MJE5852G

Mfr. #:: MJE5852G
Produttore:: ON Semiconductor
Descrizione:: Bipolar Transistors - BJT 8A 400V 80W PNP
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: MJE5852G Scheda dati
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HTML Datasheet:: MJE5852G Datasheet MJE5852G Datasheet (P4-P6)MJE5852G Datasheet (P7-P8)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: Transistor bipolari - BJT

RoHS:: Y

Stile di montaggio:: Foro passante

Pacchetto/custodia:: TO-220-3

Polarità del transistor:: PNP

Configurazione:: Separare

Tensione collettore-emettitore VCEO Max:: 400 V

Collettore-tensione di base VCBO:: 450 V

Emettitore-tensione di base VEBO:: 6 V

Tensione di saturazione collettore-emettitore:: 2 V

Corrente massima del collettore CC:: 8 A

Temperatura di esercizio minima:: - 65 C

Temperatura massima di esercizio:: + 150 C

Serie:: MJE5852

Altezza:: 15.75 mm

Lunghezza:: 10.53 mm

Confezione:: Tubo

Larghezza:: 4.83 mm

Marca:: ON Semiconductor

Corrente continua del collettore:: 8 A

Guadagno base/collettore DC hfe min:: 15

Pd - Dissipazione di potenza:: 80 W

Tipologia di prodotto:: BJT - Transistor bipolari

Quantità confezione di fabbrica:: 50

sottocategoria:: transistor

Unità di peso:: 0.211644 oz

Tags: MJE58, MJE5, MJE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

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Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJE5852G Descrizione

***(Formerly Allied Electronics): ON Semi MJE5852G PNP High Voltage Bipolar Transistor; 8 A; 400 V; 3-Pin TO-220AB

***ical: Trans GP BJT PNP 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: MJE Series 400 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB

***emi: 8.0 A, 400 V PNP Bipolar Power Transistor

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***enic: 400V 80W 8A 5@5A5V 5V@8A3A PNP -65¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

***nell: TRANSISTOR, PNP, TO-220AB; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 15hFE; Transistor Case Style:

***ark: RF TRANSISTOR, PNP, -400V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

***enic: 350V 80W 8A 5@5A5V PNP 5V@8A3A -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS

***Yang: Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***emi: 8.0 A, 350 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***ment14 APAC: BIPOLAR TRANSISTOR, PNP, -350V, TO-220;

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

***emi: 8.0 A, 300 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***el Electronic: RES SMD 7.68K OHM 1% 1/2W 1206

***(Formerly Allied Electronics): Transistor, Bipolar, Si, PNP, Power, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, hFE 5

***enic: 300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

***ical: Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: MJE Series 300 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB

***emi: 8.0 A, 300 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***nell: TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available

