ATF-54143-TR1G

Mfr. #:: ATF-54143-TR1G
Produttore:: Broadcom / Avago
Descrizione:: RF JFET Transistors Transistor GaAs Single Voltage
Ciclo vitale:: Nuovo da questo produttore.
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Broadcom Limited

Categoria di prodotto:: Transistor RF JFET

RoHS:: Y

Tipo di transistor:: efemità

Tecnologia:: GaAs

Guadagno:: 16.6 dB

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 5 V

Vgs - Tensione di rottura gate-source:: - 5 V to 1 V

Id - Corrente di scarico continua:: 120 mA

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 725 mW

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SOT-343

Confezione:: Bobina

Configurazione:: Singola doppia sorgente

Frequenza operativa:: 2 GHz

Prodotto:: RF JFET

Tipo:: GaAs EpHEMT

Marca:: Broadcom / Avago

Transconduttanza diretta - Min:: 410 mmho

NF - Figura di rumore:: 0.5 dB

P1dB - Punto di compressione:: 20.4 dBm

Tipologia di prodotto:: Transistor RF JFET

Quantità confezione di fabbrica:: 3000

sottocategoria:: transistor

Tags: ATF-54143-TR1G, ATF-54143-TR1, ATF-54143-T, ATF-54143, ATF-5414, ATF-54, ATF-5, ATF

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ATF-54143-TR1G Descrizione

***el Electronic: BROADCOM LIMITED ATF-54143-TR1G RF FET Transistor, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343

***ark: Transistor; Transistor Type:RF FET; Transistor Polarity:PNP; Drain Source Voltage, Vds:5V; Gain:16.6dB; Gate-Source Voltage:5V; Continuous Drain Current, Id:120mA; Noise Figure, Typ:0.5dB; Power Dissipation, Pd:725mW ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, RF, HEMT, SOT-343; Transistor Polarity:N Channel; Continuous Drain Current Id:120mA; Drain Source Voltage Vds:5V; Threshold Voltage Vgs Typ:380mV; Power Dissipation Pd:725mW; Transistor Case Style:SOT-343; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:120mA; Current Idss Max:120mA; Gain Bandwidth ft Typ:2GHz; Package / Case:SOT-343; Power Dissipation Pd:360mW; Power Dissipation Pd:725mW; Power Dissipation Ptot Max:360mW; SMD Marking:4F; Termination Type:SMD; Voltage Vds Typ:3V; Voltage Vgs Max:1V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
ATF-54143-TR1G DISTI # 516-1572-2-ND	Broadcom Limited	FET RF 5V 2GHZ SOT-343 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
ATF-54143-TR1G DISTI # 516-1572-1-ND	Broadcom Limited	FET RF 5V 2GHZ SOT-343 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
ATF-54143-TR1G DISTI # 516-1572-6-ND	Broadcom Limited	FET RF 5V 2GHZ SOT-343 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
ATF-54143-TR1G DISTI # 96K6512	Broadcom Limited	MOSFET, RF, HEMT, SOT-343,Drain Source Voltage Vds:5V,Continuous Drain Current Id:120mA,Power Dissipation Pd:725mW,Operating Frequency Min:450MHz,Operating Frequency Max:6GHz,RF Transistor Case:SOT-343,No. of Pins:4Pins,, RoHS Compliant: Yes	0	1:$4.0700 10:$3.6300 25:$3.4100 50:$3.2000 100:$2.9800
ATF-54143-TR1G DISTI # 630-ATF-54143-TR1G	Broadcom Limited	RF JFET Transistors Transistor GaAs Single Voltage RoHS: Compliant	0
ATF-54143-TR1G DISTI # 1056824RL	Broadcom Limited	MOSFET, RF, HEMT, SOT-343 RoHS: Compliant	0	1:$5.8300 10:$4.6100 100:$3.8900
ATF-54143-TR1G DISTI # 1056824	Broadcom Limited	MOSFET, RF, HEMT, SOT-343 RoHS: Compliant	0	1:$5.8300 10:$4.6100 100:$3.8900
ATF-54143-TR1G DISTI # 1056824	Broadcom Limited	MOSFET, RF, HEMT, SOT-343 RoHS: Compliant	0	1:£1.7100 10:£1.6800 100:£1.6400 250:£1.6100 500:£1.5700

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Disponibilità

Azione:: Available
Su ordine:: 5000
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ATF-54143-TR1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes