BSC091N03MSCG

BSC091N03MSCG
Mfr. #:
BSC091N03MSCG
Produttore:
Rochester Electronics, LLC
Descrizione:
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC091N03MSCG Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INTERSIL
categoria di prodotto
Chip IC
Tags
BSC091N03MSCG, BSC091N03MSC, BSC091N, BSC091, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
BSC091N03MSC G
DISTI # 726-BSC091N03MSCG
Infineon Technologies AGMOSFET N-Ch 30V 12A TDSON-8
RoHS: Compliant
0
    BSC091N03MSCGInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Not Compliant
    15000
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    BSC091N03MSCGATMA1Infineon Technologies AGPower Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    35000
    • 1000:$0.2500
    • 500:$0.2600
    • 100:$0.2700
    • 25:$0.2900
    • 1:$0.3100
    Immagine Parte # Descrizione
    BSC0911NDATMA1

    Mfr.#: BSC0911NDATMA1

    OMO.#: OMO-BSC0911NDATMA1

    MOSFET N-Ch 25V 40A TISON-8
    BSC0910NDI

    Mfr.#: BSC0910NDI

    OMO.#: OMO-BSC0910NDI

    MOSFET TRANSITIONAL MOSFETS
    BSC0910NDIATMA1

    Mfr.#: BSC0910NDIATMA1

    OMO.#: OMO-BSC0910NDIATMA1

    MOSFET LV POWER MOS
    BSC0910NDI

    Mfr.#: BSC0910NDI

    OMO.#: OMO-BSC0910NDI-1190

    Trans MOSFET N-CH 25V 11A/22A 8-Pin TISON T/R (Alt: BSC0910NDI)
    BSC0911ND

    Mfr.#: BSC0911ND

    OMO.#: OMO-BSC0911ND-1190

    Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON T/R (Alt: BSC0911ND)
    BSC091N03MS

    Mfr.#: BSC091N03MS

    OMO.#: OMO-BSC091N03MS-1190

    Nuovo e originale
    BSC091N03MSC G

    Mfr.#: BSC091N03MSC G

    OMO.#: OMO-BSC091N03MSC-G-1190

    MOSFET N-Ch 30V 12A TDSON-8
    BSC091N03MSCG

    Mfr.#: BSC091N03MSCG

    OMO.#: OMO-BSC091N03MSCG-1190

    Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC091N03MSCGATMA1

    Mfr.#: BSC091N03MSCGATMA1

    OMO.#: OMO-BSC091N03MSCGATMA1-1190

    Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC0910NDIATMA1

    Mfr.#: BSC0910NDIATMA1

    OMO.#: OMO-BSC0910NDIATMA1-INFINEON-TECHNOLOGIES

    MOSFET LV POWER MOS
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di BSC091N03MSCG è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,36 USD
    0,36 USD
    10
    0,34 USD
    3,42 USD
    100
    0,32 USD
    32,40 USD
    500
    0,31 USD
    153,00 USD
    1000
    0,29 USD
    288,00 USD
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