BSC900N20NS3 G

BSC900N20NS3 G
Mfr. #:
BSC900N20NS3 G
Produttore:
Infineon Technologies
Descrizione:
Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP (Alt: BSC900N20NS3 G)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC900N20NS3 G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Alias ​​parziali
BSC900N20NS3GATMA1 BSC900N20NS3GXT SP000781780
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TDSON-8
Tecnologia
si
Numero di canali
1 Channel
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
62.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
15.2 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Rds-On-Drain-Source-Resistenza
77 mOhms
Polarità del transistor
Canale N
Transconduttanza diretta-Min
16 S 8 S
Tags
BSC90, BSC9, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
BSC900N20NS3GATMA1
DISTI # BSC900N20NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.7505
BSC900N20NS3GATMA1
DISTI # BSC900N20NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.8622
  • 500:$1.0405
  • 100:$1.3378
  • 10:$1.6650
  • 1:$1.8400
BSC900N20NS3GATMA1
DISTI # BSC900N20NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.8622
  • 500:$1.0405
  • 100:$1.3378
  • 10:$1.6650
  • 1:$1.8400
BSC900N20NS3 G
DISTI # BSC900N20NS3 G
Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP (Alt: BSC900N20NS3 G)
RoHS: Compliant
Min Qty: 5000
Asia - 0
    BSC900N20NS3GATMA1
    DISTI # BSC900N20NS3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC900N20NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.7559
    • 10000:$0.7279
    • 20000:$0.7019
    • 30000:$0.6779
    • 50000:$0.6659
    BSC900N20NS3GATMA1
    DISTI # 85X4155
    Infineon Technologies AGMOSFET, N-CH, 200V, 15.2A, 62.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:15.2A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$1.5500
    • 10:$1.3200
    • 25:$1.2300
    • 50:$1.1400
    • 100:$1.0500
    • 250:$0.9850
    • 500:$0.9190
    • 1000:$0.7610
    BSC900N20NS3 G
    DISTI # 726-BSC900N20NS3G
    Infineon Technologies AGMOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
    RoHS: Compliant
    2956
    • 1:$1.5500
    • 10:$1.3200
    • 100:$1.0500
    • 500:$0.9190
    • 1000:$0.7610
    • 2500:$0.7090
    • 5000:$0.6830
    BSC900N20NS3GATMA1
    DISTI # 9064400
    Infineon Technologies AGMOSFET N-CH200V 15.2A OPTIMOS TDSON8 EP, PK1000
    • 10:£1.0920
    • 50:£0.9610
    • 250:£0.7530
    • 500:£0.6620
    • 1250:£0.5430
    BSC900N20NS3GATMA1
    DISTI # 9064400P
    Infineon Technologies AGMOSFET N-CH200V 15.2A OPTIMOS TDSON8 EP, RL5650
    • 50:£0.9610
    • 250:£0.7530
    • 500:£0.6620
    • 1250:£0.5430
    BSC900N20NS3GATMA1
    DISTI # 2443372RL
    Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TDSON-8
    RoHS: Compliant
    0
    • 1:$2.4600
    • 10:$2.0900
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.2100
    • 2500:$1.1300
    • 5000:$1.0900
    BSC900N20NS3GATMA1
    DISTI # 2443372
    Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TDSON-8
    RoHS: Compliant
    0
    • 1:$2.4600
    • 10:$2.0900
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.2100
    • 2500:$1.1300
    • 5000:$1.0900
    BSC900N20NS3GATMA1
    DISTI # 2443372
    Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TDSON-8
    RoHS: Compliant
    0
    • 5:£1.1000
    • 25:£0.9710
    • 100:£0.8030
    • 250:£0.7610
    • 500:£0.6690
    Immagine Parte # Descrizione
    BSC900N20NS3 G

    Mfr.#: BSC900N20NS3 G

    OMO.#: OMO-BSC900N20NS3-G

    MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
    BSC900N20NS3GATMA1

    Mfr.#: BSC900N20NS3GATMA1

    OMO.#: OMO-BSC900N20NS3GATMA1

    MOSFET MV POWER MOS
    BSC900N20NS3 G

    Mfr.#: BSC900N20NS3 G

    OMO.#: OMO-BSC900N20NS3-G-1190

    Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP (Alt: BSC900N20NS3 G)
    BSC900N20NS3GATMA1

    Mfr.#: BSC900N20NS3GATMA1

    OMO.#: OMO-BSC900N20NS3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 200V 15.2A 8TDSON
    BSC900N20NS3G

    Mfr.#: BSC900N20NS3G

    OMO.#: OMO-BSC900N20NS3G-126

    IGBT Transistors MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di BSC900N20NS3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,02 USD
    1,02 USD
    10
    0,97 USD
    9,73 USD
    100
    0,92 USD
    92,21 USD
    500
    0,87 USD
    435,40 USD
    1000
    0,82 USD
    819,60 USD
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