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SIZ904DT-T1-GE3

SIZ904DT-T1-GE3
Mfr. #:
SIZ904DT-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIZ904DT-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ904DT-T1-GE3 DatasheetSIZ904DT-T1-GE3 Datasheet (P4-P6)SIZ904DT-T1-GE3 Datasheet (P7-P9)SIZ904DT-T1-GE3 Datasheet (P10-P12)SIZ904DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Maggiori informazioni:
SIZ904DT-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAIR-6x5-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
12 A, 16 A
Rds On - Resistenza Drain-Source:
24 mOhms, 13.5 mOhms
Vgs th - Tensione di soglia gate-source:
1 V, 1.2 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
12 nC, 23 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
20 W, 33 W
Configurazione:
Dual
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
TAGLIA
Tipo di transistor:
2 N-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
17 S, 24 S
Tempo di caduta:
10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
12 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
13 ns
Tempo di ritardo di accensione tipico:
15 ns
Parte # Alias:
SIZ904DT-GE3
Tags
SIZ904, SIZ90, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
SIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor; 9.5A; 14.5A; 30V; 8-Pin PowerPAIR
***et
Transistor MOSFET Array Dual N-CH 30V 12A/16A 8-Pin PowerPAIR T/R
***ure Electronics
Dual N Channel 30 V 0.024/0.0135 O 3.8/7.3 nC Power Mosfet - PowerPAIR 6 x 5
***ure Electronics
SiS412DN Series N-Channel 30 V 24 mOhms SMT Power Mosfet - PowerPAK-1212-8
***ark
Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:15.6W; No. of Pins:8Pins RoHS Compliant: No
***ment14 APAC
MOSFET, N-CH, 30V, 12A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:15.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:15.6W; Voltage Vgs Max:20V
***et
Transistor MOSFET Array Dual N-Channel 30V 9.4A/14A 6-Pin PowerPAIR
***el Electronic
MOSFET 30V 12/16A 20/30W 24/13.5mohm @ 10V
***i-Key
MOSFET 2N-CH 30V 12A PPAK 1212-8
***S
French Electronic Distributor since 1988
***enic
PowerPAIR-6x3.7-6 MOSFETs ROHS
***ment14 APAC
N CHANNEL MOSFET, 30V, 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V
***Yang
Transistor MOSFET Array Dual N-CH 30V 23A/45A 8-Pin Power 33 T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET 30V, 9.5mΩ and 20mΩ
*** Source Electronics
MOSFET 2N-CH 30V 8A/12A POWER33 / Trans MOSFET N-CH Si 30V 18A 8-Pin WDFN EP T/R
***ment14 APAC
MOSFET,NN CH,30V,18A,POWER33; Module Configuration:Dual; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:2.2W
***rchild Semiconductor
This device includes two specialized N-channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
***Yang
Transistor MOSFET Array Dual N-CH 30V 23A/46A 8-Pin Power 33 T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET 30V, 10mΩ, 20mΩ
***ark
DUAL N CH MOSFET, POWERTRENCH, 30V, 18A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8.5A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0078ohm
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, NN CH, 30V, 18A/13A, POWER33; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ical
Trans MOSFET N-CH 30V 15A 8-Pin QFN EP T/R
***peria
PSMN017-30LL - N-channel DFN3333-8 30 V 17 mΩ logic level MOSFET
***ark
MOSFET, N CH, 30V, 15A, 8-QFN3333
***el Electronic
IC PREDRIVER QUAD LOSIDE 32-LQFP
***ure Electronics
N-Channel 30 V 0.02 Ohm Power MOSFET SMT - TO-252-3
***et
Trans MOSFET N-CH 30V 18.4A 3-Pin(2+Tab) DPAK T/R
***el Electronic
ANALOG DEVICES ADM707ANZ. IC, MPU SUPERVISOR, 4.65VTH, 8DIP
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ronik
N-CH 30V 18A 20mOhm TO252-3 RoHSconf
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Parte # Mfg. Descrizione Azione Prezzo
SIZ904DT-T1-GE3
DISTI # SIZ904DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SIZ904DT-T1-GE3
    DISTI # SIZ904DT-T1-GE3DKR-ND    		Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SIZ904DT-T1-GE3
      DISTI # SIZ904DT-T1-GE3TR-ND      		Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.5205
      SIZ904DT-T1-GE3
      DISTI # SIZ904DT-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.5A/14.5A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ904DT-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
        SIZ904DT-T1-GE3
        DISTI # 70616574        		Vishay SiliconixSIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor,9.5A,14.5A,30V,8-Pin PowerPAIR
        RoHS: Compliant        		0
        • 300:$0.6600
        • 600:$0.6500
        • 1500:$0.6400
        • 3000:$0.6200
        SIZ904DT-T1-GE3
        DISTI # 78-SIZ904DT-T1-GE3        		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
        RoHS: Compliant        		0
        • 1:$1.1900
        • 10:$0.9740
        • 100:$0.7470
        • 500:$0.6430
        • 1000:$0.6080
        • 3000:$0.5640
        SIZ904DTT1GE3Vishay Intertechnologies 
        RoHS: Compliant        		Europe - 3000
          SIZ904DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5Americas -
            Immagine Parte # Descrizione
            SIZ904DT-T1-GE3

            Mfr.#: SIZ904DT-T1-GE3

            OMO.#: OMO-SIZ904DT-T1-GE3

            		 MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
            SIZ904DT

            Mfr.#: SIZ904DT

            OMO.#: OMO-SIZ904DT-1190

            		 Nuovo e originale
            SIZ904DT-T1-GE3

            Mfr.#: SIZ904DT-T1-GE3

            OMO.#: OMO-SIZ904DT-T1-GE3-VISHAY

            		 MOSFET 2N-CH 30V 12A POWERPAIR
            SIZ904DTT1GE3

            Mfr.#: SIZ904DTT1GE3

            OMO.#: OMO-SIZ904DTT1GE3-1190

            		 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
            Disponibilità
            Azione:
            Available
            Su ordine:
            1986
            Inserisci la quantità:
            Il prezzo attuale di SIZ904DT-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
            Prezzo di riferimento (USD)
            Quantità
            Prezzo unitario
            est. Prezzo
            1
            1,18 USD
            1,18 USD
            10
            0,97 USD
            9,73 USD
            100
            0,75 USD
            74,60 USD
            500
            0,64 USD
            321,00 USD
            1000
            0,51 USD
            506,00 USD
            A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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