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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| FMR19N60E DISTI # FE0000000001046 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR19N60ES DISTI # FE0000000001047 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR19N60ESSC DISTI # FE0000000004654 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR19N60E-51FRSC DISTI # FE0000000004652 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR19N60ESC DISTI # FE0000000004653 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: FMR1/4B560JTU OMO.#: OMO-FMR1-4B560JTU-1190 |
Nuovo e originale |
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Mfr.#: FMR11N60ES OMO.#: OMO-FMR11N60ES-1190 |
Nuovo e originale |
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Mfr.#: FMR11N90E OMO.#: OMO-FMR11N90E-1190 |
Power Field-Effect Transistor, 11A I(D), 900V,1ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMR17N60ES OMO.#: OMO-FMR17N60ES-1190 |
Power Field-Effect Transistor, 17A I(D),600V,0.4ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMR1819L OMO.#: OMO-FMR1819L-1190 |
Nuovo e originale |
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Mfr.#: FMR19N60E OMO.#: OMO-FMR19N60E-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |
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Mfr.#: FMR19N60E-51FR OMO.#: OMO-FMR19N60E-51FR-1190 |
Nuovo e originale |
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Mfr.#: FMR19N60ES OMO.#: OMO-FMR19N60ES-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |
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Mfr.#: FMR19N60ES-F236R OMO.#: OMO-FMR19N60ES-F236R-1190 |
Nuovo e originale |
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Mfr.#: FMR1101-104 OMO.#: OMO-FMR1101-104-1190 |
CONNECTOR |