IS42SM32160C-75BL

IS42SM32160C-75BL
Mfr. #:
IS42SM32160C-75BL
Produttore:
ISSI, Integrated Silicon Solution Inc
Descrizione:
DRAM 512M (16Mx32) 133MHz 3.3V Mobile SDR
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IS42SM32160C-75BL Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IS42SM32160C-75BL DatasheetIS42SM32160C-75BL Datasheet (P4-P6)IS42SM32160C-75BL Datasheet (P7-P9)IS42SM32160C-75BL Datasheet (P10-P12)IS42SM32160C-75BL Datasheet (P13-P15)IS42SM32160C-75BL Datasheet (P16-P17)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
ISSI, Integrated Silicon Solution Inc
categoria di prodotto
Memoria
Serie
-
Confezione
Vassoio
Pacchetto-Custodia
90-LFBGA
Temperatura di esercizio
0°C ~ 70°C (TA)
Interfaccia
Parallelo
Tensione di alimentazione
2.7 V ~ 3.6 V
Pacchetto-dispositivo-fornitore
90-WBGA (8x13)
Dimensione della memoria
512M (16M x 32)
Tipo di memoria
SDRAM mobile
Velocità
133MHz
Formato-Memoria
RAM
Tags
IS42SM32160C-75, IS42SM32160C, IS42SM3216, IS42SM321, IS42SM3, IS42SM, IS42S, IS42, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***n
    A***n
    RU

    Ok. Received, but did not check yet.

    2019-04-22
    K***v
    K***v
    IL

    Thanks! Recommended!

    2019-05-26
    A***s
    A***s
    RU

    Thank you, fast delivery!

    2019-05-15
    A***n
    A***n
    RU

    To chelyabinsk about 70 days. All ok.

    2019-04-28
***ical
DRAM Chip Mobile SDRAM 512Mbit 16Mx32 3.3V 90-Pin WBGA
***i-Key
IC DRAM 512MBIT PARALLEL 90WBGA
***et
ISNIS42SM32160C-75BL DRAM CHIP MOBILE SD
Parte # Mfg. Descrizione Azione Prezzo
IS42SM32160C-75BL
DISTI # IS42SM32160C-75BL-ND
Integrated Silicon Solution IncIC DRAM 512M PARALLEL 90WBGA
RoHS: Compliant
Container: Tray
Limited Supply - Call
    IS42SM32160C-75BLI
    DISTI # IS42SM32160C-75BLI-ND
    Integrated Silicon Solution IncIC DRAM 512M PARALLEL 90WBGA
    RoHS: Compliant
    Container: Tray
    Limited Supply - Call
      IS42SM32160C-75BLI-TR
      DISTI # IS42SM32160C-75BLI-TR-ND
      Integrated Silicon Solution IncIC DRAM 512M PARALLEL 90WBGA
      RoHS: Compliant
      Container: Tape & Reel (TR)
      Limited Supply - Call
        IS42SM32160C-75BL-TR
        DISTI # IS42SM32160C-75BL-TR-ND
        Integrated Silicon Solution IncIC DRAM 512M PARALLEL 90WBGA
        RoHS: Compliant
        Container: Tape & Reel (TR)
        Limited Supply - Call
          IS42SM32160C-75BL
          DISTI # 870-42SM32160C-75BL
          Integrated Silicon Solution IncDRAM 512M (16Mx32) 133MHz 3.3V Mobile SDR
          RoHS: Compliant
          0
            IS42SM32160C-75BLI
            DISTI # 870-42SM32160C-75BLI
            Integrated Silicon Solution IncDRAM 512M (16Mx32) 133MHz 3.3V Mobile SDR
            RoHS: Compliant
            0
              IS42SM32160C-75BLI-TR
              DISTI # 870-42SM32160C75BLIT
              Integrated Silicon Solution IncDRAM 512M (16Mx32) 133MHz Mobile SDRAM 3.3v
              RoHS: Compliant
              0
                IS42SM32160C-75BL-TR
                DISTI # 870-42SM32160C-75BLT
                Integrated Silicon Solution IncDRAM 512M (16Mx32) 133MHz Mobile SDRAM 3.3v
                RoHS: Compliant
                0
                  Immagine Parte # Descrizione
                  IS42SM32400H-6BLI

