Rds On - Resistenza Drain-Source:: 150 mOhms

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 44.7 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 150 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Altezza:: 2.3 mm

Lunghezza:: 6.5 mm

Tipo di transistor:: 1 N-Channel

Larghezza:: 6.22 mm

Marca:: Tecnologie Infineon

Transconduttanza diretta - Min:: 6.8 S

Tempo di caduta:: 5.5 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 19 ns

Quantità confezione di fabbrica:: 800

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 23 ns

Tempo di ritardo di accensione tipico:: 10 ns

Parte # Alias:: SP001561810

Unità di peso:: 0.070548 oz

Tags: IRF640NSTRLP, IRF640NSTRL, IRF640NST, IRF640NS, IRF640N, IRF640, IRF64, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF640NSTRLPBF Descrizione

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55

***ure Electronics: Single N-Channel 200 V 0.15 Ohm 67nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 200V 18A D2PAK

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***eco: IRF640NSTRRPBF,MOSFET, 200V, 1 8A, 150 MOHM, 44.7 NC QG, D2-

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 150W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 18A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 72A; SMD Marking: IRF640NS; Termination Type: Surface Mount Device; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs th Max: 4V

IRF640NSTRLPBF Maggiori informazioni

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IRF640NSTRLPBF DISTI # V72:2272_13890582	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	314	250:$0.6102 100:$0.8026 25:$0.9824 10:$0.9866 1:$1.1117
IRF640NSTRLPBF DISTI # IRF640NSTRLPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 200V 18A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4651In Stock	100:$1.1972 10:$1.5150 1:$1.7100
IRF640NSTRLPBF DISTI # IRF640NSTRLPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 18A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4651In Stock	100:$1.1972 10:$1.5150 1:$1.7100
IRF640NSTRLPBF DISTI # IRF640NSTRLPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 200V 18A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	4000In Stock	800:$0.7875
IRF640NSTRLPBF DISTI # 29754097	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1600	8000:$0.4204 4800:$0.4281 3200:$0.4425 1600:$0.4597 800:$0.4770
IRF640NSTRLPBF DISTI # 30609400	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	676	21:$1.2175
IRF640NSTRLPBF DISTI # 30345176	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	314	250:$0.6102 100:$0.8026 25:$0.9824 14:$0.9866
IRF640NSTRLPBF DISTI # SP001561810	Infineon Technologies AG	Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001561810) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 105600	800:€0.5599 1600:€0.4579 3200:€0.4199 4800:€0.3869 8000:€0.3599
IRF640NSTRLPBF DISTI # IRF640NSTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF640NSTRLPBF) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$0.4969 1600:$0.4789 3200:$0.4609 4800:$0.4459 8000:$0.4379
IRF640NSTRLPBF DISTI # IRF640NSTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF640NSTRLPBF) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Asia - 0
IRF640NSTRLPBF DISTI # 42Y0392	Infineon Technologies AG	MOSFET Transistor, N Channel, 18 A, 200 V, 0.15 ohm, 10 V, 4 V RoHS Compliant: Yes	3754	1:$1.5900 10:$1.3800 25:$1.2800 50:$1.1800 100:$1.0700 250:$1.0200 500:$0.9590
