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IPP60R280P7XKSA1

IPP60R280P7XKSA1
Mfr. #:
IPP60R280P7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET LOW POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPP60R280P7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPP60R280P7XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
12 A
Rds On - Resistenza Drain-Source:
214 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
18 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
53 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Serie:
CoolMOS P7
Tipo di transistor:
1 N-Channel
Marca:
Tecnologie Infineon
Tempo di caduta:
9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
9 ns
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
60 ns
Tempo di ritardo di accensione tipico:
17 ns
Parte # Alias:
IPP60R280P7 SP001647026
Unità di peso:
0.063493 oz
Tags
IPP60R280P, IPP60R28, IPP60R2, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 280 mOhm 18 nC CoolMOS™ Power Mosfet - TO-220-3
***i-Key
MOSFET N-CH 600V 12A TO220-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 600V, 12A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.214Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 12A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:53W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 12A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.214ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:53W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descrizione Azione Prezzo
IPP60R280P7XKSA1
DISTI # V36:1790_18204914		Infineon Technologies AG600VCoolMOS P7 Power Transistor0
    IPP60R280P7XKSA1
    DISTI # IPP60R280P7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH 600V 12A TO220-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		1000In Stock
    • 1000:$1.1992
    • 500:$1.4209
    • 100:$1.7903
    • 10:$2.1970
    • 1:$2.4200
    IPP60R280P7XKSA1
    DISTI # SP001647026    		Infineon Technologies AGLOW POWER_NEW (Alt: SP001647026)
    RoHS: Compliant
    Min Qty: 50    		Europe - 480
    • 50:€1.1179
    • 100:€0.9319
    • 200:€0.8599
    • 300:€0.7989
    • 500:€0.7449
    IPP60R280P7XKSA1
    DISTI # IPP60R280P7XKSA1    		Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPP60R280P7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 500:$0.9679
    • 1000:$0.9329
    • 2000:$0.8989
    • 3000:$0.8689
    • 5000:$0.8529
    IPP60R280P7XKSA1
    DISTI # 34AC1711    		Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.214ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes305
    • 1000:$0.9750
    • 500:$1.1700
    • 100:$1.3400
    • 10:$1.6800
    • 1:$1.9700
    IPP60R280P7XKSA1Infineon Technologies AGSingle N-Channel 600 V 280 mOhm 18 nC CoolMOS Power Mosfet - TO-220-3
    RoHS: Not Compliant    		500Tube
    • 500:$0.9800
    • 1000:$0.9300
    IPP60R280P7XKSA1
    DISTI # 726-IPP60R280P7XKSA1    		Infineon Technologies AGMOSFET LOW POWER_NEW
    RoHS: Compliant    		1910
    • 1:$1.9700
    • 10:$1.6800
    • 100:$1.3400
    • 500:$1.1700
    • 1000:$0.9750
    IPP60R280P7XKSA1
    DISTI # 2784041    		Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-220
    RoHS: Compliant    		305
    • 1000:$1.5900
    • 500:$1.6800
    • 250:$1.9400
    • 100:$2.3000
    • 10:$2.8200
    • 1:$3.2400
    IPP60R280P7XKSA1
    DISTI # 2784041    		Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-220
    RoHS: Compliant    		305
    • 500:£0.9180
    • 250:£0.9840
    • 100:£1.0500
    • 25:£1.3200
    • 5:£1.4300
    IPP60R280P7XKSA1
    DISTI # XSFP00000168972    		Infineon Technologies AGSwage Terminal Pin
    RoHS: Compliant    		1500 in Stock0 on Order
    • 1500:$1.7800
    • 500:$1.9600
    Immagine Parte # Descrizione
    OPA2171AIDGKR

    Mfr.#: OPA2171AIDGKR

    OMO.#: OMO-OPA2171AIDGKR

    		 Operational Amplifiers - Op Amps 36V,Low Pwr,RRO,Gen Purp Op Amp
    NE555P

    Mfr.#: NE555P

    OMO.#: OMO-NE555P

    		 Timers & Support Products Precision
    NE556N

    Mfr.#: NE556N

    OMO.#: OMO-NE556N

    		 Timers & Support Products Dual Precision
    LM5069MMX-1/NOPB

    Mfr.#: LM5069MMX-1/NOPB

    OMO.#: OMO-LM5069MMX-1-NOPB

    		 Hot Swap Voltage Controllers Positive High Voltage Hot Swap / Inrush
    CSD19503KCS

    Mfr.#: CSD19503KCS

    OMO.#: OMO-CSD19503KCS

    		 MOSFET 80V 7.6mOhm N-CH Pwr MOSFET
    LM5155DSSR

    Mfr.#: LM5155DSSR

    OMO.#: OMO-LM5155DSSR

    		 Switching Controllers WIDE VIN NON-SYNC BOOST CONTROLLER
    OPA2171AIDGKR

    Mfr.#: OPA2171AIDGKR

    OMO.#: OMO-OPA2171AIDGKR-TEXAS-INSTRUMENTS

    		 Operational Amplifiers - Op Amps 36V,Low Pwr,RRO,Gen Purp Op Amp
    LM5069MMX-1/NOPB

    Mfr.#: LM5069MMX-1/NOPB

    OMO.#: OMO-LM5069MMX-1-NOPB-TEXAS-INSTRUMENTS

    		 Hot Swap Voltage Controllers Positive High Voltage Hot Swap / Inrush
    CSD19503KCS

    Mfr.#: CSD19503KCS

    OMO.#: OMO-CSD19503KCS-TEXAS-INSTRUMENTS

    		 MOSFET N-CH 80V 94A TO220-3
    NE556N

    Mfr.#: NE556N

    OMO.#: OMO-NE556N-TEXAS-INSTRUMENTS

    		 IC OSC TIMER DUAL 500KHZ 14DIP
    Disponibilità
    Azione:
    Available
    Su ordine:
    1984
    Inserisci la quantità:
    Il prezzo attuale di IPP60R280P7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,97 USD
    1,97 USD
    10
    1,68 USD
    16,80 USD
    100
    1,34 USD
    134,00 USD
    500
    1,17 USD
    585,00 USD
    1000
    0,98 USD
    975,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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