                  Mfr.#: IS42SM32400H-6BLI

                  OMO.#: OMO-IS42SM32400H-6BLI

                  SRAM M-SDRAM,128M,3.3V 166MHz,4Mx32, IT
                  IS42SM32100D-6BLI

                  Mfr.#: IS42SM32100D-6BLI

                  OMO.#: OMO-IS42SM32100D-6BLI

                  DRAM 32M, 3.3V, M-SDRAM 1Mx32, 166Mhz,RoHS
                  IS42SM32160C-75BLI

                  Mfr.#: IS42SM32160C-75BLI

                  OMO.#: OMO-IS42SM32160C-75BLI

                  DRAM 512M (16Mx32) 133MHz 3.3V Mobile SDR
                  IS42SM32400G-6BLI

                  Mfr.#: IS42SM32400G-6BLI

                  OMO.#: OMO-IS42SM32400G-6BLI

                  DRAM 128M 4Mx32 166Mhz 3.3V Mobile SDR
                  IS42SM32200M-6BLI

                  Mfr.#: IS42SM32200M-6BLI

                  OMO.#: OMO-IS42SM32200M-6BLI-INTEGRATED-SILICON-SOLUTION

                  DRAM 64M, 3.3V, M-SDRAM 2Mx32, 133Mhz, RoHS
                  IS42SM32800K-6BLI-TR

                  Mfr.#: IS42SM32800K-6BLI-TR

                  OMO.#: OMO-IS42SM32800K-6BLI-TR-INTEGRATED-SILICON-SOLUTION

                  DRAM 256M, 3.3V, 166Mhz Mobile SDRAM
                  IS42SM32200K-75BLI-TR

                  Mfr.#: IS42SM32200K-75BLI-TR

                  OMO.#: OMO-IS42SM32200K-75BLI-TR-INTEGRATED-SILICON-SOLUTION

                  DRAM 64M 2Mx32 133Mhz Mobile SDRAM 3.3v
                  IS42SM32160C-75BL

                  Mfr.#: IS42SM32160C-75BL

                  OMO.#: OMO-IS42SM32160C-75BL-INTEGRATED-SILICON-SOLUTION

                  DRAM 512M (16Mx32) 133MHz 3.3V Mobile SDR
                  IS42SM32400G-6BLI

                  Mfr.#: IS42SM32400G-6BLI

                  OMO.#: OMO-IS42SM32400G-6BLI-INTEGRATED-SILICON-SOLUTION

                  DRAM 128M 4Mx32 166Mhz 3.3V Mobile SDR
                  IS42SM32800D-75BLI

                  Mfr.#: IS42SM32800D-75BLI

                  OMO.#: OMO-IS42SM32800D-75BLI-INTEGRATED-SILICON-SOLUTION

                  IC DRAM 256M PARALLEL 90TFBGA
                  Disponibilità
                  Azione:
                  Available
                  Su ordine:
                  2000
                  Inserisci la quantità:
                  Il prezzo attuale di IS42SM32160C-75BL è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
                  Prezzo di riferimento (USD)
                  Quantità
                  Prezzo unitario
                  est. Prezzo
                  1
                  0,00 USD
                  0,00 USD
                  10
                  0,00 USD
                  0,00 USD
                  100
                  0,00 USD
                  0,00 USD
                  500
                  0,00 USD
                  0,00 USD
                  1000
                  0,00 USD
                  0,00 USD
                  Iniziare con
                  Prodotti più recenti
                  • W29N SLC NAND Flash Memory
                    Winbond’s SLC NAND Flash products are direct drop-in replacements to the ONFi SLC NAND products available in the industry from different suppliers and the products are compatible.
                  • Compare IS42SM32160C-75BL
                    IS42SM32160C75BL vs IS42SM32160C75BLTR vs IS42SM32160C75BLI
                  • SZV Series Capacitors
                    With 1,000 hour life span at 105°C, Rubycon’s SZV series is designed for applications requiring long-life durability.
                  • Portable High Efficiency Solar Charger and LED Lig
                    Equipped with two USB ports, one micro-USB port, and four white LED lights, and produces 5.2 V of power at 1.5 A, which is about 8 watts of solar power.
                  • TLP577x Optocouplers
                    Toshiba’s TLP5771, TLP5772, and TLP5774 optocouplers low threshold input current drive; rail-to-rail output gate driver optocouplers increase overall system efficiency.
                  • DIMENSION CP10 Series DIN Rail Power Supplies
                    The PULS DIMENSION CP10 series power supplies are characterised by an advanced inrush current limitation and high efficiency values.
                  Top