IRF640NSTRLPBF. DISTI # 26AC0608	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:150W,No. of Pins:3Pins RoHS Compliant: Yes	0
IRF640NSTRLPBF DISTI # 70017430	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.15Ohm,ID 18A,D2Pak,PD 150W,VGS +/-20V,-55 RoHS: Compliant	326	1:$2.4650 10:$2.1750 100:$1.8960 500:$1.6430 1000:$1.4500
IRF640NSTRLPBF DISTI # 942-IRF640NSTRLPBF	Infineon Technologies AG	MOSFET MOSFT 200V 18A 150mOhm 44.7nC RoHS: Compliant	2623	1:$1.4200 10:$1.2100 100:$0.9280 500:$0.8200 800:$0.6470 2400:$0.5740
IRF640NSTRLPBF	Infineon Technologies AG	Single N-Channel 200V 0.15 Ohm 67 nC HEXFET Power Mosfet - D2PAK RoHS: Compliant	800Reel	800:$0.5150 1600:$0.4950
IRF640NSTRLPBF	International Rectifier	18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	124	68:$0.7500 18:$0.9000 1:$1.5000
IRF640NSTRLPBF DISTI # 8312853	Infineon Technologies AG	HEXFET N-CH MOSFET 18A 200V D2PAK, PK	330	10:£0.8140 100:£0.5940 200:£0.5640 400:£0.5340 800:£0.4140
IRF640NSTRLPBF DISTI # 8312853P	Infineon Technologies AG	HEXFET N-CH MOSFET 18A 200V D2PAK, RL	1020	100:£0.5940 200:£0.5640 400:£0.5340 800:£0.4140
IRF640NSTRLPBF DISTI # IRF640NSTRLPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,200V,18A,150W,D2PAK	811	1:$0.7412 3:$0.6264 10:$0.5285 100:$0.4774
IRF640NSTRLPBF DISTI # IRF640NSPBF-GURT	Infineon Technologies AG	N-Ch 200V 18A 150W 0,15R DPak RoHS: Compliant	950	10:€0.6580 50:€0.4180 200:€0.3580 500:€0.3450
IRF640NSTRLPBF DISTI # TMOSP11839	Infineon Technologies AG	N-CH 200V 18A 150mOhm D2PAK RoHS: Compliant	Stock DE - 800Stock US - 0	800:$0.6442 1600:$0.6073 3200:$0.5705 4800:$0.5153 8000:$0.4969
IRF640NSTRLPBF		INSTOCK	1600
IRF640NSTRLPBF	Infineon Technologies AG	INSTOCK	602
IRF640NSTRLPBF	Infineon Technologies AG	200V,150m,18A,N-Channel Power MOSFET	500	1:$0.9600 100:$0.8000 500:$0.7100 1000:$0.6900
IRF640NSTRLPBF DISTI # XSKDRABV0021364	INF	RoHS: Compliant	800	800:$0.8182
IRF640NSTRLPBF DISTI # XSLY00000000766	INFINEON/IR	D2-PAK (TO-263) RoHS: Compliant	6336	1600:$0.4714 6336:$0.4400
IRF640NSTRLPBF DISTI # 2467995	Infineon Technologies AG	MOSFET, N CH, 200V, 18A, TO-263AB-3 RoHS: Compliant	554	1:$2.2500 10:$1.9200 100:$1.4700 500:$1.3100 800:$1.0300 2400:$0.9090
IRF640NSTRLPBF DISTI # 2467995RL	Infineon Technologies AG	MOSFET, N CH, 200V, 18A, TO-263AB-3 RoHS: Compliant	0	1:$2.2500 10:$1.9200 100:$1.4700 500:$1.3100 800:$1.0300 2400:$0.9090
IRF640NSTRLPBF DISTI # C1S327400103628	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	839	200:$0.6390 100:$0.7250 50:$0.8570 10:$1.0400 1:$2.0500
IRF640NSTRLPBF DISTI # C1S322000481499	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	676	100:$0.4900 50:$0.5310 10:$0.7890 5:$0.9740
IRF640NSTRLPBF DISTI # C1S322000481480	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	314	250:$0.6102 100:$0.8026 25:$0.9824 10:$0.9866
IRF640NSTRLPBF DISTI # 2467995	Infineon Technologies AG	MOSFET, N CH, 200V, 18A, TO-263AB-3 RoHS: Compliant	3854	5:£0.8300 25:£0.7030 100:£0.5750 250:£0.5450 500:£0.4220

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Disponibilità

Azione:: Available
Su ordine:: 1985
Inserisci la quantità:

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Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,41 USD~~; ~~1,41 USD~~

10: ~~1,20 USD~~; ~~12,00 USD~~

100: ~~0,93 USD~~; ~~92,80 USD~~

500: ~~0,82 USD~~; ~~410,00 USD~~

Iniziare con

IRF640NSTRLP 6
IRF640NSTRL 7
IRF640NST 12
IRF640NS 14
IRF640N 33
IRF640 72
IRF64 115
IRF6 688
IRF 8615

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IRF640NSTRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes