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IKW15T120

IKW15T120
Mfr. #:
IKW15T120
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors LOW LOSS DuoPack 1200V 15A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IKW15T120 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
1.7 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
30 A
Pd - Dissipazione di potenza:
110 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Serie:
TRENCHSTOP IGBT
Confezione:
Tubo
Altezza:
20.9 mm
Lunghezza:
15.9 mm
Larghezza:
5.3 mm
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IKW15T120FKSA1 IKW15T12XK SP000013938
Unità di peso:
1.340411 oz
Tags
IKW15T, IKW1, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 30A 110000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ark
Transistor, Igbt, 1.2Kv, 30A, To-247; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:110W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
Parte # Mfg. Descrizione Azione Prezzo
IKW15T120FKSA1
DISTI # V99:2348_06378624		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$2.1930
  • 250:$2.2590
  • 100:$2.5300
  • 50:$2.7660
  • 25:$2.8790
  • 10:$3.1030
  • 1:$3.3470
IKW15T120FKSA1
DISTI # IKW15T120FKSA1-ND		Infineon Technologies AGIGBT 1200V 30A 110W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.5150
IKW15T120FKSA1
DISTI # 26197468		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$2.1930
  • 250:$2.2590
  • 100:$2.5300
  • 50:$2.7660
  • 25:$2.8790
  • 10:$3.1030
  • 3:$3.3470
IKW15T120
DISTI # 30578946		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247
RoHS: Compliant		107
  • 50:$2.7923
IKW15T120
DISTI # IKW15T120		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube - Bulk (Alt: IKW15T120)
RoHS: Compliant
Min Qty: 122
Container: Bulk		Americas - 0
  • 122:$2.0900
  • 124:$2.0900
  • 246:$1.9900
  • 610:$1.8900
  • 1220:$1.8900
IKW15T120
DISTI # SP000013938		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube (Alt: SP000013938)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€2.4900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.0900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.7900
IKW15T120
DISTI # SP000013938		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube (Alt: SP000013938)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€2.8900
  • 10:€2.2900
  • 25:€2.0900
  • 50:€1.9900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.8900
IKW15T120XK
DISTI # IKW15T120FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IKW15T120FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.3900
  • 480:$2.2900
  • 960:$2.1900
  • 1440:$2.0900
  • 2400:$2.0900
IKW15T120FKSA1
DISTI # 13AC9007		Infineon Technologies AGTRANSISTOR, IGBT, 1.2KV, 30A, TO-247,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:110W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes115
  • 500:$2.5100
  • 250:$2.6000
  • 100:$3.0900
  • 50:$3.5700
  • 25:$3.8000
  • 10:$4.3400
  • 1:$5.0200
IKW15T120
DISTI # 726-IKW15T120		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 15A
RoHS: Compliant		309
  • 1:$5.8300
  • 10:$4.9600
  • 100:$4.3000
  • 250:$4.0800
  • 500:$3.6600
IKW15T120 E8161
DISTI # 726-IKW15T120E8161		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 15A
RoHS: Compliant		0
    IKW15T120Infineon Technologies AGInsulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
    RoHS: Compliant    		143
    • 1000:$2.0000
    • 500:$2.1100
    • 100:$2.1900
    • 25:$2.2900
    • 1:$2.4600
    IKW15T120FKSA1
    DISTI # 7545399    		Infineon Technologies AGTRANSISTOR IGBT N-CH 1.2KV 30A TO247, EA28
    • 10:£2.9800
    • 1:£4.3900
    IKW15T120FKSA1
    DISTI # 7545399P    		Infineon Technologies AGTRANSISTOR IGBT N-CH 1.2KV 30A TO247, TU272
    • 10:£2.9800
    IKW15T120
    DISTI # IKW15T120    		Infineon Technologies AGTransistor: IGBT,1200V,30A,110W,TO247-3182
    • 1:$3.7300
    • 3:$3.3500
    • 10:$2.7800
    • 30:$2.6900
    IKW15T120FKSA1
    DISTI # 2725786    		Infineon Technologies AGTRANSISTOR, IGBT, 1.2KV, 30A, TO-247
    RoHS: Compliant    		120
    • 500:£3.1900
    • 250:£3.2600
    • 100:£3.3300
    • 10:£3.4000
    • 1:£3.4700
    IKW15T120
    DISTI # 1471745    		Infineon Technologies AGIGBT, N, 1200V, 15A, TO-247
    RoHS: Compliant    		0
    • 500:$5.5200
    • 250:$6.1500
    • 100:$6.4800
    • 10:$7.4700
    • 1:$8.7900
    IKW15T120FKSA1
    DISTI # 2725786    		Infineon Technologies AGTRANSISTOR, IGBT, 1.2KV, 30A, TO-247
    RoHS: Compliant    		115
    • 100:$5.2000
    • 10:$5.8700
    • 1:$6.2800
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    Disponibilità
    Azione:
    273
    Su ordine:
    2256
    Inserisci la quantità:
    Il prezzo attuale di IKW15T120 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    5,83 USD
    5,83 USD
    10
    4,96 USD
    49,60 USD
    100
    4,30 USD
    430,00 USD
    250
    4,08 USD
    1 020,00 USD
    500
    3,66 USD
    1 830,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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