SSM2212CPZ-R7

SSM2212CPZ-R7
Mfr. #:
SSM2212CPZ-R7
Produttore:
Analog Devices Inc.
Descrizione:
Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SSM2212CPZ-R7 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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HTML Datasheet:
SSM2212CPZ-R7 DatasheetSSM2212CPZ-R7 Datasheet (P4-P6)SSM2212CPZ-R7 Datasheet (P7-P9)SSM2212CPZ-R7 Datasheet (P10-P12)SSM2212CPZ-R7 Datasheet (P13)
ECAD Model:
Maggiori informazioni:
SSM2212CPZ-R7 maggiori informazioni SSM2212CPZ-R7 Product Details
Attributo del prodotto
Valore attributo
Produttore:
Analog Devices Inc.
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
LFCSP-16
Polarità del transistor:
NPN
Configurazione:
Dual
Tensione collettore-emettitore VCEO Max:
40 V
Collettore-tensione di base VCBO:
40 V
Tensione di saturazione collettore-emettitore:
50 mV
Corrente massima del collettore CC:
20 mA
Guadagno larghezza di banda prodotto fT:
200 MHz
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Serie:
SSM2212
Guadagno di corrente CC hFE Max:
2400 at 1 mA, 15 V, 2400 at 1 mA, 15 V
Confezione:
Bobina
Marca:
Dispositivi analogici
Guadagno base/collettore DC hfe min:
300 at 1 mA, 15 V, 300 at 1 mA, 15 V
Sensibile all'umidità:
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
1500
sottocategoria:
transistor
Tags
SSM2212C, SSM2212, SSM221, SSM22, SSM2, SSM
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 40V 0.02A 16-Pin LFCSP EP T/R
***ark
Low Noise Matched Dual NPN Transistor, REEL7
***et Europe
Trans GP BJT NPN 40V 0.02A 16-Pin LFCSP T/R
***ponent Sense
IC SMD LOW-NOISE FOR AUDIO DUAL MATCHED
***i-Key
TRANS 2NPN 40V 0.02A 16WLCSP
***hardson RFPD
RF POWER TRANSISTOR
***log Devices
The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high- order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications. The SSM2212 SOIC performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C. The SSM2212 is available in 8-lead SOIC and 16-lead LFCSP packages.
SSM2212 Dual-Matched NPN Transistor
Analog Devices SSM2212 features a dual, NPN-matched transistor pair specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications.Learn More
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Disponibilità
Azione:
Available
Su ordine:
1987
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est. Prezzo
1
6,73 USD
6,73 USD
10
6,06 USD
60,60 USD
25
5,70 USD
142,50 USD
50
5,36 USD
268,00 USD
100
5,09 USD
509,00 USD
250
4,78 USD
1 195,00 USD
500
4,34 USD
2 170,00 USD
1000
3,72 USD
3 720,00 USD
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