FD900R12IP4DBOSA1

FD900R12IP4DBOSA1
Mfr. #:
FD900R12IP4DBOSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT MODULE VCES 1200V 900A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FD900R12IP4DBOSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
FD900R, FD900, FD90, FD9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 9.2pF 50volts C0G +/-0.25pF
***ineon SCT
1200 V PrimePACK™2 chopper IGBT module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and NTC, AG-PRIME2-1-10, RoHS
***ment14 APAC
IGBT, HIG POW, 1200V, 900A; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:5.1kW
***ineon
1200V PrimePACK2 chopper IGBT module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; V(cesat) with positive Temperature Coefficient; Low V(cesat); 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups
***ure Electronics
GBPC Series 200V 400A Glass Passivated Single Phase Bridge Power Module - GBPC-W
***et
Diode Rectifier Bridge Single 200V 35A 4-Pin Case GBPC-W Bulk
***(Formerly Allied Electronics)
GBPC3502W-E4/51; Bridge Rectifier; 35A 200V; 4-Pin GBPC-W
***ark
0.5A,50V,50Ns,uf Surperect,melf Rohs Compliant: Yes
***ment14 APAC
BRIDGE RECTIFIER, 1PH, 35A 200V THD
***i-Key
BRIDGE RECT 1P 200V 35A GBPC-W
Parte # Mfg. Descrizione Azione Prezzo
FD900R12IP4DBOSA1
DISTI # FD900R12IP4DBOSA1-ND
Infineon Technologies AGIGBT MODULE VCES 1200V 900A
RoHS: Not compliant
Min Qty: 3
Container: Bulk
Temporarily Out of Stock
  • 3:$454.8267
FD900R12IP4DBOSA1
DISTI # FD900R12IP4DBOSA1
Infineon Technologies AGINDUSTRY - Trays (Alt: FD900R12IP4DBOSA1)
RoHS: Compliant
Min Qty: 3
Container: Tray
Americas - 3
  • 30:$411.9900
  • 15:$422.0900
  • 9:$432.7900
  • 6:$444.0900
  • 3:$449.8900
FD900R12IP4D
DISTI # 641-FD900R12IP4D
Infineon Technologies AGIGBT Modules IGBT 1200V 900A0
  • 1:$461.7000
  • 5:$433.8700
Immagine Parte # Descrizione
FD900R12IP4D

Mfr.#: FD900R12IP4D

OMO.#: OMO-FD900R12IP4D

IGBT Modules IGBT 1200V 900A
FD900R12IP4DV

Mfr.#: FD900R12IP4DV

OMO.#: OMO-FD900R12IP4DV

IGBT Modules
FD900R12IP4D

Mfr.#: FD900R12IP4D

OMO.#: OMO-FD900R12IP4D-125

IGBT Modules IGBT 1200V 900A
FD900R12IP4DBOSA1

Mfr.#: FD900R12IP4DBOSA1

OMO.#: OMO-FD900R12IP4DBOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 1200V 900A
FD900R12IP4DV

Mfr.#: FD900R12IP4DV

OMO.#: OMO-FD900R12IP4DV-1190

IGBT Modules
FD900R12IP4DVBOSA1

Mfr.#: FD900R12IP4DVBOSA1

OMO.#: OMO-FD900R12IP4DVBOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 1200V 900A
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di FD900R12IP4DBOSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
617,98 USD
617,98 USD
10
587,09 USD
5 870,86 USD
100
556,19 USD
55 618,65 USD
500
525,29 USD
262 643,65 USD
1000
494,39 USD
494 388,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
Top