***th Star Micro: The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
MJE5852G DISTI # V36:1790_07283642	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	648	1000:$1.2926 500:$1.5340 100:$1.7273 50:$2.0979 1:$2.4084
MJE5852G DISTI # V99:2348_07283642	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	369	1000:$1.2926 500:$1.5340 100:$1.7273 50:$2.0979 1:$2.4084
MJE5852G DISTI # MJE5852GOS-ND	ON Semiconductor	TRANS PNP 400V 8A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	18In Stock	1000:$1.4063 500:$1.6973 100:$2.0659 50:$2.4248 1:$2.8600
MJE5852G DISTI # 30534971	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	648	500:$1.5340 100:$1.7273 50:$2.0979 7:$2.4084
MJE5852G DISTI # 30587790	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	373	100:$2.0272 50:$2.4352 10:$2.7412 8:$3.5955
MJE5852G DISTI # 30276818	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	369	100:$1.7273 50:$2.0979 6:$2.4084
MJE5852G DISTI # 31291194	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	250	500:$1.4784 250:$1.5840 100:$1.6608 50:$1.7280
MJE5852G DISTI # MJE5852G	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail (Alt: MJE5852G) RoHS: Compliant Min Qty: 50	Europe - 1400	1:€2.3500 10:€1.9900 100:€1.6000 250:€1.5000 500:€1.4000 1000:€1.0800
MJE5852G DISTI # MJE5852G	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: MJE5852G) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$1.1900 10:$1.1900 25:$1.1900 50:$1.1900 100:$1.1900 500:$1.1900 1000:$1.1900
MJE5852G DISTI # 26K4469	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 26K4469) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$3.0800 10:$2.6300 100:$2.1300 500:$1.8700 1000:$1.5600
MJE5852G DISTI # 26K4469	ON Semiconductor	RF TRANSISTOR, PNP, -400V, TO-220,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:400V,Transition Frequency ft:-,Power Dissipation Pd:80W,DC Collector Current:8A,DC Current Gain hFE:15hFE,No. of Pins:3Pins,MSL:- RoHS Compliant: Yes	47	1:$3.0800 10:$2.6300 100:$2.1300 500:$1.8700 1000:$1.5600
MJE5852G DISTI # 70100018	ON Semiconductor	ON Semi MJE5852G PNP High Voltage Bipolar Transistor,8 A,400 V,3-Pin TO-220AB RoHS: Compliant	0	1:$1.4990
MJE5852G	ON Semiconductor	MJE Series 400 V 8 A SWITCHMODE Series PNP Silicon Power Transistor - TO-220AB RoHS: Compliant	36Tube	10:$2.1300 50:$1.6200 100:$1.5500 250:$1.4500 500:$1.3800
MJE5851G DISTI # 863-MJE5851G	ON Semiconductor	Bipolar Transistors - BJT 8A 350V 80W PNP RoHS: Compliant	292	1:$2.9000 10:$2.4700 100:$1.9700 500:$1.7300 1000:$1.4300
MJE5852G DISTI # 863-MJE5852G	ON Semiconductor	Bipolar Transistors - BJT 8A 400V 80W PNP RoHS: Compliant	375	1:$2.7200 10:$2.3100 100:$1.8500 500:$1.6200 1000:$1.3400
MJE5852 DISTI # 863-MJE5852	ON Semiconductor	Bipolar Transistors - BJT 8A 400V 80W PNP RoHS: Not compliant	0
MJE5852 DISTI # 511-MJE5852	STMicroelectronics	Bipolar Transistors - BJT PNP High Voltage RoHS: Compliant	0
MJE5852G	ON Semiconductor	RoHS: Not Compliant	26	1000:$1.4300 500:$1.5100 100:$1.5700 25:$1.6400 1:$1.7700
MJE5852G DISTI # 5450292	ON Semiconductor	TRANSISTOR PNP 400V 8A 80W TO220AB, EA	300	1:£2.0000 10:£1.6500
MJE5852G	ON Semiconductor	RoHS: Compliant	Europe - 8
MJE5852G DISTI # 9555889	ON Semiconductor	TRANSISTOR, PNP, TO-220AB RoHS: Compliant	415	1:£2.3300 10:£1.7400 100:£1.4000 250:£1.3200 500:£1.2300
MJE5852G	ON Semiconductor	SWITCHMODE Series PNP Silicon Power Transistors	49	1:$1.9500 100:$1.5700 500:$1.4500 1000:$1.3700
MJE5852G DISTI # 9555889	ON Semiconductor	TRANSISTOR, PNP, TO-220AB RoHS: Compliant	1298	1:$4.3100 10:$3.6600 100:$2.9300 500:$2.5700 1000:$2.1300
MJE5852G DISTI # XSKDRABS0013091	ON SEMICONDUCTOR	RoHS: Compliant	1008	450:$1.6600 1008:$1.5500
MJE5852G DISTI # C1S541901370105	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	373	100:$1.5900 50:$1.9100 10:$2.1500 1:$2.8200
MJE5852G DISTI # C1S541900354304	ON Semiconductor	Trans GP BJT PNP 400V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	250	100:$2.0100 50:$2.4400

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Disponibilità

Azione:: 653
Su ordine:: 2636
Inserisci la quantità:

Il prezzo attuale di MJE5852G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,72 USD~~; ~~2,72 USD~~

10: ~~2,31 USD~~; ~~23,10 USD~~

100: ~~1,85 USD~~; ~~185,00 USD~~

500: ~~1,62 USD~~; ~~810,00 USD~~

1000: ~~1,34 USD~~; ~~1 340,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

MJE58 7
MJE5 34
MJE 579

MJE5852G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes