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IKW30N65NL5XKSA1

IKW30N65NL5XKSA1
Mfr. #:
IKW30N65NL5XKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors 650V IGBT Trenchstop 5
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IKW30N65NL5XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IKW30N65NL5XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.05 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
85 A
Pd - Dissipazione di potenza:
227 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
TRENCHSTOP 5 L5
Confezione:
Tubo
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IKW30N65NL5 SP001174466
Tags
IKW30N65, IKW30N6, IKW30N, IKW3, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
Parte # Mfg. Descrizione Azione Prezzo
IKW30N65NL5XKSA1
DISTI # V99:2348_06378702		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		218
  • 500:$3.3100
  • 250:$3.7330
  • 100:$3.9670
  • 10:$4.6000
  • 1:$6.0038
IKW30N65NL5XKSA1
DISTI # IKW30N65NL5XKSA1IN-ND		Infineon Technologies AGIGBT 650V 30A UFAST DIO TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.2523
IKW30N65NL5XKSA1
DISTI # 27492280		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		218
  • 500:$3.3100
  • 250:$3.7330
  • 100:$3.9630
  • 10:$4.6000
  • 3:$5.4580
IKW30N65NL5XKSA1
DISTI # IKW30N65NL5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Bulk (Alt: IKW30N65NL5XKSA1)
RoHS: Compliant
Min Qty: 140
Container: Bulk		Americas - 0
  • 1400:$2.1900
  • 420:$2.2900
  • 700:$2.2900
  • 280:$2.3900
  • 140:$2.4900
IKW30N65NL5XKSA1
DISTI # IKW30N65NL5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW30N65NL5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.5900
  • 2400:$2.5900
  • 960:$2.6900
  • 480:$2.7900
  • 240:$2.8900
IKW30N65NL5XKSA1
DISTI # SP001174466		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001174466)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.1900
  • 50:€2.2900
  • 100:€2.2900
  • 500:€2.2900
  • 10:€2.4900
  • 25:€2.4900
  • 1:€2.5900
IKW30N65NL5XKSA1
DISTI # 34AC1631		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes159
  • 500:$3.4700
  • 250:$3.8800
  • 100:$4.0900
  • 50:$4.3000
  • 25:$4.5100
  • 10:$4.7200
  • 1:$5.5400
IKW30N65NL5XKSA1
DISTI # 726-IKW30N65NL5XKSA1		Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
RoHS: Compliant		2519
  • 1:$5.4900
  • 10:$4.6700
  • 100:$4.0500
  • 250:$3.8400
  • 500:$3.4400
IKW30N65NL5XKSA1Infineon Technologies AG 
RoHS: Not Compliant		70
  • 1000:$2.3600
  • 500:$2.4800
  • 100:$2.5800
  • 25:$2.6900
  • 1:$2.9000
IKW30N65NL5XKSA1
DISTI # 2781031		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		159
  • 1000:$3.8200
  • 500:$4.0000
  • 250:$4.2200
  • 100:$4.4500
  • 10:$5.0400
  • 1:$5.3900
IKW30N65NL5XKSA1
DISTI # 2781031		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247159
  • 100:£3.4500
  • 10:£3.9800
  • 1:£5.1900
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 IGBT TRENCH 650V 40A TO247
Disponibilità
Azione:
Available
Su ordine:
1985
Inserisci la quantità:
Il prezzo attuale di IKW30N65NL5XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
5,49 USD
5,49 USD
10
4,67 USD
46,70 USD
100
4,05 USD
405,00 USD
250
3,84 USD
960,00 USD
500
3,44 USD
1 720,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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