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APT80GA60B

APT80GA60B
Mfr. #:
APT80GA60B
Produttore:
Microchip / Microsemi
Descrizione:
IGBT Transistors FG, IGBT, 600V, TO-247
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
APT80GA60B Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT80GA60B DatasheetAPT80GA60B Datasheet (P4-P6)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Microchip
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
2 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
143 A
Pd - Dissipazione di potenza:
625 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
143 A
Altezza:
21.46 mm
Lunghezza:
16.26 mm
Intervallo operativo di temperatura:
- 55 C to + 150 C
Larghezza:
5.31 mm
Marca:
Microchip / Microsemi
Corrente continua del collettore:
143 A
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1
sottocategoria:
IGBT
Nome depositato:
POWER MOS 8
Unità di peso:
1.340411 oz
Tags
APT80GA, APT80G, APT80, APT8, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Pt Mos 8 Single 600 V 80 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT80GA60B
***ical
Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 143A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***ical
Trans IGBT Chip N-CH 600V 150A 428000mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT,600V,75A,TO247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:428W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 110A 446000mW 3-Pin(3+Tab) TO-247 Tube
***i-Key
IGBT 600V 110A 446W TO247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***hardson RFPD
POWER IGBT TRANSISTOR
***S
new, original packaged
***ource
Thunderbolt IGBT
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UDPBF
***hine Compare
Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC
*** Electronics
IR - IR IRG4PC50UD IGBT DEVICE IGBT W/DIODE 600V 55A TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 55A 3-Pin(3+Tab) TO-247AC
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UPBF
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2 V Current release time: 120 ns Power dissipation: 200 W
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50U; Fall Time Max:120ns; Fall Time tf:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***ical
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
*** Source Electronics
Trans IGBT Chip N-CH 600V 150A 750000mW 3-Pin Power-247 Tube / IGBT 600V 150A 750W POWER-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V,75A,POWER-247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:Power 247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Parte # Mfg. Descrizione Azione Prezzo
APT80GA60B
DISTI # APT80GA60B-ND		Microsemi CorporationIGBT 600V 143A 625W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		11In Stock
  • 510:$7.6528
  • 270:$8.3934
  • 120:$9.1340
  • 30:$10.1213
  • 10:$11.1090
  • 1:$12.3400
APT80GA60B
DISTI # 494-APT80GA60B		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
RoHS: Compliant		70
  • 1:$11.5200
  • 10:$10.3700
  • 25:$9.4500
  • 50:$8.8000
  • 100:$8.5200
  • 250:$7.7800
  • 500:$7.1000
  • 1000:$6.0100
Immagine Parte # Descrizione
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1N4002-E3/73

Mfr.#: 1N4002-E3/73

OMO.#: OMO-1N4002-E3-73

 Rectifiers Vr/100V Io/1A
FTD7904

Mfr.#: FTD7904

OMO.#: OMO-FTD7904-612

 Toggle Switches SPDT ON-ON 6A PNL TOGGLE
TC4432COA

Mfr.#: TC4432COA

OMO.#: OMO-TC4432COA-MICROCHIP-TECHNOLOGY

 Gate Drivers 1.5A Sngl 30V N-Inv
ERJ-3RBD2002V

Mfr.#: ERJ-3RBD2002V

OMO.#: OMO-ERJ-3RBD2002V-1090

 Thick Film Resistors - SMD 0603 20Kohms 0.5%Tol
1N4002-E3/73

Mfr.#: 1N4002-E3/73

OMO.#: OMO-1N4002-E3-73-VISHAY

 Rectifiers Vr/100V Io/1A
Disponibilità
Azione:
69
Su ordine:
2052
Inserisci la quantità:
Il prezzo attuale di APT80GA60B è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
11,52 USD
11,52 USD
10
10,37 USD
103,70 USD
25
9,45 USD
236,25 USD
50
8,80 USD
440,00 USD
100
8,52 USD
852,00 USD
250
7,78 USD
1 945,00 USD
500
7,10 USD
3 550,00 USD
1000
6,01 USD
6 010,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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