AFT18HW355SR6

AFT18HW355SR6
Mfr. #:
AFT18HW355SR6
Produttore:
NXP / Freescale
Descrizione:
RF MOSFET Transistors HV9 1.8GHz 350W NI230S-4
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AFT18HW355SR6 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AFT18HW355SR6 DatasheetAFT18HW355SR6 Datasheet (P4-P6)AFT18HW355SR6 Datasheet (P7-P9)AFT18HW355SR6 Datasheet (P10-P12)AFT18HW355SR6 Datasheet (P13-P15)AFT18HW355SR6 Datasheet (P16)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Canale N
Tecnologia:
si
Vds - Tensione di rottura Drain-Source:
65 V
Guadagno:
15.2 dB
Potenza di uscita:
63 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 225 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
NI-1230S-4
Confezione:
Bobina
Configurazione:
Separare
Frequenza operativa:
1.8 GHz
Serie:
AFT18HW355S
Tipo:
MOSFET di potenza RF
Marca:
NXP / Freescale
Modalità canale:
Aumento
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
150
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
10 V
Vgs th - Tensione di soglia gate-source:
2.1 V
Parte # Alias:
935320115128
Unità di peso:
0.297698 oz
Tags
AFT18HW, AFT18H, AFT18, AFT1, AFT
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V
***W
RF Power Transistor,1805 to 1880 MHz, 350 W, Typ Gain in dB is 15.2 @ 1880 MHz, 28 V, LDMOS, SOT1829
***ical
Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
***i-Key
FET RF 2CH 65V 1.88GHZ NI1230S-4
Parte # Mfg. Descrizione Azione Prezzo
AFT18HW355SR6
DISTI # AFT18HW355SR6-ND
NXP SemiconductorsFET RF 2CH 65V 1.88GHZ NI1230S-4
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Limited Supply - Call
    AFT18HW355SR6
    DISTI # 841-AFT18HW355SR6
    NXP SemiconductorsRF MOSFET Transistors HV9 1.8GHz 350W NI230S-4
    RoHS: Compliant
    0
      Immagine Parte # Descrizione
      AFT18H357-24SR6

      Mfr.#: AFT18H357-24SR6

      OMO.#: OMO-AFT18H357-24SR6

      RF MOSFET Transistors 1805-1995 MHz 63 W AVG. 28 V
      AFT18H357-24NR6

      Mfr.#: AFT18H357-24NR6

      OMO.#: OMO-AFT18H357-24NR6

      RF MOSFET Transistors 1805-1995 MHz, 63 W AVG., 28 V
      AFT18H356-24SR6

      Mfr.#: AFT18H356-24SR6

      OMO.#: OMO-AFT18H356-24SR6

      RF MOSFET Transistors AF HIP NI1230-4L2L
      AFT18HW355SR6

      Mfr.#: AFT18HW355SR6

      OMO.#: OMO-AFT18HW355SR6

      RF MOSFET Transistors HV9 1.8GHz 350W NI230S-4
      AFT18H356-24SR6

      Mfr.#: AFT18H356-24SR6

      OMO.#: OMO-AFT18H356-24SR6-NXP-SEMICONDUCTORS

      FET RF 2CH 65V 1.88GHZ NI1230-4
      AFT18HW355SR5

      Mfr.#: AFT18HW355SR5

      OMO.#: OMO-AFT18HW355SR5-NXP-SEMICONDUCTORS

      RF MOSFET Transistors HV9 1.8GHz 350W NI230S-4
      AFT18H350-4S2LR3

      Mfr.#: AFT18H350-4S2LR3

      OMO.#: OMO-AFT18H350-4S2LR3-1190

      Nuovo e originale
      AFT18H356-243S

      Mfr.#: AFT18H356-243S

      OMO.#: OMO-AFT18H356-243S-1190

      Nuovo e originale
      AFT18H356-24S

      Mfr.#: AFT18H356-24S

      OMO.#: OMO-AFT18H356-24S-1190

      Nuovo e originale
      AFT18H357-24S

      Mfr.#: AFT18H357-24S

      OMO.#: OMO-AFT18H357-24S-1190

      Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      2000
      Inserisci la quantità:
      Il prezzo attuale di AFT18HW355SR6 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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